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IXYS Corporation IXGH32N60C IGBT 600V 60A 200W TO247AD
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IXYS Corporation IXGH32N60B IGBT 600V 60A 200W TO247AD
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IXYS Corporation IXGH32N60BD1 IGBT 600V 60A 200W TO247AD
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DigiKey	IXGH32N60BD1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGH32N60CD1 IGBT 600V 60A 200W TO247AD
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IXYS Corporation IXGH32N60AU1 IGBT 600V 60A 200W TO247AD
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Quest Components	IXGH32N60AU1		6			1 $20.2275 10 $17.98 100 $17.98 1000 $17.98 10000 $17.98	Buy Now

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IXGH32N60 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF
IXGH32N60A	IXYS	600V HiPerFAST IGBT	Original	PDF
IXGH32N60AA	IXYS	600V HiPerFAST IGBT	Original	PDF
IXGH32N60AS	IXYS	600V HiPerFAST IGBT	Original	PDF
IXGH32N60AU1	IXYS	Hiperfast IGBT With Diode Combi Pack	Original	PDF
IXGH32N60AU1S	IXYS	HiPerFAST IGBT with Diode Combi Pack	Original	PDF
IXGH32N60B	IXYS	IGBT for AC motor speed control and DC servo and robot drives applications, 600V, 60A, 80ns	Original	PDF
IXGH32N60BD1	IXYS	600V HiPerFAST IGBT with diode	Original	PDF
IXGH32N60BD1	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 200W TO247AD	Original	PDF
IXGH32N60BU1	IXYS	IGBT for AC motor speed control and DC servo and robot drives applications, 600V, 60A, 80ns	Original	PDF
IXGH32N60C	IXYS	600V HiPerFAST IGBT	Original	PDF
IXGH32N60CD1	IXYS	600V HiPerFAST IGBT with diode	Original	PDF

IXGH32N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXGH32N60BU1 Abstract: No abstract text available Text: HiPerFASTTM IGBT with Diode IXGH32N60BU1 VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V = = = = 600 V 60 A 2.5V 80 ns TO-247 AD VGES Continuous ±20 V VGEM Transient	Original	IXGH32N60BU1 O-247 IXGH32N60BU1	PDF
IXGH32N60B Abstract: No abstract text available Text: HiPerFASTTM IGBT Symbol Test Conditions IXGH32N60B VCES IC25 VCE sat tfi Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM	Original	IXGH32N60B O-247 32N60B 32N60BU1 IXGH32N60B	PDF
Untitled Abstract: No abstract text available Text: IXGH32N60AU1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)60# Absolute Max. Power Diss. (W)200# Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.62 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.15	Original	IXGH32N60AU1 delay25nÃ time30nÃ time175n	PDF
IXGH32N60B Abstract: 32N60BU1 32N60B 95566B IXGH32N60 TO-247 AD Text: HiPerFASTTM IGBT Symbol Test Conditions IXGH32N60B VCES IC25 VCE sat tfi Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM	Original	IXGH32N60B O-247 32N60B 32N60BU1 IXGH32N60B 95566B IXGH32N60 TO-247 AD	PDF
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT with Diode IXGH32N60BU1 VCES IC25 VCE sat tfi Maximum Ratings = = = = 600 V 60 A 2.5V 80 ns TO-247 AD Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient	Original	IXGH32N60BU1 O-247	PDF
IXGH32N60C Abstract: 32N60C IXGH32N60 Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C	Original	32N60C IC110 O-268 O-247 IXGH32N60C 32N60C IXGH32N60	PDF
STR-G6551 Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision	Original	2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312	PDF
IXGD32N60B-5X Abstract: ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B Text: Insulated Gate Bipolar Transistors IGBT-Chips Type VCES VCE sat @ IC Cies typ. tfi typ. ns Chip type Chip size dimensions High Speed Low VCE(sat) TJM = 150°C mm Source bond wire recommend Equivalent device data sheet Dim. outline No. V V A pF mils IXGD28N30-43	Original	IXGD28N30-43 IXGD40N30-5X IXGD12N60B-3X IXGD31N60-4X IXGD41N60-5X IXGD60N60-7Y IXGD200N60B-9X IXGD2N100-1M IXGD4N100-1T IXGD8N100-2L IXGD32N60B-5X ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C VCES IC25 VCE sat tfi typ = 600 V = 60 A = 2.5 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600	Original	32N60C 32N60C IC110 O-268 O-247 728B1 123B1 065B1	PDF
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C	Original	32N60C O-268 IC110 O-247	PDF
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT with Diode IXGH 32N60BU1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms	Original	32N60BU1 O-247 IXGH32N60BU1 728B1	PDF
BC 247 B Abstract: IXGH32N60 IXGH32N60CD1 DIODE SMD GEM Text: □ IXYS ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode ^fi typ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V V GEM Transient ±30 V ^C25	OCR Scan	IXGH32N60CD1 IXGH32N60CD1S O-247 32N60CD1S) BC 247 B IXGH32N60 DIODE SMD GEM	PDF
IXGH32N60C Abstract: 610MJ Text: Advanced Data _ HiPerFAST IGBT Lightspeed™ Series vCES IXGH32N60C IXGH32N60CS 600 V 60 A 2.1 V 55 ns ^C25 vCE sat typ * fi typ 4 Symbol Test Conditions V • ces TJ vcaR C Maximum Ratings 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 M£3	OCR Scan	IXGH32N60C IXGH32N60CS O-247 32N60CS) O-247AD O-247 610MJ	PDF

smd diode 819 Abstract: rg33c Text: Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode V CES ^C25 V CE sat Combi Pack ^fi ?C = = = = 600 V 60 A 2.5V 80 ns G OE Symbol TestConditions v CES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 Mil 600 V VGES	OCR Scan	IXGH32N60BU1 IXGH32N60BU1S T0-247 O-247 smd diode 819 rg33c	PDF
IXGH32N60C Abstract: No abstract text available Text: □ IXYS HiPerFAST IGBT Lightspeed™ Series IXGH32N60C IXGH32N60CS VCES IC25 V CE sat typ tfity p 600 V 60 A 2.1 V 55 ns Prelim inary Data Sheet Symbol TestConditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i	OCR Scan	IXGH32N60C IXGH32N60CS O-247	PDF
1xgh32 Abstract: IXGH32N60B Text: Preliminary Data Sheet HiPerFAST IGBT IXGH32N60B IXGH32N60BS VCES ^C25 VCE sat t, Symbol Test Conditions V OES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 MO 600 V VGES Continuous ±20 V V OEM Transient ±30 V 60 A ^C90 Tc = 25°C Tc = 90°C	OCR Scan	IXGH32N60B IXGH32N60BS T0-247 32N60BS) 1xgh32	PDF
32N60B Abstract: 32N60BU1 IXGH32N60B Text: □IX Y S j Prelim inary Data Sheet HiPerFAST IGBT IXGH32N60B IXGH32N60BS VCES ^C25 V CE sat tfi < Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 Mi2 600 V v* GES v GEM Continuous ±20 V T ransient ±30 V Maximum Ratings	OCR Scan	IXGH32N60B IXGH32N60BS 13/IONm/lb O-247 4bflb22b 32N60B 32N60BU1	PDF
smd diode UJ 64 A Abstract: cz 017 v3 Text: □IX Y S Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode tfi Test Conditions VCES Tj = 25 °C to 150°C 600 V V CGR Tj = 25 °C to 150°C; RGE = 1 M ii 600 V v GES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25 °C ^C90	OCR Scan	IXGH32N60BU1 IXGH32N60BU1S O-247 4bflb22b smd diode UJ 64 A cz 017 v3	PDF
ixgh32n60 Abstract: MJ170 Text: HiPerFAST IGBT Lightspeed™ Series IXGH32N60C IXGH32N60CS v CES ^C25 VCE sat typ ^fity p 600 V 60 A 2.1 V 55 ns Preliminary Data Sheet Symbol Test Conditions ^C E S Tj = 25°C to 150°C 600 V T j = 25°C to 150°C; RGE = 1 MQ 600 V v CGR Maximum Ratings	OCR Scan	IXGH32N60C IXGH32N60CS O-247 32N60CS) ixgh32n60 MJ170	PDF
smd diode 819 Abstract: No abstract text available Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C	OCR Scan	IXGH32N60AU1 IXGH32N60AU1S O-247 32N60AU1S) IXGH32N60AU1 IXQH32N60AU1S XGH32N60AU1 smd diode 819	PDF
IXGD40N60A Abstract: 1XGH10N60 xgh10n60a IXGD30N60 IXGD10N60 IXGH40N60 IXGH50N60A 1X57 IXGD40N60 IXGH60N60 Text: IXYS Insulated Gate Bipolar Transistors IGBT-Chips Type e» High Speed Low T j. s is ir c £ tn typ 28°C ns C hip typ V V A S* IXGD28N30 IXGD40N30 300 1.8 1.45 20 20 1500 2500 180 220 1X43 1X57 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60	OCR Scan	IXGD28N30 IXGD40N30 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60 IXGD60N60 IXGD200N60 IXGD40N60A 1XGH10N60 xgh10n60a IXGH40N60 IXGH50N60A 1X57 IXGH60N60	PDF
KM10T Abstract: No abstract text available Text: HiPerFAST IGBT Lightspeed™ Series V CES IXGH 32N60C IXGT 32N60C ^C25 V CE sat typ ^ fity p 600 V 60 A 2.1 V 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings T j = 25°C to 150°C 600 V Tj = 25° C to 150° C; RQE = 1 MQ 600 V Continuous	OCR Scan	32N60C 32N60C O-247 KM10T	PDF
Untitled Abstract: No abstract text available Text: IXGH 32N60A IXGH 32N60AS HiPerFAST IGBT = = = = CES v C25 CE sat tfi 600 V 60 A 2.9 V 125 ns *4 $ Maximum IRatings Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V V CQR Tj = 25°C to 150°C; RGE = 1 M£2 600 V v GES Continuous ±20 V v GEM Transient	OCR Scan	32N60A 32N60AS O-247 32N60AS) Hbflb25b	PDF

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IXGH32N60 Datasheets (11)

IXGH32N60 Datasheets Context Search

IXGH32N60BU1

IXGH32N60B

Untitled

IXGH32N60B

Untitled

IXGH32N60C

STR-G6551

IXGD32N60B-5X

schematic diagram atx Power supply 500w

Untitled

Untitled

Untitled

BC 247 B

IXGH32N60C

smd diode 819

IXGH32N60C

1xgh32

32N60B

smd diode UJ 64 A

ixgh32n60

smd diode 819

IXGD40N60A

KM10T

Untitled