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    12N60C3D Search Results

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    12N60C3D Price and Stock

    Rochester Electronics LLC HGT1S12N60C3D

    24A, 600V, N-CHANNEL IGBT
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    DigiKey HGT1S12N60C3D Bulk 2,637 226
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    Rochester Electronics LLC HGT1S12N60C3DS

    IGBT, 24A, 600V, N-CHANNEL
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    DigiKey HGT1S12N60C3DS Bulk 565 143
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    Rochester Electronics LLC HGTG12N60C3D

    UFS SERIES N-CH IGBT
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    DigiKey HGTG12N60C3D Tube 300 64
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    Flip Electronics HGTP12N60C3D

    IGBT 600V 24A TO220-3
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    DigiKey HGTP12N60C3D Tube 400
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    onsemi HGTP12N60C3D

    IGBT 600V 24A TO220-3
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    DigiKey HGTP12N60C3D Tube
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    Avnet Americas HGTP12N60C3D Tube 0 Weeks, 2 Days 575
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    Newark HGTP12N60C3D Bulk 100
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    Flip Electronics HGTP12N60C3D 1,600
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    Find more 12N60C3D price and stock on Findchips.com

    12N60C3D Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    12N60C3D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N60C3D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    12N60C3D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12n60c

    Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB
    Text: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS 12N60C3DR, 12N60C3DR, 12N60C3DRS CT ODU ODUCT


    Original     		PDF G12N6 12N60 S12N6 HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS GTG12N 12n60c 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB

    HGT1S12N60C3DRS

    Abstract: 12N60CD
    Text: 12N60C3DR, 12N60C3DR, 12N60C3DR, 12N60C3DRS S E M I C O N D U C T O R 24A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode February 1998 Features Description • 24A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance


    Original     		PDF HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 1-800-4-HARRIS HGT1S12N60C3DRS 12N60CD

    12n60c3d

    Abstract: TA49182 TA4918 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49188
    Text: 12N60C3D, 12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar


    Original     		PDF HGTP12N60C3D, HGT1S12N60C3DS 150oC. TA49123. TA49188. 150oC 210ns 12n60c3d TA49182 TA4918 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49188

    12N60C3

    Abstract: 12n60c3d HGT1S12N60C3DS HGT1S12N60C3DST HGTP12N60C3D TA49123 TA49182 TA49188 12n60c
    Text: 12N60C3D, 12N60C3DS Data Sheet September 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    Original     		PDF HGTP12N60C3D, HGT1S12N60C3DS 150oC. TA49123. TA49188. 150oC 210ns 12N60C3 12n60c3d HGT1S12N60C3DS HGT1S12N60C3DST HGTP12N60C3D TA49123 TA49182 TA49188 12n60c

    TA49188

    Abstract: 12N60C3D HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49182
    Text: 12N60C3D, 12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar


    Original     		PDF HGTP12N60C3D, HGT1S12N60C3DS 150oC. TA49123. TA49188. 150oC 210ns TA49188 12N60C3D HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49182

    12n60c

    Abstract: No abstract text available
    Text: 12N60C3D, 12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    Original     		PDF HGTP12N60C3D, HGT1S12N60C3DS 150oC. TA49123. TA49188. 150oC 210ns 12n60c

    HGT1S12N60C3DR

    Abstract: HGT1S12N60C3DRS HGTG12N60C3DR HGTP12N60C3DR TB334 12N60C3 TO-262AA Package equivalent 44J1
    Text: 12N60C3DR, 12N60C3DR, 12N60C3DR, 12N60C3DRS 24A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode February 1998 Features Description • 24A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance


    Original     		PDF HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 150oC 250ns HGT1S12N60C3DR HGT1S12N60C3DRS HGTG12N60C3DR HGTP12N60C3DR TB334 12N60C3 TO-262AA Package equivalent 44J1

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    12n60c

    Abstract: 12n60c3d TA49182 12N60C3 TA49123 TA49188 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D 12N60
    Text: 12N60C3D, 12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    Original     		PDF HGTP12N60C3D, HGT1S12N60C3DS 150oC. TA49123. TA49188. 150oC 210ns 12n60c 12n60c3d TA49182 12N60C3 TA49123 TA49188 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D 12N60

    12n60c3d

    Abstract: IGBT 12n60c3D HGT1S12N60C3D HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49182 TA49188 12n60c3
    Text: 12N60C3D, 12N60C3D, 12N60C3DS S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features Description • 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices


    Original     		PDF HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS 150oC. TA49123. TA49188. 150oC 210ns 1-800-4-HARRIS 12n60c3d IGBT 12n60c3D HGT1S12N60C3D HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49182 TA49188 12n60c3

    12n60c3

    Abstract: 12n60c3d TA49182 TA49188 TA4918 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 IGBT 12n60c3D
    Text: 12N60C3D, 12N60C3DS interrii J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    OCR Scan     		PDF HGTP12N60C3D, HGT1S12N60C3DS TA49123. TA49188. TA4918ration 12n60c3 12n60c3d TA49182 TA49188 TA4918 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 IGBT 12n60c3D

    12n60c3d

    Abstract: IGBT 12n60c3D
    Text: u A Q Q ie 12N60C3D, 12N60C3D, 12N60C3DS 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Description • 24A, 600V at T c = 25°C This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transis­


    OCR Scan     		PDF HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS TA49123. TA49188. O-263AB 12n60c3d IGBT 12n60c3D

    Untitled

    Abstract: No abstract text available
    Text: u a q q ic 12N60C3DR, 12N60C3DR, 12N60C3DR, 12N60C3DRS 24A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode February 1998 Features Description • 24A, 600V at T c = 25°C This family of IGBTs was designed for optimum performance


    OCR Scan     		PDF HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 1-800-4-HARRIS

    2n60c3

    Abstract: 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent
    Text: l j A D D 12N60C3D, h g t i s i 2N60C3D, 12N60C3DS I S 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with An ti -Parai I el H y p erfa st Di o d es January 1997 Features Description • 24A, 600V at Tc = 25 °C This family of MOS gated high voltage switching devices


    OCR Scan     		PDF HGTP12N60C3D, 2N60C3D, HGT1S12N60C3DS TA49123. TA49188. 2n60c3 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent