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    HGTP10N40E1 Price and Stock

    Rochester Electronics LLC HGTP10N40E1

    10A, 400V, N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTP10N40E1 Bulk 267
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.18
    • 10000 $1.18
    		Buy Now

    Harris Semiconductor HGTP10N40E1

    10A, 400V, N-Channel IGBT '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTP10N40E1 267 1
    • 1 $1.13
    • 10 $1.13
    • 100 $1.06
    • 1000 $0.9605
    • 10000 $0.9605
    		Buy Now

    Harris Semiconductor HGTP10N40E1D

    17.5A, 400V, N-Channel IGBT '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTP10N40E1D 162 1
    • 1 $1.52
    • 10 $1.52
    • 100 $1.43
    • 1000 $1.29
    • 10000 $1.29
    		Buy Now

    HGTP10N40E1 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGTP10N40E1 Harris Semiconductor 10A, 12A, 400V and 500V N-Channel IGBTs Original PDF
    HGTP10N40E1 Intersil 10A, 12A, 400V and 500V N-Channel IGBTs Original PDF
    HGTP10N40E1D Harris Semiconductor 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Original PDF
    HGTP10N40E1D Intersil 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Original PDF

    HGTP10N40E1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10n50c1d

    Abstract: 10N50E1D 10n40c HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D 10N50C1 10n50c 50C1D
    Text: HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D S E M I C O N D U C T O R 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • VCE ON : 2.5V Max. EMITTER COLLECTOR


    Original     		PDF HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D O-220AB HGTP10N50E1D 150oC 10n50c1d 10N50E1D 10n40c HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D 10N50C1 10n50c 50C1D

    10n50c1d

    Abstract: 10N50E1D 10n40c 10N40E 10n50c 10N50C1 10n40 diode 10a 400v 10N40C1 10N50E1
    Text: HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • VCE ON : 2.5V Max. EMITTER COLLECTOR GATE • TFALL: 1µs, 0.5µs


    Original     		PDF HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D O-220AB HGTP10N50E1D 10n50c1d 10N50E1D 10n40c 10N40E 10n50c 10N50C1 10n40 diode 10a 400v 10N40C1 10N50E1

    g10n50c1

    Abstract: G10N50E1 HGTP10N40E1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N50C1
    Text: HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 S E M I C O N D U C T O R 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE ON : 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs


    Original     		PDF HGTP10N40C1, HGTH12N40C1, O-218AC O-220AB HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40E1, g10n50c1 G10N50E1 HGTP10N40E1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N50C1

    g10n50c1

    Abstract: G10N50E1 ge 40e1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N40E1
    Text: HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE ON : 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs GATE COLLECTOR


    Original     		PDF HGTP10N40C1, HGTH12N40C1, O-218AC O-220AB HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40E1, g10n50c1 G10N50E1 ge 40e1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N40E1

    10N40E

    Abstract: 10n40e1d HGTP10N40E1D HGTP10N40C1D HGTP10N50C1D HGTP10N50E1D ls25 diode diode OA-75
    Text: bSE HARRIS SEtllCOND SECTOR H A R R I S S E M I C O N D U C T O R 1> Bfl M 3G 22 71 005D2b4 850 H H A S HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features


    OCR Scan     		PDF M3D2271 00502L HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D HGTP10N40E1D, HGTP10N50E1D 10N40E 10n40e1d HGTP10N40C1D HGTP10N50C1D ls25 diode diode OA-75

    10n50c1d

    Abstract: 10N50E1D 10N40E ultrafast diode 10a 300v 50E1D 10N50E1 400v 5A 1Y 10N40C1
    Text: m l-L A J R F R IS tip s E M , c o N D u c T o R HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Features Package • 10A, 400V and 500V JEDEC TO-22QAB • ^CE ON ' 2.5V Max.


    OCR Scan     		PDF HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D O-22QAB HGTP10N50E1D AN7254 10n50c1d 10N50E1D 10N40E ultrafast diode 10a 300v 50E1D 10N50E1 400v 5A 1Y 10N40C1

    Diode LT 443

    Abstract: diode lt 823 948 LG DIODE gep 45 diode 100A-4V HGTP10N40C1D
    Text: rjn HARRIS VMJ s e m i c o n d u c t o r HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features JE D E C TD-220AB • 10 Amp, 400 and 500 Volt T O P VIEW • V c e o n 2.5V Max.


    OCR Scan     		PDF HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D TD-220AB TP10N AN7254 AN7260) Diode LT 443 diode lt 823 948 LG DIODE gep 45 diode 100A-4V HGTP10N40C1D

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEtlICOND SECTOR Ì l ì H A R R IS VM J s e m .c o n d u c t o r bflE » Bi M3GE271 OGSOEbM 660 * H A S HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package


    OCR Scan     		PDF M3GE271 HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D O-220AB AN72S4 AN7260)

    HGTH20N40E1D

    Abstract: TO218AC HGTG20N50 TO-220AB 5-lead IGBT Guide
    Text: HARRIS IGBT PRODUCT LINE Selection Guide IGBTs CO HARRIS IGBT PRODUCT LINE Continued 1. Icm = maximum continuous current rating at Tc = +90°C. 2. ICM = maximum pulsed current rating. 3. tp measured at Tc = +150°C. Selection Guide SHADING Indicates DEVELOPMENTAL PRODUCTS


    OCR Scan     		PDF O-220AB HGTP6N40E1D HGTP10N40F1D HGTP10N40E1D HGTP10N40C1D HGTH12N40E1D HGTH12N40C1D HGTH20N40E1D HGTH20N40C1D HGTP6N50E1D TO218AC HGTG20N50 TO-220AB 5-lead IGBT Guide

    12N50E

    Abstract: 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40
    Text: r r I i- i a c a m e ; <Ü h g t p i 0N40C1, 40E1, s o c i , 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 o? 10A, 12A, 400V and 500V N-Channel IGBTs A p ril 1 9 9 5 Features Packages H G TH -TY P E S JE D E C TO -218A C • 10A and 12A, 400V and 500V • ^CE ON ’ 2.5V Max.


    OCR Scan     		PDF 0N40C1, HGTH12N40C1, -218A -220A HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, 12N50E 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
    Text: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .


    OCR Scan     		PDF HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, HGTH12N40C1, HGTP10N40C1D, HGTP10N40E1D, TRANSISTOR BIPOLAR 400V 20A igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT

    kc 637

    Abstract: No abstract text available
    Text: HARRIS SEÎIICOND SECTOR m U U HARRIS S E M I C O N D U C T O R bßE » • M3D2271 D O S D n S HGTH12N40C1, 40E1, 50C1, 50E1 HGTM12N40C1, 40E1, 50C1, 50E1 HGTP10N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs December 1993 Packages Features


    OCR Scan     		PDF M3D2271 HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, O-218AC M302271 HGTH12N40C1 HGmi2N40C1 HGTP10N40C1 kc 637

    hgtm

    Abstract: HGTM12N40E1
    Text: HGTH12N40C1, 40E1, 50C1, 50E1 HGTM12N40C1, 40E1, 50C1, 50E1 HGTP10N40C1, 40E1, 50C1, 50E1 HARIRIS SEMICONDUCTOR 10A, 12A, 400V and 500V N-Channel IGBTs December 1993 Packages Features HGTH-TYPES JEDEC TO-21BAC TOP VIEW • 10A and 12A, 400V and 500V • V CE ON


    OCR Scan     		PDF HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, O-21BAC T0-220A O-204AA HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, hgtm HGTM12N40E1

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40