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    30N60P Search Results

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    30N60P Price and Stock

    Littelfuse Inc IXTH30N60P

    MOSFET N-CH 600V 30A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH30N60P Tube 477 1
    • 1 $9.84
    • 10 $9.84
    • 100 $6.19867
    • 1000 $9.84
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    Newark IXTH30N60P Bulk 300
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    • 1000 $5.68
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    Littelfuse Inc IXFH30N60P

    MOSFET N-CH 600V 30A TO247AD
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    DigiKey IXFH30N60P Tube 300 1
    • 1 $9.89
    • 10 $9.89
    • 100 $6.23467
    • 1000 $9.89
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    Newark IXFH30N60P Bulk 300
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    RS IXFH30N60P Bulk 8 Weeks 30
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    • 100 $8.43
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    IXYS Corporation IXTV30N60P

    MOSFET N-CH 600V 30A PLUS220
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    DigiKey IXTV30N60P Tube
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    IXYS Corporation IXFV30N60P

    MOSFET N-CH 600V 30A PLUS220
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    DigiKey IXFV30N60P Tube
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    IXYS Corporation IXTT30N60P

    MOSFET N-CH 600V 30A TO268
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    DigiKey IXTT30N60P Tube 30
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    • 100 $5.34967
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    Mouser Electronics IXTT30N60P
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    • 100 $6.81
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    TME IXTT30N60P 1
    • 1 $6.96
    • 10 $5.53
    • 100 $4.97
    • 1000 $4.97
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    30N60P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    30N60P

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS VDSS ID25 = = RDS on ≤ ≤ trr Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		30N60P 30N60PS O-268 PLUS220 30N60P PDF

    30N60P

    Abstract: 30N60 IXTQ30N60P PLUS220SMD equivalent for 30n60p
    Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		30N60P 30N60PS O-268 PLUS220 30N60P 30N60 IXTQ30N60P PLUS220SMD equivalent for 30n60p PDF

    30n60p

    Abstract: No abstract text available
    Text: Advanced Technical Information IXTQ 30N60P IXTT 30N60P PolarHVTM Power MOSFET VDSS ID25 = 600 V = 30 A ≤ 240 mΩ Ω RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V


    Original     		30N60P 30N60P O-268 O-268 405B2 PDF

    30n60

    Abstract: 30N60P PLUS220SMD
    Text: Advanced Technical Information PolarHVTM Power MOSFET IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 = 600 V = 30 A Ω RDS on ≤ 240 mΩ Symbol Test Conditions Maximum Ratings


    Original     		30N60P 30N60PS O-247 PLUS220 30N60P 30n60 PLUS220SMD PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω ≤ 200 ns trr IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings


    Original     		30N60P 30N60PS PLUS220 30N60P O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET VDSS = 600 V ID25 = 15 A Ω RDS on ≤ 250 mΩ ≤ 250 ns trr IXFC 30N60P IXFR 30N60P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		30N60P PDF

    30N60P

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 30N60P VDSS ID25 RDS on Electrically Isolated Back Surface = 600 V = 17 A ≤ 250 mΩ Ω N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		30N60P 405B2 30N60P PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		30N60P 30N60PS O-247 PLUS220 O-268 30N60P PDF

    30N60P

    Abstract: ISOPLUS247 c5125
    Text: PolarHVTM HiPerFET Power MOSFET VDSS = 600 V ID25 = 15 A Ω RDS on ≤ 250 mΩ ≤ 250 ns trr IXFC 30N60P IXFR 30N60P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		30N60P 150olts 30N60P ISOPLUS247 c5125 PDF

    QG SMD TRANS

    Abstract: 30N60P 30n60 PLUS220SMD t30n60p
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω ≤ 200 ns trr IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings


    Original     		30N60P 30N60PS PLUS220 30N60P O-247 QG SMD TRANS 30n60 PLUS220SMD t30n60p PDF

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF