IXGP12N60C Search Results

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IXYS Corporation IXGP12N60C IGBT 600V 24A 100W TO220
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IXYS Corporation IXGP12N60CD1 IGBT 600V 24A 100W TO220
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IXYS Corporation IXGP12N60CDI
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Bristol Electronics	IXGP12N60CDI		18			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IXGP12N60C Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGP12N60C		IXYS	600V HiPerFAST IGBT		Original	PDF
IXGP12N60CD1		IXYS	600V HiPerFAST IGBT		Original	PDF
IXGP-12N60CD1		IXYS	HiPerFAST IGBT		Original	PDF

IXGP12N60C Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGA12N60C IXGP12N60C VCES IC25 VCE sat typ tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	IXGA12N60C IXGP12N60C O-263 O-220	PDF
IXGP12N60C Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGA12N60C IXGP12N60C VCES IC25 VCE sat typ tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	IXGA12N60C IXGP12N60C O-263 O-220 IXGP12N60C	PDF
12n60c Abstract: transistor 12n60c IXGA 12N60C IXGA12N60C IXGP12N60C Text: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	12N60C O-263 O-220 728B1 transistor 12n60c IXGA 12N60C IXGA12N60C IXGP12N60C	PDF
STR-G6551 Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision	Original	2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312	PDF
Untitled Abstract: No abstract text available Text: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	12N60C O-263 O-220 728B1	PDF
SGH80N60RUFD Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120 Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild () Fairchild ()	Original	SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGP06N60 SKB10N60 BUP400D SGB15N60 SGH80N60RUFD bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120	PDF
IXGA 12N60C Abstract: No abstract text available Text: Advanced Data HiPerFAST IGBT vCES IXGA 12N60C IXGP 12N60C = = = = ^C25 v" CE sat ^fi(typ) 600 V 24 A 2.1 V 55 ns 8j $ Symbol Test Conditions Maximum Ratings VCES Tj = 25‘>C to 150°C 600 V v" cgr Tj = 25°C to 150°C; RGE = 1 M£2 600 V v¥ges v GEM	OCR Scan	12N60C 12N60C O-263 O-220 IXGA 12N60C	PDF
ixgr32n60cd1 Abstract: IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60 Text: Discrete IGBTs with FRED Diode U r u G series C<25> min V A v T0-220(P CSH5A.T) max V typ ne PLUS247 (X) TO-268(T) ISOPLUS247™(R) TO-247(H) T0-204(M) TO-264(K) SOT-227B(N) J0 TO-263(A) ► NetV LOW SATURATION VOLTAGE TYPES 600 1000 40 2.0 200 IXGH28N60D1	OCR Scan	O-268 ISOPLUS247TM OT-227B T0-220 PLUS247TM O-263 O-247 T0-204 O-264 IXGA12N100U1 ixgr32n60cd1 IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60	PDF
Untitled Abstract: No abstract text available Text: aixY S Advanced Data Hi Per FAST IGBT IXGA 12N60C IXGP 12N60C V CES ^C25 VCE sat ^fi(typ) Symbol Test Conditions V CES ^ =25°C to150°C VC G R T,J = VGES VGEM C25 Maximum Ratings 600 V (300 V Continuous ±20 V Transient +30 V 24 A 25cC to150°C ;’ FLG t = 1 MQ	OCR Scan	12N60C to150 O-220 O-263	PDF
IXGN40N60 Abstract: IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1 Text: Discrete IGBT with FAST Diodes WifaH High Speed Series VcES V C<25 A VCE SAT) max V t typ ns TO-220 (P) JP TO-263 (A) PLUS247 (X) TO-247 (H) ► Ne w TO-268 AA T0 -2 04 (T) (M) ♦ ra ^ ISOPLUS220 ISOPLUS247™(R) SOT-2^ TO-264 (K) PLUS264™ (B) LOW SATU RATION VOLTAGE TYPES	OCR Scan	ISOPLUS247TM O-220 PLUS247TM O-263 O-268 O-247 ISOPLUS220 O-264 PLUS264TM IXGA12N100U1* IXGN40N60 IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1	PDF
Ixgr50n60 Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C Text: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)	OCR Scan	O-263 PLUS247TM O-247 IXGH28N60B IXGH31N60 O-268AA O-204 lSOPLUS247TM OT-227B IXGA20N120 Ixgr50n60 IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C	PDF