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Infineon Technologies AG IGW30N60TPXKSA1 IGBT TRENCH/FS 600V 53A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IGW30N60TPXKSA1	Tube	4,340		1	1 $2.66 10 $2.66 100 $1.44167 1000 $1.05237 10000 $1.05237	Buy Now
RS	IGW30N60TPXKSA1	Bulk		2 Weeks	1	1 $2.29 10 $2.02 100 $1.83 1000 $1.72 10000 $1.72	Get Quote
EBV Elektronik	IGW30N60TPXKSA1			20 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SIHF30N60E-GE3 MOSFET N-CH 600V 29A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHF30N60E-GE3	Tube	2,975		1	1 $6.78 10 $4.567 100 $6.78 1000 $2.75 10000 $2.75	Buy Now
Bristol Electronics	SIHF30N60E-GE3		350			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IGB30N60TATMA1 IGBT TRENCH 600V 60A TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IGB30N60TATMA1	Cut Tape	1,960		1	1 $3.54 10 $2.31 100 $3.54 1000 $1.31388 10000 $1.31388	Buy Now
	IGB30N60TATMA1	Digi-Reel	1,960		1	1 $3.54 10 $2.31 100 $3.54 1000 $1.31388 10000 $1.31388	Buy Now
	IGB30N60TATMA1	Reel	1,000		1,000	1 - 10 - 100 - 1000 $1.21806 10000 $1.1465	Buy Now
EBV Elektronik	IGB30N60TATMA1			20 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bourns Inc BIDW30N60T IGBT TRENCH FS 600V 60A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BIDW30N60T	Tube	1,885		1	1 $3.52 10 $3.52 100 $2.10233 1000 $3.52 10000 $3.52	Buy Now
Avnet Americas	BIDW30N60T	Tube	600	16 Weeks	210	1 - 10 - 100 - 1000 - 10000 $2.108	Buy Now
Mouser Electronics	BIDW30N60T		3,905			1 $3.52 10 $3.52 100 $1.94 1000 $1.93 10000 $1.93	Buy Now
Newark	BIDW30N60T	Bulk	2,974		1	1 $4.72 10 $4.67 100 $3.34 1000 $3.02 10000 $3.02	Buy Now
TTI	BIDW30N60T	Tube			3,000	1 - 10 - 100 - 1000 - 10000 $1.94	Buy Now

Avnet Abacus	BIDW30N60T			19 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	BIDW30N60T					1 - 10 $5.51 100 $5.51 1000 $5.27 10000 $1.92	Buy Now
IXYS Corporation IXGH30N60C3D1 IGBT 600V 60A 220W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH30N60C3D1	Tube	1,377		1	1 $6.96 10 $6.96 100 $4.278 1000 $3.48663 10000 $3.48663	Buy Now
TTI	IXGH30N60C3D1	Tube	360		30	1 - 10 - 100 $4.24 1000 $4.24 10000 $4.24	Buy Now

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30N60 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
30N60C3		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF
30N60C3D		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

30N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
30n60b Abstract: 30N60 30N60C ic 931 Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	30N60B 30N60C O-268 O-247 30n60b 30N60 30N60C ic 931	PDF
30N60P Abstract: No abstract text available Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS VDSS ID25 = = RDS on ≤ ≤ trr Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	30N60P 30N60PS O-268 PLUS220 30N60P	PDF
Untitled Abstract: No abstract text available Text: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D ﬂ D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	30N60C5 O-247 20090209d	PDF
30N60P Abstract: 30N60 IXTQ30N60P PLUS220SMD equivalent for 30n60p Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	30N60P 30N60PS O-268 PLUS220 30N60P 30N60 IXTQ30N60P PLUS220SMD equivalent for 30n60p	PDF
30n60 Abstract: 30N60B2 Text: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGP 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B2 IC110 O-220 30n60 30N60B2	PDF
30N60B2 Abstract: No abstract text available Text: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60B2 IXGT 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B2 IC110 O-268 30N60B2	PDF
30n60c Abstract: No abstract text available Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Preliminary Data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW	Original	30N60B 30N60C O-247 O-268	PDF
Untitled Abstract: No abstract text available Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B2D1 IC110	PDF
Untitled Abstract: No abstract text available Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	30N60B 30N60C O-268	PDF
30n60b Abstract: 30n60 TO-247AA 15a020 Text: HiPerFASTTM IGBT with Diode IXGH 30N60BU1 IXGT 30N60BU1 Combi Pack VCES IC25 VCE sat tfi = 600 V = 60 A = 1.8 V = 100 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	30N60BU1 O-268 IC110 O-247 728B1 30n60b 30n60 TO-247AA 15a020	PDF
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT with Diode IXGH 30N60BU1 VCES IXGT 30N60BU1 IC25 VCE sat tfi = 600 V = 60 A = 1.8 V = 100 ns TO-268 (IXGT) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous	Original	30N60BU1 O-268 IC110 30N60BU1	PDF
30N60B2D1 Abstract: ixgh30n60b2d1 Text: Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions IXGH 30N60B2D1 VCES IXGT 30N60B2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B2D1 IC110 O-247 O-268 728B1 123B1 065B1 ixgh30n60b2d1	PDF
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT with Diode VCES = 600 V IC25 = 60 A VCE sat = 1.8 V tfi(typ) = 100 ns IXGH 30N60BD1 IXGT 30N60BD1 Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V	Original	30N60BD1 30N60BD1 O-247 O-268 O-268	PDF
30N60B Abstract: 30N60C Text: High Speed IGBT VCES Short Circuit SOA Capability IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B 30N60C O-247 O-268 30N60C	PDF

30n60p Abstract: No abstract text available Text: Advanced Technical Information IXTQ 30N60P IXTT 30N60P PolarHVTM Power MOSFET VDSS ID25 = 600 V = 30 A ≤ 240 mΩ Ω RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V	Original	30N60P 30N60P O-268 O-268 405B2	PDF
4013V Abstract: Siemens DIODE E 1220 30N60B2D1 Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30N60B2D1 30N60B2D1 IC110 O-247 O-268 4013V Siemens DIODE E 1220	PDF
MOSFET IXYS TO-220 Abstract: No abstract text available Text: IXKH 30N60C5 IXKP 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S D(TAB) TO-220 AB (IXKP)	Original	30N60C5 O-247 O-220 MOSFET IXYS TO-220	PDF
Untitled Abstract: No abstract text available Text: IXKH 30N60C5 COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	30N60C5 O-247 20080310b	PDF
UPS SIEMENS Abstract: 30N60C siemens servo motor siemens igbt Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGP 30N60C2 C2- Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads)	Original	30N60C2 IC110 O-220 UPS SIEMENS 30N60C siemens servo motor siemens igbt	PDF
30n60 Abstract: 30N60P PLUS220SMD Text: Advanced Technical Information PolarHVTM Power MOSFET IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 = 600 V = 30 A Ω RDS on ≤ 240 mΩ Symbol Test Conditions Maximum Ratings	Original	30N60P 30N60PS O-247 PLUS220 30N60P 30n60 PLUS220SMD	PDF
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	30N60C2D1 IC110 O-247 O-268	PDF
B1116 Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1 Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40	OCR Scan	O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1	PDF
1XYS Abstract: No abstract text available Text: a ix Y S 1 Preliminary Data Sheet v CES IXGH 30N60B IXGH 30N60BS ^C25 vv CE sat HiPerFAST IGBT = 600 V = 60 A = 1.8 V = 130 ns tfi TO-247 SMD (30N60BS) Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RQE= 1 M il	OCR Scan	30N60B 30N60BS 13/10Nm/lb O-247 1XYS	PDF
Untitled Abstract: No abstract text available Text: I Z II X Y S HiPerFAST IGBT with Diode V.CES IXGH 30N60BD1 IXGT 30N60BD1 600 60 1.8 C25 CE sat V A V 100 ns tfi(typ) Preliminary data sheet Maximum Ratings Symbol TestC onditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i	OCR Scan	30N60BD1 O-268 O-247	PDF

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30N60 Search Results

30N60 Price and Stock

Infineon Technologies AG IGW30N60TPXKSA1

Vishay Siliconix SIHF30N60E-GE3

Infineon Technologies AG IGB30N60TATMA1

Bourns Inc BIDW30N60T

IXYS Corporation IXGH30N60C3D1

30N60 Datasheets (2)

30N60 Datasheets Context Search

30n60b

30N60P

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30N60P

30n60

30N60B2

30n60c

Untitled

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30n60b

Untitled

30N60B2D1

Untitled

30N60B

30n60p

4013V

MOSFET IXYS TO-220

Untitled

UPS SIEMENS

30n60

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B1116

1XYS

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