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    2N100 Price and Stock

    Walsin Technology Corporation 0402N100G500CT

    CAP CER 10PF 50V C0G/NP0 0402
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    DigiKey 0402N100G500CT Cut Tape 381,712 1
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    0402N100G500CT Digi-Reel 381,712 1
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    0402N100G500CT Reel 380,000 10,000
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    Walsin Technology Corporation 0402N100D500CT

    CAP CER 10PF 50V C0G/NP0 0402
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    Newark 0402N100D500CT Cut Tape 11,013 10
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    Bristol Electronics 0402N100D500CT 6,648
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    Walsin Technology Corporation 0402N100F500CT

    CAP CER 10PF 50V C0G/NP0 0402
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    Chip-Germany GmbH 0402N100F500CT 3,096
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    Vishay Dale NTHS0603N02N1002JE

    THERMISTOR NTC 10KOHM 3477K 0603
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    DigiKey NTHS0603N02N1002JE Cut Tape 4,911 1
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    NTHS0603N02N1002JE Digi-Reel 4,911 1
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    RS NTHS0603N02N1002JE Bulk 3,970 2,000
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    Vishay Dale NTHS0402N02N1002JE

    THERMISTOR NTC 10KOHM 3477K 0402
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    2N100 Datasheets (110)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N100 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N100 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N100 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N100 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N100 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N100 Unknown GE Transistor Specifications Scan PDF
    2N100 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1000 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1000 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1000 Unknown Vintage Transistor Datasheets Scan PDF
    2N1000 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1000 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1000 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1000 Unknown GE Transistor Specifications Scan PDF
    2N1000 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1003 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1003 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1003 Unknown Discontinued Transistor Data Book 1975 Scan PDF

    2N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PA6015A

    Abstract: 2n2570 KT3101A-2 BF250 SG119 2N1269 2SC1071 2S078 LOW-POWER SILICON NPN PA6015
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 2Nl199A 2N770 2N770 2N3511 2N918 2N1268 2N1271 2N1139 2N728 FMMT2369 2N2~t U 15 20 2N1006 2Nl199 PN5131 PN5131 PN5131 2N476 2N1417 2N1663 2N5131 ~~~~~ 25 30 2N771 MPS5131 MPS5131 AST5220 2N5220 BF250 04024 A5T5219


    Original     		PDF 2Nl199A 2N770 2N3511 2N918 2N1268 2N1271 2N1139 2N728 FMMT2369 PA6015A 2n2570 KT3101A-2 BF250 SG119 2N1269 2SC1071 2S078 LOW-POWER SILICON NPN PA6015

    Untitled

    Abstract: No abstract text available
    Text: 2N1008A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)300m Absolute Max. Power Diss. (W)400m# Maximum Operating Temp (øC)85þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2N1008A

    2N1000

    Abstract: No abstract text available
    Text: 2N1000 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)40 I(C) Max. (A) Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.40 h(FE) Max. Current gain.


    Original     		PDF 2N1000

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information High Voltage IGBT VCES IXGP 2N100 1000 V IXGP 2N100A 1000 V Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC90 VCE SAT 1.5 A


    Original     		PDF 2N100 2N100A O-220

    Untitled

    Abstract: No abstract text available
    Text: 2N1003 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2N1003

    Untitled

    Abstract: No abstract text available
    Text: 2N100 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)5.0m Absolute Max. Power Diss. (W)25m Maximum Operating Temp (øC)50õ I(CBO) Max. (A)2.0uØ @V(CBO) (V) (Test Condition)4.5 h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2N100

    Untitled

    Abstract: No abstract text available
    Text: 2N1004 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2N1004

    2n1009

    Abstract: No abstract text available
    Text: 2N1009 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35ã V(BR)CBO (V)35 I(C) Max. (A)300m Absolute Max. Power Diss. (W)400m# Maximum Operating Temp (øC)85þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2N1009

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage IGBT VCES IXGP 2N100 1000 V IXGP 2N100A 1000 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original     		PDF 2N100 2N100A O-220 O-220

    IXGP2N100

    Abstract: IXGP2N100A 2N100 IXYS 2N100A
    Text: High Voltage IGBT VCES IXGP 2N100 1000 V IXGP 2N100A 1000 V Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 4 A I C90 TC = 90°C


    Original     		PDF 2N100 2N100A O-220 IXGP2N100A IXGP2N100 IXGP2N100 IXGP2N100A IXYS

    2N100

    Abstract: FIGURE10 125OC IXTA2N100 IXTP2N100
    Text: High Voltage MOSFET IXTA 2N100 IXTP 2N100 VDSS = 1000 V ID25 =2A RDS on = 7 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF 2N100 O-220AB O-263 125OC Figure10. 2N100 FIGURE10 125OC IXTA2N100 IXTP2N100

    Untitled

    Abstract: No abstract text available
    Text: VCES High Voltage IGBT IXGP 2N100 1000 V IXGP 2N100A 1000 V Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 4 A I C90 TC = 90°C 2 A ICM TC = 25°C, 1 ms


    Original     		PDF 2N100 2N100A O-220 IXGP2N100A IXGP2N100

    Untitled

    Abstract: No abstract text available
    Text: 2N1008B Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)300m Absolute Max. Power Diss. (W)400m# Maximum Operating Temp (øC)85þ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)45 h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2N1008B

    Untitled

    Abstract: No abstract text available
    Text: 2N1005 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)25m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)5.0 V(CE)sat Max. (V).60 @I(C) (A) (Test Condition)10m


    Original     		PDF 2N1005

    V/2N1008

    Abstract: No abstract text available
    Text: 2N1008 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)300m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2N1008 V/2N1008

    Untitled

    Abstract: No abstract text available
    Text: ATTENUATORS Type N, up to 6 GHz, 100 Watts SPECIFICATIONS: Models: XN100W-XX, XN100W-XXF & XN100W-XXM Electrical: Frequency Range Standard Freq. Values Standard dB Values Attenuation Accuracy 3 & 6 dB 10 dB 20 & 30 dB 40 dB VSWR Max. DC - 1.5 GHz ±0.50 dB


    Original     		PDF XN100W-XX, XN100W-XXF XN100W-XXM 2N100W-03F 6N100W-20FM XN100W-XXY XN100W-ATT:

    BH 3540

    Abstract: No abstract text available
    Text: □ IXYS IX S P2N 100 IXSP2N 100A Advanced Technical Information v CES High Voltage IGBT 2N100 1000 V IXSP 2N100A 1000 V Sym bol T est C o n d itio n s v CES Tj = CGR Tj = 25°C to 150°C; l^E= 1 M ß 1000 V ±20 V GEM ±30 V Tc 25°C ^C90 Tc = 25 °C, 1 ms


    OCR Scan     		PDF IXSP2N100 IXSP2N100A 2N100A D-68623 BH 3540

    40N60A

    Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
    Text: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A


    OCR Scan     		PDF 2N100 30N60 40N60 25N100 45N100 45N120 2N100A 10N60A 24N60A 30N6QA 40N60A G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    transistor b1154

    Abstract: B1154 10PE1 2N2962 2N1103 ASY13-2 GET116 2SC5220 AFY11 ASY12
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 transistor b1154 B1154 10PE1 2N2962 2N1103 ASY13-2 GET116 2SC5220 AFY11 ASY12

    2N1103

    Abstract: CK26A 2SA474 2SA475 2N1524 OC303 OC309-1 OC309-2 OC304 A1383 transistor
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2N1103 CK26A 2SA474 2SA475 2N1524 OC303 OC309-1 OC309-2 OC304 A1383 transistor

    2N95A

    Abstract: 2N95 2N100 IXTM2N100 IXTM2N95 IXTP2N100 IXTP2N95
    Text: 1ÖE D I X Y S CORP • 4böb22b QOOGLOS T ■ IXTP2N95, 2N100, IXTM2N95, 2N100 □ IX Y S 2 A M PS, 950-1000 V, 6.0Q/7.0Q T V £ °l-ll MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous


    OCR Scan     		PDF IXTP2N95, IXTP2N100, IXTM2N95, IXTM2N100 IXTP2N95 IXTM2N95 IXTP2N100 1XTM2N100 O-220 300/js, 2N95A 2N95 2N100 IXTM2N95

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29