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    IXGR40N60 Search Results

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    IXGR40N60 Price and Stock

    IXYS Corporation IXGR40N60B

    IGBT 600V 70A 200W ISOPLUS247
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    IXYS Corporation IXGR40N60C

    IGBT 600V 75A 200W ISOPLUS247
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    IXYS Corporation IXGR40N60C2

    IGBT 600V 56A 170W ISOPLUS247
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    IXYS Corporation IXGR40N60B2

    IGBT 600V 60A 167W ISOPLUS247
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    IXYS Corporation IXGR40N60CD1

    IGBT 600V 75A 200W ISOPLUS247
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    New Advantage Corporation IXGR40N60CD1 133 1
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    IXGR40N60 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGR40N60B IXYS HiPerFAST IGBT ISOPLUS247 Original PDF
    IXGR40N60B2 IXYS IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT Original PDF
    IXGR40N60B2D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 167W ISOPLUS247 Original PDF
    IXGR40N60BD1 IXYS IGBT Discretes Original PDF
    IXGR40N60C IXYS 600V HiPerFAST IGBT Original PDF
    IXGR40N60C2 IXYS IGBT Discretes Original PDF
    IXGR40N60C2 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 170W ISOPLUS247 Original PDF
    IXGR40N60C2D1 IXYS IGBT Discretes Original PDF
    IXGR40N60C2D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 170W ISOPLUS247 Original PDF
    IXGR40N60CD1 IXYS 600V HiPerFAST IGBT Original PDF

    IXGR40N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXGR40N60

    Abstract: 40n60 40N60c 40N60CD1 IXGR40N60CD1
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.5 V = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    ISOPLUS247TM 40N60C 40N60CD1 IC110 E153432 728B1 IXGR40N60 40n60 40N60c IXGR40N60CD1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi typ = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet


    Original
    ISOPLUS247TM 40N60B2 40N60B2D1 IC110 ISOPLUS247 E153432 IF110 2x31-06B PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original
    element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    40N60BD1

    Abstract: 40N60B 40N60 IXGR40N60BD1 IXGR40N60
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60B IXGR 40N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.1 V = 180 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original
    ISOPLUS247TM 40N60B 40N60BD1 lead40N60BD1) 728B1 40N60B 40N60 IXGR40N60BD1 IXGR40N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60B IXGR 40N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.1 V = 180 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original
    ISOPLUS247TM 40N60B 40N60BD1 728B1 PDF

    IXGR40N60B2D1

    Abstract: 40N60B2D1 40N60B2 40N60 IXGR40N60 40n60b IF110 ISOPLUS247
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet


    Original
    ISOPLUS247TM 40N60B2 40N60B2D1 IC110 IF110 2x31-06B IXGR40N60B2D1 40N60B2D1 40N60B2 40N60 IXGR40N60 40n60b IF110 ISOPLUS247 PDF

    ixgr40n60b2d1

    Abstract: IXGR40N60B2 IXGR40N60
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet


    Original
    ISOPLUS247TM 40N60B2 40N60B2D1 IC110 IF110 IXGR40N60B2D1) 2x31-06B ixgr40n60b2d1 IXGR40N60B2 IXGR40N60 PDF

    ixgr40n60b2d1

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet


    Original
    ISOPLUS247TM 40N60B2 40N60B2D1 IC110 IF110 IXGR40N60B2D1) 2x31-06B ixgr40n60b2d1 PDF

    vces

    Abstract: 40N60BD1 40N60B IXGR40N60BD1
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60B IXGR 40N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.1 V = 180 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original
    ISOPLUS247TM 40N60B 40N60BD1 E153432 IXGR40N60BD1) vces 40N60B IXGR40N60BD1 PDF

    40N60CD1

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.7 V = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original
    ISOPLUS247TM 40N60C 40N60CD1 IC110 065B1 728B1 123B1 728B1 PDF

    IXGR40N60C

    Abstract: 40N60c IXGR40N60CD1 40n60 40N60CD1 IXGR40N60
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.7 V = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original
    ISOPLUS247TM 40N60C 40N60CD1 IC110 065B1 728B1 123B1 728B1 IXGR40N60C 40N60c IXGR40N60CD1 40n60 IXGR40N60 PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original
    D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF

    IXGN40N60

    Abstract: IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1
    Text: Discrete IGBT with FAST Diodes WifaH High Speed Series VcES V *C<25 A VCE SAT) max V t* typ ns TO-220 (P) JP TO-263 (A) PLUS247 (X) TO-247 (H) ► Ne w TO-268 AA T0 -2 04 (T) (M) ♦ ra ^ ISOPLUS220 ISOPLUS247™(R) SOT-2^ TO-264 (K) PLUS264™ (B) LOW SATU RATION VOLTAGE TYPES


    OCR Scan
    ISOPLUS247TM O-220 PLUS247TM O-263 O-268 O-247 ISOPLUS220 O-264 PLUS264TM IXGA12N100U1* IXGN40N60 IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1 PDF