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Rochester Electronics LLC MTB10N40E N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MTB10N40E	Bulk			182	1 - 10 - 100 - 1000 $1.65 10000 $1.65	Buy Now
Rochester Electronics LLC HGTP10N40E1 10A, 400V, N-CHANNEL IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTP10N40E1	Bulk			267	1 - 10 - 100 - 1000 $1.18 10000 $1.18	Buy Now
Rochester Electronics LLC MTB10N40ET4 N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MTB10N40ET4	Bulk			346	1 - 10 - 100 - 1000 $0.87 10000 $0.87	Buy Now
Rochester Electronics LLC HGTP10N40EID 17.5A, 400V, N-CHANNEL IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTP10N40EID	Bulk			225	1 - 10 - 100 - 1000 $1.58 10000 $1.58	Buy Now
onsemi MTB10N40ET4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MTB10N40ET4		32,646			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	MTB10N40ET4		2,890		1	1 $0.8342 10 $0.8342 100 $0.7841 1000 $0.7091 10000 $0.7091	Buy Now

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10N40E Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
10N40E1		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF
10N40E1D		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

10N40E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
10n50c1d Abstract: 10N50E1D 10n40c HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D 10N50C1 10n50c 50C1D Text: HGTP10N40C1D, 10N40E1D, HGTP10N50C1D, HGTP10N50E1D S E M I C O N D U C T O R 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • VCE ON : 2.5V Max. EMITTER COLLECTOR	Original	PDF	HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D O-220AB HGTP10N50E1D 150oC 10n50c1d 10N50E1D 10n40c HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D 10N50C1 10n50c 50C1D
10n50c1d Abstract: 10N50E1D 10n40c 10N40E 10n50c 10N50C1 10n40 diode 10a 400v 10N40C1 10N50E1 Text: HGTP10N40C1D, 10N40E1D, HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • VCE ON : 2.5V Max. EMITTER COLLECTOR GATE • TFALL: 1µs, 0.5µs	Original	PDF	HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D O-220AB HGTP10N50E1D 10n50c1d 10N50E1D 10n40c 10N40E 10n50c 10N50C1 10n40 diode 10a 400v 10N40C1 10N50E1
6N60E Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E Text: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218	OCR Scan	PDF	O-247 O-218 340F-03 340B-03 O-247 6N100E 10N100E 6N60E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 16N40E
MTP8P20 Abstract: MTP10N10M MTP8N18 MTP7N18 MTP7N20 MTP7P05 MTP7P06 MTP8N08 MTP8N10 MTP8N12 Text: M € f Ä * Vds or Vd g tí: « A V * £ fê (Ta=25^C) Vg s (V) Id Po * /CH * /CH Ig s s m (A) % S V g s (th) Id s s (nA) Vg s (V) Vd s (V) <UA) Id (nA) (V) (V) fê ÎDs(on) V:r>s= Vg s max min ft '14 CTa=25cC ) ÌD(on) Ciss g fs Coss ft Crss V g s =0 (max)	OCR Scan	PDF	MTP7N18 T0-220AB MTP7N20 O-220AB MTP7P05 MTP7P06 MTP10NI5 MTP8P20 MTP10N10M MTP8N18 MTP8N08 MTP8N10 MTP8N12
12N50E Abstract: 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40 Text: r r I i- i a c a m e ; <Ü h g t p i 0N40C1, 40E1, s o c i , 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 o? 10A, 12A, 400V and 500V N-Channel IGBTs A p ril 1 9 9 5 Features Packages H G TH -TY P E S JE D E C TO -218A C • 10A and 12A, 400V and 500V • ^CE ON ’ 2.5V Max.	OCR Scan	PDF	0N40C1, HGTH12N40C1, -218A -220A HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, 12N50E 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40
MTM13N50E Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”	OCR Scan	PDF	BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
10n50c1d Abstract: 10N50E1D 10N40E ultrafast diode 10a 300v 50E1D 10N50E1 400v 5A 1Y 10N40C1 Text: m l-L A J R F R IS tip s E M , c o N D u c T o R HGTP10N40C1D, 10N40E1D, HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Features Package • 10A, 400V and 500V JEDEC TO-22QAB • ^CE ON ' 2.5V Max.	OCR Scan	PDF	HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D O-22QAB HGTP10N50E1D AN7254 10n50c1d 10N50E1D 10N40E ultrafast diode 10a 300v 50E1D 10N50E1 400v 5A 1Y 10N40C1
10n40e Abstract: 10N40 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 10N40E TM O S E -F E T ™ Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon CSate The D2PAK package has the capability of housing a larger die	OCR Scan	PDF	MTB10N40E 10n40e 10N40