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IXYS Corporation IXGR48N60C3D1 IGBT PT 600V 56A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGR48N60C3D1	Tube	809		1	1 $15.55 10 $15.55 100 $10.13667 1000 $15.55 10000 $15.55	Buy Now
Mouser Electronics	IXGR48N60C3D1		396			1 $15.55 10 $13.04 100 $10.13 1000 $9.62 10000 $9.62	Buy Now
Newark	IXGR48N60C3D1	Bulk	560		1	1 $16.17 10 $14.65 100 $10.55 1000 $10.02 10000 $10.02	Buy Now
Future Electronics	IXGR48N60C3D1	Tube			300	1 - 10 - 100 $9.6 1000 $9.43 10000 $9.43	Buy Now
TTI	IXGR48N60C3D1	Tube	450		30	1 - 10 - 100 $13.35 1000 $13.35 10000 $13.35	Buy Now

TME	IXGR48N60C3D1		145		1	1 $10.96 10 $9.58 100 $9.27 1000 $8.5 10000 $8.32	Buy Now

IXGR48N60C3D1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGR48N60C3D1		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 125W ISOPLUS247		Original	PDF

IXGR48N60C3D1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
48N60C3D1 Abstract: ixgr48n60c3d1 48N60 Text: GenX3TM 600V IGBT with Diode IXGR48N60C3D1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤ = 600V 56A 2.7V 38ns High Speed PT IGBTs for 40-100kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR	Original	IXGR48N60C3D1 40-100kHz IC110 247TM ID110 48N60C3D1 ixgr48n60c3d1 48N60	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information PolarHTTM IGBT with Diode VCES IC25 VCE sat tfi(typ) IXGR48N60C3D1 (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ 600 V VGES	Original	IXGR48N60C3D1 IC110 ID110	PDF
IXGR48N60C3D1 Abstract: 48N60C3D1 ixgr48n60 48N60 ixgr48n60c3 ixgr48 48N60C3 ISOPLUS247 Text: IXGR48N60C3D1 GenX3TM 600V IGBT with Diode VCES IC25 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤ = 600V 56A 2.7V 38ns High Speed PT IGBTs for 40-100kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR	Original	IXGR48N60C3D1 40-100kHz IC110 ID110 247TM IXGR48N60C3D1 48N60C3D1 ixgr48n60 48N60 ixgr48n60c3 ixgr48 48N60C3 ISOPLUS247	PDF
Inverter Welder Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter Text: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM	Original	PB60IGBTA3B3C3 Inverter Welder inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter	PDF
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250	PDF