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Rochester Electronics LLC HUF76107D3S N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HUF76107D3S	Bulk			701	1 - 10 - 100 - 1000 $0.43 10000 $0.43	Buy Now
Rochester Electronics LLC HUF76107D3ST N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HUF76107D3ST	Bulk			919	1 - 10 - 100 - 1000 $0.33 10000 $0.33	Buy Now
Fairchild Semiconductor Corporation HUF76107D3ST
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	HUF76107D3ST		1,372			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	HUF76107D3ST		4,730		1	1 $0.3142 10 $0.3142 100 $0.2953 1000 $0.2671 10000 $0.2671	Buy Now
Fairchild Semiconductor Corporation HUF76107D3S 20A, 30V, 0.08ohm, N-Channel Power MOSFET, TO-252AA '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HUF76107D3S		1,050		1	1 $0.4117 10 $0.4117 100 $0.387 1000 $0.3499 10000 $0.3499	Buy Now
HARTING Technology Group HUF76107D3ST 20A, 30V, 0.052 OHM, N-CHANNEL, LOGIC LEVEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 20A I(D), 30V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	HUF76107D3ST		1,425			1 - 10 - 100 - 1000 - 10000 -	Get Quote

76107D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MOSFET 76107D Abstract: 76107d TC298 Text: 76107D3, 76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	HUF76107D3, HUF76107D3S MOSFET 76107D 76107d TC298	PDF
76107d Abstract: MOSFET 76107D TA76107 ta7610 HUF76107D3S HUF76107D3ST TB334 HUF76107D3 AN7254 AN9321 Text: 76107D3, 76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	HUF76107D3, HUF76107D3S 76107d MOSFET 76107D TA76107 ta7610 HUF76107D3S HUF76107D3ST TB334 HUF76107D3 AN7254 AN9321	PDF
76107d Abstract: MOSFET 76107D AN7254 AN9321 AN9322 HUF76107D3 HUF76107D3S HUF76107D3ST TB334 TC298 Text: 76107D3, 76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	HUF76107D3, HUF76107D3S 2003opment. 76107d MOSFET 76107D AN7254 AN9321 AN9322 HUF76107D3 HUF76107D3S HUF76107D3ST TB334 TC298	PDF
Untitled Abstract: No abstract text available Text: 76107D3, 76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title HUF76 107D3, HUF76 107D3 S /Subject (20A, 30V, 0.052 Ohm, NChannel, Logic Level UltraF ET Power MOSFETs) /Autho r () /Keywords (Intersil Corporation,	Original	HUF76107D3, HUF76107D3S HUF76 107D3, 107D3	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF
76107d Abstract: HUF76107D3S MOSFET 76107D AN7254 AN9321 AN9322 HUF76107D3 HUF76107D3ST TB334 TC298 Text: 76107D3, 76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	HUF76107D3, HUF76107D3S 200opment. 76107d HUF76107D3S MOSFET 76107D AN7254 AN9321 AN9322 HUF76107D3 HUF76107D3ST TB334 TC298	PDF
76107d Abstract: TA76107 F76107D3S F7610 dlis Text: in te r r ii 76107D3, 76107D3S Data S heet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Th ese N -Channel power u m t$ ' M O S F E T s are m anufactured using J u ly 1999 F ile N u m b e r 4701.1 Features • Logic Level G ate Drive	OCR Scan	HUF76107D3, HUF76107D3S HUF76107D3S AN7260. 76107d TA76107 F76107D3S F7610 dlis	PDF
76107d Abstract: TC298 Text: 76107D3, 76107D3S Semiconductor Data Sheet 20A, 30 V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	HUF76107D3, HUF76107D3S HUF76107 76107d TC298	PDF
76107d Abstract: TC298 Text: ASSESS? HUF76107P3, 76107D3, 76107D3S 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs June 1998 Description Features m • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology	OCR Scan	HUF76107P3, HUF76107D3, HUF76107D3S TB334, HUF76107D3S T0-252AA 330mm EIA-481 76107d TC298	PDF