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    12N60 Search Results

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    Rochester Electronics LLC FQP12N60

    MOSFET N-CH 600V 10.5A TO220-3
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    DigiKey FQP12N60 Tube 9,664 222
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    STMicroelectronics STD12N60M2

    MOSFET N-CHANNEL 600V 9A DPAK
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    DigiKey STD12N60M2 Digi-Reel 7,439 1
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    STD12N60M2 Cut Tape 7,439 1
    • 1 $1.99
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    STD12N60M2 Reel 2,500 2,500
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    Avnet Americas STD12N60M2 Reel 14 Weeks 2,500
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    Newark STD12N60M2 Reel 2,500
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    Avnet Silica STD12N60M2 15 Weeks 2,500
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    EBV Elektronik STD12N60M2 5,000 15 Weeks 2,500
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    Rochester Electronics LLC FQB12N60TM

    N-CHANNEL POWER MOSFET
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    DigiKey FQB12N60TM Bulk 6,990 217
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    Rochester Electronics LLC FQP12N60C

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey FQP12N60C Bulk 4,340 166
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    Rochester Electronics LLC HGT1S12N60C3D

    IGBT 600V 24A TO-262
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    DigiKey HGT1S12N60C3D Bulk 2,637 226
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    Find more 12N60 price and stock on Findchips.com

    12N60 Datasheets (11)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    12N60 Unisonic Technologies 12 Amps, 600/650 Volts N-CHANNEL MOSFET Original PDF
    12N-60 Inmet ATTENUATOR Scan PDF
    12N60C3 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N60C3D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N60C3D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N60CD1 IXYS HiPerFAST IGBT Lightspeed Original PDF
    12N60D1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N60D1C Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N60D1D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N-60F Inmet ATTENUATOR Scan PDF
    12N-60M Inmet ATTENUATOR Scan PDF

    12N60 Datasheets Context Search

    Catalog Datasheet
    Type
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    PDF

    12n60c

    Abstract: transistor 12n60c IXGA 12N60C IXGA12N60C IXGP12N60C
    Text: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		12N60C O-263 O-220 728B1 transistor 12n60c IXGA 12N60C IXGA12N60C IXGP12N60C PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGR 12N60C ISOPLUS247TM Electrically Isolated Back Surface VCES = 600 V IC25 = 15 A VCE(sat) = 2.1 V tfi(typ) = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		12N60C ISOPLUS247TM PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		12N60 12N60 QW-R502-170 PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IX Y S Advanced Technical Information HiPerFAST IGBT Lightspeed™ Series IXGA 12N60CD1 IXGP 12N60CD1 600 V 24 A 2.1 V 55 ns V CES ^C25 V , CE sat Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		12N60CD1 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		12N60K-MT 12N60K-MT QW-R502-B06 PDF

    12N60B

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH 12N60B VDSS = 600 ID25 = 24 VCE SAT = 2.1 tfi(typ) = 120 Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		12N60B O-247 O-247 12N60B PDF

    12N60CD1

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600


    Original     		12N60CD1 12N60CD1 O-263 O-220 PDF

    12N60C

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms


    Original     		12N60C O-247 O-247 12N60C PDF

    12n60b

    Abstract: 12n60bd1 12N60BD
    Text: IXGA 12N60BD1 IXGP 12N60BD1 HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms


    Original     		12N60BD1 O-220 12n60b 12n60bd1 12N60BD PDF

    Untitled

    Abstract: No abstract text available
    Text: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		12N60C O-263 O-220 728B1 PDF

    12n60a

    Abstract: UTC12N60 12N-60a 12N60 12N60B 12N60L 12N60-A 12N60-B
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		12N60 12N60 12N60L QW-R502-170 12n60a UTC12N60 12N-60a 12N60B 12N60L 12N60-A 12N60-B PDF

    12n60c

    Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB
    Text: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS 12N60C3DR, 12N60C3DR, 12N60C3DRS CT ODU ODUCT


    Original     		G12N6 12N60 S12N6 HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS GTG12N 12n60c 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB PDF

    12N60CD1

    Abstract: 12n60c
    Text: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original     		12N60CD1 728B1 12N60CD1 12n60c PDF

    12n60b

    Abstract: servo motors IXGH12N60B dc motor high torque 12N60 12N60-B
    Text: HiPerFASTTM IGBT IXGH 12N60B VDSS = 600 ID25 = 24 VCE SAT = 2.1 tfi(typ) = 120 Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		12N60B 12n60b servo motors IXGH12N60B dc motor high torque 12N60 12N60-B PDF

    IXGA 12N60C

    Abstract: No abstract text available
    Text: Advanced Data HiPerFAST IGBT vCES IXGA 12N60C IXGP 12N60C = = = = ^C25 v" CE sat ^fi(typ) 600 V 24 A 2.1 V 55 ns 8j $ Symbol Test Conditions Maximum Ratings VCES Tj = 25‘>C to 150°C 600 V v" cgr Tj = 25°C to 150°C; RGE = 1 M£2 600 V v¥ges v GEM


    OCR Scan     		12N60C 12N60C O-263 O-220 IXGA 12N60C PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH 12N60BD1 VDSS ID25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient


    Original     		12N60BD1 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: Low VCE sat IGBT with Diode IXSA 12N60AU1 VCES = 600 V IC25 = 24 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


    Original     		12N60AU1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGR 12N60C ISOPLUS247TM (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


    Original     		12N60C ISOPLUS247TM 728B1 PDF

    12N60l

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		12N60 12N60 QW-R502-170 12N60l PDF

    12n60c

    Abstract: transistor 12n60c 98503B 12N60
    Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM


    Original     		12N60C O-247 728B1 12n60c transistor 12n60c 98503B 12N60 PDF

    12n60b

    Abstract: 12N60-B 98909
    Text: IXGA 12N60B IXGP 12N60B HiPerFASTTM IGBT VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 120 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		12N60B O-220 with020 728B1 12n60b 12N60-B 98909 PDF

    12n60 dc

    Abstract: 12n60
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		12N60 12N60 12N60L 12N60G QW-R502-170 12n60 dc PDF

    IGBT g

    Abstract: TO263AA
    Text: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		12N60CD1 12N60CD1 O-220 O-263 IGBT g TO263AA PDF

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S L o w V ^ IG B T with Diode IXSA 12N60AU1 VCES IC25 VCE sat 600 V 24 A 2.5 V Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions TO-263AA Tj =25°Cto150°C 600 V VC0R Tj =25°C to150°C ;R GE=1 MQ 600 V VGES Continuous ±20


    OCR Scan     		12N60AU1 Cto150 to150 O-263AA PDF