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    IXGH60N60 Price and Stock

    IXYS Corporation IXGH60N60C3D1

    IGBT 600V 75A 380W TO247AD
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    DigiKey IXGH60N60C3D1 Tube 280 1
    • 1 $12.54
    • 10 $12.54
    • 100 $8.043
    • 1000 $12.54
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    Mouser Electronics IXGH60N60C3D1 49
    • 1 $12.55
    • 10 $12.55
    • 100 $9.57
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    Newark IXGH60N60C3D1 Bulk 138 1
    • 1 $12.98
    • 10 $12.16
    • 100 $10.5
    • 1000 $9.89
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    TME IXGH60N60C3D1 271 1
    • 1 $12.34
    • 10 $9.02
    • 100 $8.77
    • 1000 $8.03
    • 10000 $8.03
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    IXYS Corporation IXGH60N60

    IGBT 600V 75A 300W TO247AD
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    DigiKey IXGH60N60 Bulk 30
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    • 100 $7.58133
    • 1000 $7.58133
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    IXYS Corporation IXGH60N60C3

    IGBT 600V 75A 380W TO247AD
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    DigiKey IXGH60N60C3 Tube 30
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    • 100 $4.762
    • 1000 $4.762
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    IXYS Corporation IXGH60N60C2

    IGBT 600V 75A 480W TO247AD
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    DigiKey IXGH60N60C2 Tube
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    IXYS Corporation IXGH60N60B2

    IGBT 600V 75A 500W TO247
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    DigiKey IXGH60N60B2 Tube
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    IXGH60N60 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGH60N60 IXYS 600V ultra low V IGBT Original PDF
    IXGH60N60 Sharp 600 V, 60 A, high current MOSIGBT Scan PDF
    IXGH60N60A Sharp 600 V, 60 A, high current MOSIGBT Scan PDF
    IXGH60N60B2 IXYS IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT Original PDF
    IXGH60N60C2 IXYS IGBT Discretes Original PDF
    IXGH60N60C3 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 380W TO247AD Original PDF
    IXGH60N60C3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 380W TO247AD Original PDF

    IXGH60N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 600V IGBT IXGH60N60C3 VCES IC110 VCE sat tfi (typ) High Speed PT IGBTs for 40-100kHz switching = = ≤ = 600V 60A 2.5V 55ns TO-247 AD (IXGH) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		40-100kHz IXGH60N60C3 IC110 O-247 60N60C3 02-12-08-B PDF

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 600V IGBTs with Diode VCES IC110 VCE sat tfi (typ) IXGH60N60C3D1 IXGT60N60C3D1 High Speed PT IGBTs for 40-100kHz switching = = ≤ = 600V 60A 2.5V 50ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC110 IXGH60N60C3D1 IXGT60N60C3D1 40-100kHz O-247 IF110 60N60C3 01-15-10-E PDF

    ixgh60n60c3

    Abstract: G60N60 G60N 60N60C3 siemens igbt inverters 02-23-09-D
    Text: IXGH60N60C3 GenX3TM C3-Class IGBT VCES IC110 VCE sat tfi (typ) High Speed PT IGBT for 40-100kHz Switching = = ≤ = 600V 60A 2.5V 50ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings 600 600


    Original     		IXGH60N60C3 IC110 40-100kHz O-247 60N60C3 02-23-09-D ixgh60n60c3 G60N60 G60N siemens igbt inverters 02-23-09-D PDF

    IXGH60N60C3D1

    Abstract: G60N60 g60n 01-15-10-E IXGT60N60C3D1 IF110 ixgh60
    Text: GenX3TM 600V IGBTs with Diode IXGH60N60C3D1 IXGT60N60C3D1 VCES IC110 VCE sat tfi (typ) High Speed PT IGBTs for 40-100kHz switching = = ≤ = 600V 60A 2.5V 50ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGH60N60C3D1 IXGT60N60C3D1 IC110 40-100kHz O-247 IF110 60N60C3 01-15-10-E IXGH60N60C3D1 G60N60 g60n 01-15-10-E IXGT60N60C3D1 IF110 ixgh60 PDF

    ixgh60n60c3

    Abstract: G60N60
    Text: IXGH60N60C3 GenX3TM 600V IGBT VCES IC110 VCE sat tfi (typ) High Speed PT IGBT for 40-100kHz Switching = = ≤ = 600V 60A 2.5V 50ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings 600 600 V V


    Original     		IXGH60N60C3 IC110 40-100kHz O-247 60N60C3 01-15-10-E ixgh60n60c3 G60N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 600V IGBT VCES IC110 VCE sat tfi (typ) IXGH60N60C3 High Speed PT IGBT for 40-100kHz Switching = = ≤ = 600V 60A 2.5V 50ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings 600 600 V V


    Original     		IC110 IXGH60N60C3 40-100kHz O-247 60N60C3 01-15-10-E PDF

    G60N60

    Abstract: ixgh60n60c3d1 IXGT60N60C3D1 g60n 60N60C3
    Text: GenX3TM 600V IGBT with Diode IXGH60N60C3D1 IXGT60N60C3D1 VCES IC110 VCE sat tfi (typ) High Speed PT IGBTs for 40-100kHz switching = = ≤ = 600V 60A 2.5V 55ns TO-268 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGH60N60C3D1 IXGT60N60C3D1 IC110 40-100kHz O-268 G60N60 ixgh60n60c3d1 IXGT60N60C3D1 g60n 60N60C3 PDF

    IXGD32N60B-5X

    Abstract: ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B
    Text: Insulated Gate Bipolar Transistors IGBT-Chips Type VCES VCE sat @ IC Cies typ. tfi typ. ns Chip type Chip size dimensions High Speed Low VCE(sat) TJM = 150°C mm Source bond wire recommend Equivalent device data sheet Dim. outline No. V V A pF mils IXGD28N30-43


    Original     		IXGD28N30-43 IXGD40N30-5X IXGD12N60B-3X IXGD31N60-4X IXGD41N60-5X IXGD60N60-7Y IXGD200N60B-9X IXGD2N100-1M IXGD4N100-1T IXGD8N100-2L IXGD32N60B-5X ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    smps 500W

    Abstract: smps 500w half bridge 500w half bridge smps smps 1kW IRFP450 full bridge smps 100w half bridge h bridge irf740 smps igbt HGTG30N60A4 1kW IGBT
    Text: 108872 IGBT LC 0006.1 9/11/00 11:28 AM Page 1 First-Choice Power Switch IGBT Switch Mode Power Supply SMPS IGBTs SMPS IGBT Product Offering New SMPS IGBTs are now the first-choice power switch for high-frequency, off-line power conversion Intersil has developed the 600V IGBT


    Original     		100kHz 100kHz HGTG12N60A4 O-252AA O-220AB T0-263AB O-268 Breakdown/10 100ns 200ns smps 500W smps 500w half bridge 500w half bridge smps smps 1kW IRFP450 full bridge smps 100w half bridge h bridge irf740 smps igbt HGTG30N60A4 1kW IGBT PDF

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


    Original     		PDF

    Inverter Welder

    Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter
    Text: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM


    Original     		PB60IGBTA3B3C3 Inverter Welder inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter PDF

    SGH80N60RUFD

    Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
    Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)


    Original     		SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGP06N60 SKB10N60 BUP400D SGB15N60 SGH80N60RUFD bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120 PDF

    60N50

    Abstract: IXGH60N50 60N60 ixys 60n50 60N50A IXGH60N60 60n60. vdo 007
    Text: I X Y S CORP 1ÖE D • MbflbSSfci 0000701 b ■ Datasheet#: 3501A □ IXYS IXGH60N50,60 CURRENT MOSIGBT H ,G H December 1988 AD VAN CE DATA SHEET* ~ r - 3 ° i - i 5 MAXIMUM RATINGS Parameter Sym IXGH60N50.50A IXGH60N60.60A Unit 60 Amps, 500-600 Volts Colleotor-Emitter Voltage 1


    OCR Scan     		IXGH60N50, IXGH60N50 IXGH60N60 O-247 60N50 60N50A 60N60 ixys 60n50 60n60. vdo 007 PDF

    60N50

    Abstract: ixys 60n50 60N60 3501A
    Text: I X y S CORP 1ÛE D • MbflbSSfci 0000701 b ■ Datasheet#: 3501A □ I X Y H ,G H S December 1988 IXGH60N50,60 CURRENT MOSIGBT ADVANCE DATA SHEET* ~ r - 3 ° i- i5 MAXIMUM RATINGS Parameter Sym. IXGH60N50.50A Collector-Emitter Voltage 1 VCES 500 600 Vdo


    OCR Scan     		IXGH60N50 IXGH60N60 O-247 60N50 ixys 60n50 60N60 3501A PDF

    IXGD40N60A

    Abstract: 1XGH10N60 xgh10n60a IXGD30N60 IXGD10N60 IXGH40N60 IXGH50N60A 1X57 IXGD40N60 IXGH60N60
    Text: IXYS Insulated Gate Bipolar Transistors IGBT-Chips Type e» High Speed Low T j. s is ir c £ tn typ 28°C ns C hip typ V V A S* IXGD28N30 IXGD40N30 300 1.8 1.45 20 20 1500 2500 180 220 1X43 1X57 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60


    OCR Scan     		IXGD28N30 IXGD40N30 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60 IXGD60N60 IXGD200N60 IXGD40N60A 1XGH10N60 xgh10n60a IXGH40N60 IXGH50N60A 1X57 IXGH60N60 PDF

    T0247AC

    Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m


    OCR Scan     		B03M0WH0CTb npe06pa30Baiennx paUP212 T0220AB BUP213 BUP313 T0218AB BUP313D T0247AC IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212 PDF

    IGBT 200A 1200V

    Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D


    OCR Scan     		bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40 PDF

    IXGH24N50B

    Abstract: IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100
    Text: nixYS Insulated Gate Bipolar Transistors IGBT-Chips v Type •• c «V- Chip typ - tn » Chip s o b dbnemtons Source bm d wire »C Tj„ = l&O'C TO Equivalent device datasheet Dim. out­ line V V A pF IXGD28N30-43 IXGD40N30-5X 300 2.1 1.5 20 20 1500 2500


    OCR Scan     		IXGD28N30-43 IXGD40N30-5X IXGD12N60B-33 IXGD31N60-4X IXGD41N60-5X IXGD60N60-7X IXGD200N60-9X IXGD8N100-2L IXGD12N100-33 IXGD17N100-4T IXGH24N50B IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100 PDF

    Untitled

    Abstract: No abstract text available
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C u n o B b ie T p a H 3 M C T o p b i IG B T IX Y S C #epa npMMeHeHMa: b n po M biw ne rn-ib ix ycTaHOBKax M a n o fi m cpeflHeM m o w ,h o c tm , b npMBOAHbix CMCTeMax, b yd p o M C T B a x ynpaB ^eH M a, b 6 ecn p0B 0A H bix 6 no K ax riMTaHMA Arm


    OCR Scan     		3S88SSS588S8888g PDF

    Ixgr50n60

    Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C
    Text: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces *C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J* ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)


    OCR Scan     		O-263 PLUS247TM O-247 IXGH28N60B IXGH31N60 O-268AA O-204 lSOPLUS247TM OT-227B IXGA20N120 Ixgr50n60 IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C PDF