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    IXTA2N100 Price and Stock

    IXYS Corporation IXTA2N100

    MOSFET N-CH 1000V 2A TO263
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    DigiKey IXTA2N100 Tube 50
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    Mouser Electronics IXTA2N100
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    Littelfuse Inc IXTA2N100P

    MOSFET N-CH 1000V 2A TO263
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    DigiKey IXTA2N100P Tube 300
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    Arrow Electronics IXTA2N100P 292 20 Weeks 1
    • 1 $1.3023
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    Newark IXTA2N100P Bulk 300
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    IXYS Corporation IXTA2N100-TRL

    MOSFET N-CH TO263
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    Littelfuse Inc IXTA2N100P-TRL

    MOSFET N-CH 1000V 2A TO263
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    DigiKey IXTA2N100P-TRL Reel 800
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    Newark IXTA2N100P-TRL Reel 800
    • 1 $2.22
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    IXYS Corporation IXTA2N100P

    MOSFETs 2 Amps 1000V 7.5 Rds
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    Mouser Electronics IXTA2N100P
    • 1 $3.59
    • 10 $3.02
    • 100 $2.41
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    TTI IXTA2N100P Tube 300
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    TME IXTA2N100P 1
    • 1 $2.64
    • 10 $2.11
    • 100 $1.96
    • 1000 $1.96
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    Find more IXTA2N100 price and stock on Findchips.com

    IXTA2N100 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTA2N100 IXYS 1000V high voltage MOSFET Original PDF
    IXTA2N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 2A TO-263 Original PDF
    IXTA2N100SN IXYS Transistor Mosfet N-CH 1000V 2A 3TO-263 AA Original PDF

    IXTA2N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTP2N100

    Abstract: 2N100 IXTA2N100
    Text: IXTA2N100 IXTP2N100 High Voltage MOSFET VDSS ID25 RDS on = 1000V = 2A ≤ 7Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000


    Original     		PDF IXTA2N100 IXTP2N100 O-263 2N100 3X-G68 IXTP2N100 IXTA2N100

    Untitled

    Abstract: No abstract text available
    Text: Polar VHVTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A ≤ Ω 7.5Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA2N100P IXTP2N100P IXTY2N100P O-263 2N100P

    IXTP2N100P

    Abstract: 2N100P IXTA2N100P IXTP2N100
    Text: PolarTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A ≤ 7.5Ω Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA2N100P IXTP2N100P IXTY2N100P O-263 2N100P 4-03-08-A IXTP2N100P 2N100P IXTA2N100P IXTP2N100

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A Ω ≤ 7.5Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA2N100P IXTP2N100P IXTY2N100P O-263 2N100P 4-03-08-A

    Untitled

    Abstract: No abstract text available
    Text: High Voltage MOSFET VDSS ID25 IXTA2N100 IXTP2N100 RDS on = 1000V = 2A Ω ≤ 7Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000


    Original     		PDF IXTA2N100 IXTP2N100 O-263 2N100 3X-G68

    MOSFET 11N80 Data sheet

    Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
    Text: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250


    Original     		PDF O-247 O-220 O-263 O-264 67N10 75N10 50N20 C2-10 C2-18 C2-20 MOSFET 11N80 Data sheet MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640

    2N100

    Abstract: FIGURE10 125OC IXTA2N100 IXTP2N100
    Text: High Voltage MOSFET IXTA 2N100 IXTP 2N100 VDSS = 1000 V ID25 =2A RDS on = 7 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF 2N100 O-220AB O-263 125OC Figure10. 2N100 FIGURE10 125OC IXTA2N100 IXTP2N100

    Untitled

    Abstract: No abstract text available
    Text: High Voltage MOSFET IXTA2N100 IXTP2N100 N-Channel Enhancement Mode v DSS ^D25 P DS on =1000 V =2A =7Q 9 Symbol Test Conditions V ¥ dss Tj =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 MQ 1000 V Continuous i2 0 V Transient 130 V VGS v GSM ^D25


    OCR Scan     		PDF IXTA2N100 IXTP2N100 Cto150 O-263 O-22QAB 1999IXYS C2-76 C2-77

    Irfp250 irfp460

    Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
    Text: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)


    OCR Scan     		PDF O-204 O-264 ISOPLUS247 O-220 O-252 O-247 O-268 ISOPLUS220 O-263 OT-227B Irfp250 irfp460 IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20