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    SGD02N60 Price and Stock

    Rochester Electronics LLC SGD02N60BUMA1

    IGBT NPT 600V 6A TO252-3
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    DigiKey SGD02N60BUMA1 Bulk 7,002 465
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    • 1000 $0.65
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    Infineon Technologies AG SGD02N60BUMA1

    IGBT NPT 600V 6A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SGD02N60BUMA1 Reel
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    Avnet Americas SGD02N60BUMA1 Reel 4 Weeks 559
    • 1 $0.6523
    • 10 $0.6523
    • 100 $0.584
    • 1000 $0.5281
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    Rochester Electronics SGD02N60BUMA1 7,002 1
    • 1 $0.6523
    • 10 $0.6523
    • 100 $0.6132
    • 1000 $0.5545
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    SGD02N60 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SGD02N60 Infineon Technologies 2A 600V TO 252AA IGBT Original PDF
    SGD02N60 Infineon Technologies Fast IGBT in NPT-Technology Original PDF
    SGD02N60 Siemens Original PDF
    SGD02N60 Siemens IGBT Original PDF
    SGD02N60BUMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 6A 30W TO252-3 Original PDF

    SGD02N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SGU02N60

    Abstract: ic 0941 SGB02N60 P-TO252 SGD02N60 SGP02N60
    Text: SGP02N60, SGB02N60 SGD02N60, SGU02N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    PDF SGP02N60, SGB02N60 SGD02N60, SGU02N60 O-220AB Q67041-A4707-A2 O-263AB Q67041-A4707-A4 SGD02N60 SGU02N60 ic 0941 SGB02N60 P-TO252 SGD02N60 SGP02N60

    g10n60

    Abstract: No abstract text available
    Text: SGP02N60 SGD02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    PDF SGP02N60 SGD02N60 PG-TO-252-3-1 PG-TO-220-3-1 O-252AA) O-220AB) SGD02N60 g10n60

    SGP02N60

    Abstract: SGU02N60 SGB02N60 SGD02N60 BUP410D
    Text: Preliminary data SGP02N60, SGB02N60, SGD02N60, SGU02N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:


    Original
    PDF SGP02N60, SGB02N60, SGD02N60, SGU02N60 SGP02N60 O-220AB Q67041-A4707-A2 SGB02N60 O-263AB Q67041-A4707-A4 SGP02N60 SGU02N60 SGB02N60 SGD02N60 BUP410D

    g10n60

    Abstract: No abstract text available
    Text: SGP02N60 SGD02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    PDF SGP02N60 SGD02N60 PG-TO-252-3-1 PG-TO-220-3-1 O-252AA) O-220AB) SGD02N60 g10n60

    g10n60

    Abstract: No abstract text available
    Text: SGP02N60 SGD02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    PDF SGP02N60 SGD02N60 PG-TO-252-3-1 PG-TO-220-3-1 O-252AA) O-220AB) SGD02N60 g10n60

    ic 0941

    Abstract: P-TO252 Q67040-S4504 Q67040-S4505 Q67041-A4707 SGB02N60 SGD02N60 SGP02N60 S*02N60
    Text: SGP02N60, SGB02N60 SGD02N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    PDF SGP02N60, SGB02N60 SGD02N60 P-TO-252-3-1 O-252AA) P-TO-220-3-1 O-220AB) P-TO-263-3-2 O-263AB) O-220AB ic 0941 P-TO252 Q67040-S4504 Q67040-S4505 Q67041-A4707 SGB02N60 SGD02N60 SGP02N60 S*02N60

    g10n60

    Abstract: SGP02N60 pspice high frequency igbt SGD02N60 PG-TO-220-3-1 PG-TO252-3-11
    Text: SGP02N60 SGD02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    PDF SGP02N60 SGD02N60 PG-TO-252-3-1 PG-TO-220-3-1 O-252AA) O-220AB) G10N60 g10n60 SGP02N60 pspice high frequency igbt SGD02N60 PG-TO-220-3-1 PG-TO252-3-11

    BUP410D

    Abstract: P-TO252 SGD02N60
    Text: SGD02N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGD02N60 600V 2A P-TO252 Q67040-A . . . . Maximum Ratings


    Original
    PDF SGD02N60 P-TO252 Q67040-A BUP410D Apr-07-1998 BUP410D P-TO252 SGD02N60

    S*02N60

    Abstract: No abstract text available
    Text: SGP02N60, SGB02N60 SGD02N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original
    PDF SGP02N60, SGB02N60 SGD02N60 SGP02N60 SGD02N60 O-220AB O-263AB O-252AA Q67040-S4504 S*02N60

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original
    PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original
    PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original
    PDF B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635

    igbt dimmer

    Abstract: SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60
    Text: P R O D U C T B R I E F Fast & H i g h S p e e d I G BT for Industrial and Consumer Applications As Single IGBT version or DuoPackTM with very soft, fast recovery anti-parallel EmConTM Diode IGBT & DuoPack TM Applications Benefits • Motor Drives ■ Easy paralleling


    Original
    PDF B152-H7942-X-X-7600 igbt dimmer SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original
    PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D

    SGH80N60RUFD

    Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
    Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)


    Original
    PDF SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGP06N60 SKB10N60 BUP400D SGB15N60 SGH80N60RUFD bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data SIEMENS SGP02N60, SGB02N60, SGD02N60, SGU02N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:


    OCR Scan
    PDF SGP02N60, SGB02N60, SGD02N60, SGU02N60 SGP02N60 O-220AB Q67041-A4707-A2 SGB02N60 O-263AB Q67041-A4707-A4

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SGD02N60 Prelim inary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type Vce SGD02N60 600V 2A Package Ordering Code P-T0252 Q67040-A . . . . Maximum Ratings Collector-emitter voltage


    OCR Scan
    PDF SGD02N60 SGD02N60 P-T0252 Q67040-A Apr-07-= BUP41OD Apr-07-1998 GPT09051

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan
    PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S