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American Electrical Inc A1545.N1000.22 CABLE GLAND 17-22MM 1" NPT
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DigiKey	A1545.N1000.22	Bag	66		1	1 $6.2 10 $6.2 100 $4.1175 1000 $3.475 10000 $3.475	Buy Now
IXYS Corporation IXSH45N100 IGBT 1000V 75A 300W TO247
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KORATECH 001B0045N100L0011J 45N100mm1.25PP7 Koraflex FFC*
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DigiKey	001B0045N100L0011J	Ammo Pack			1	1 $20 10 $18 100 $10 1000 $2.9 10000 $2.9	Buy Now
KORATECH 001B0045N100L0010J 45N100mm1.0PP6 Koraflex FFC*
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DigiKey	001B0045N100L0010J	Ammo Pack			1	1 $20 10 $18 100 $10 1000 $2.9 10000 $2.9	Buy Now
KORATECH 001B0045N100L0009J 45N100mm1.0PP7 Koraflex FFC*
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DigiKey	001B0045N100L0009J	Ammo Pack			1	1 $20 10 $18 100 $10 1000 $2.9 10000 $2.9	Buy Now

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45N100 Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
45N1000-18	Saronix	Miniature Quartz Crystal	Original	PDF
45N1000-32	Saronix	Miniature Quartz Crystal	Original	PDF
45N100-32	Saronix	Miniature Quartz Crystal	Original	PDF

45N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
igbt 500V 45A Abstract: 45N100 ixsh45n100 Text: Low VCE sat IGBT IXSH 45N100 IXSM 45N100 VCES IC25 VCE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM	Original	45N100 O-247 O-204 igbt 500V 45A 45N100 ixsh45n100	PDF
45N100 Abstract: ixsh45n100 Text: Low VCE sat IGBT IXSH/IXSM 45N100 VCES IC25 VCE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM	Original	45N100 O-247 O-204 O-204AE 45N100 ixsh45n100	PDF
Untitled Abstract: No abstract text available Text: Low VCE sat IGBT IXSH 45N100 IXSM 45N100 VCES IC25 VCE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM	Original	45N100 45N100 O-247 O-204	PDF
Untitled Abstract: No abstract text available Text: Low VCE sat IGBT IXSH 45N100 IXSM 45N100 VCES IC25 VCE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM	Original	45N100 O-247 O-204	PDF
B1109 Abstract: b1105 B1115 80n60a 80N60B IXSN80N60A B1-76 15N120B B180 Text: SCSOA IGBT S-Series Contents IGBT High Speed Low VCE sat VCES max IC VCE(sat) max PLUS247 TO-204 (IXSX) (IXSM) TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page TC = 25 °C TC = 25 °C V A V 600 48 2.2 IXSH 24N60 1000 75 2.7 IXSH 45N100 1200	Original	PLUS247 O-204 O-247 O-264 O-268 80N60B 35N100A 15N120B 25N120A B1109 b1105 B1115 80n60a IXSN80N60A B1-76 B180	PDF
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80	PDF
45N60 Abstract: saronix 45n240 45N160 Saronix 45N120 45n20 45N073-20 45N120 45N071 45n600 Text: SaRonix Miniature Quartz Crystal UM-1 HC-45/U Technical Data UM-1 Series Frequency Range: 6 MHz to 200 MHz Temperature Range: Operating: Storage: -20°C to +70°C (extended temperature range available) -55°C to +125°C Temperature Stability Tolerance: ±50 ppm from -20°C to +70°C	Original	HC-45/U) 45N065 45N070 45N071 45N073 45N080 45N098 45N100 45N107 45N110 45N60 saronix 45n240 45N160 Saronix 45N120 45n20 45N073-20 45N120 45N071 45n600	PDF
40n60 igbt Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263	Original	O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60	PDF
30n60 Abstract: G 40N60 igbt Insulated Gate Bipolar Transistors igbt 30N60 40n60 igbt 40n60 25N100 45N10 Text: Insulated Gate Bipolar Transistors IGBT Insulated Gate Bipolar Transistors (IGBT) "S" series with improved SCSOA capability T ft* w ^0 *c Te . w c max. • ■ ■ ■ I »M m P ggM S i Billi IXSH IXSH IXSH IXSH IXSH IXSH 20N60 30N60 40N60 25N100 45N100	OCR Scan	20N60 30N60 40N60 25N100 45N100 45N120 O-247 G 40N60 igbt Insulated Gate Bipolar Transistors igbt 30N60 40n60 igbt 45N10	PDF
Untitled Abstract: No abstract text available Text: IXSH 45N100 L O W V CE sa, I G B T VCES v I C25 CE(sat) 1000 V 75 A 2.7 V V "C E S Tj =25°C to 150°C 1000 V v CGR T j = 25° C to 150° C; RGE = 1 MQ 1000 V v 6ES vGEM Continuous ±20 V Transient ±30 V 'c 2 5 Tc =25°C 75 A 'c 9 0 Tc =90°C 45 A ' cm T c = 25° C, 1 ms	OCR Scan	45N100 O-247	PDF
30n60 Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1 Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100	OCR Scan	00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1	PDF
Untitled Abstract: No abstract text available Text: nixYS Lo» IXSH/IXSM 45N100 IÛ B T VCES I = 1000 V = 75 A = 2.7 V C25 v CE sat Short Circuit SOA Capability Symbol Test Conditions v CES ^ = 25°C to 150°C 1000 V V CGR ^ = 25°C to 150°C; RGE = 1 Mi2 1000 V vy g e s Continuous +20 V VGEM T ransient ±30	OCR Scan	45N100 O-247	PDF
40N60A Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A Text: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A	OCR Scan	2N100 30N60 40N60 25N100 45N100 45N120 2N100A 10N60A 24N60A 30N6QA 40N60A G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A	PDF
ASN100 Abstract: IXSH45N100 bv 1500 sts Text: Low VCE sat IGBT IXSH/IXSM 45N100 V CES ^C25 v CE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES ^ Vco„ Td = 25°C to 150°C; RGE = 1 Mi2 = 25°C to 150°C V0ES VGEM ^C25 1000 V 1000 V Continuous ±20	OCR Scan	45N100 O-247 O-204 ASN100 IXSH45N100 bv 1500 sts	PDF

40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI	PDF
Untitled Abstract: No abstract text available Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62	OCR Scan	20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â	PDF
85C0 Abstract: IXSN35N100U1 SO 042 Text: Insulated Gate Bipolar Transistors IGBT "S" series with improved SCSOA capability Type V v CE(aat} c te8 max. typ- typ- ^auc max. PF Outlines on page 33 C = Collector, E Emitter, G = Gate, KE = Kelvin Emitter US K/W W 10 0.83 0.62 0.42 155 45 50 90 US 0.4	OCR Scan	20N60® 30N60 40N60 25N100 45N100 N100U1 OT-227B 85C0 IXSN35N100U1 SO 042	PDF
BTS 3900 a Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1 Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device	OCR Scan	T-227B BTS 3900 a BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1	PDF
8n80 Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1	OCR Scan	CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B	PDF
mm036 Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100 Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA	OCR Scan	DSAI35-12A 5-16A 5-18A 5-12A 2-06A 12-1OA 2-12A 2x30-Q4C mm036 ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100	PDF
KONY Abstract: KONY crystal HC 7404 kony 8.000000 quartz meiden 7400 hc N480 KON037 KONY crystal 24.576 hc 7400 Text: H C -4 9 /u HC-49/ U MEIDEN QUARTZ CRYSTAL UNITS Resistance Weld # Features and Applications A variety of standard frequencies are available. This version is suitable for CTVs, VTRs. # Standard Specifications Dimensions 1. Holder type . HC-49/u	OCR Scan	HC-49/ HC-49/u 800MHz 000MHz 50ppm KONY KONY crystal HC 7404 kony 8.000000 quartz meiden 7400 hc N480 KON037 KONY crystal 24.576 hc 7400	PDF
DSE 130 -06A Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50 Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01	OCR Scan	AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50	PDF
b14 smd diode Abstract: B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60 Text: XYS SCSOAIGBT S-Serles / D-Sertee Contents IGBT v C ES max T0-220 V* CEIsatl IXGP max Tc = 25 °C Tc = 25 “C •c TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 miniBLOC Page ♦ * V A V 600 16 16 1.8 1.8 48 50 75 2.2 2.5 2.5 IXSH 24N60 iXSH 30N60 IXSH 40N60	OCR Scan	T0-220 O-263 O-247 O-247 T0-204 24N60 30N60 40N60 25N100 45N100 b14 smd diode B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60	PDF

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45N100 Search Results

45N100 Price and Stock

American Electrical Inc A1545.N1000.22

IXYS Corporation IXSH45N100

KORATECH 001B0045N100L0011J

KORATECH 001B0045N100L0010J

KORATECH 001B0045N100L0009J

45N100 Datasheets (3)

45N100 Datasheets Context Search

igbt 500V 45A

45N100

Untitled

Untitled

B1109

7n60b

45N60

40n60 igbt

30n60

Untitled

30n60

Untitled

40N60A

ASN100

40n80

Untitled

85C0

BTS 3900 a

8n80

mm036

KONY

DSE 130 -06A

b14 smd diode