p12n60c3
Abstract: 4040 FAIRCHILD P12N60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 RHRP1560 S12N60C3 TA49123
Text: HGTP12N60C3, HGT1S12N60C3S Data Sheet January 2000 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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HGTP12N60C3,
HGT1S12N60C3S
HGTP12N60C3
HGT1S12N60C3S
150oC.
p12n60c3
4040 FAIRCHILD
P12N60
HGT1S12N60C3S9A
LD26
RHRP1560
S12N60C3
TA49123
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g12n60c3d
Abstract: HGTG12N60C3D LD26 RHRP1560 TA49061 TA49123
Text: HGTG12N60C3D Data Sheet January 2000 File Number 4043.2 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a
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HGTG12N60C3D
HGTG12N60C3D
150oC.
TA49123.
TA49061.
210ns
150oC
g12n60c3d
LD26
RHRP1560
TA49061
TA49123
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P12N60C3
Abstract: HGT1S12N60C3 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 RHRP1560 S12N60C3 TA49123 p12n60
Text: HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S Semiconductor 24A, 600V, UFS Series N-Channel IGBTs January 1997 Features Description • 24A, 600V at TC = 25oC The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the
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HGTP12N60C3,
HGT1S12N60C3,
HGT1S12N60C3S
HGT1S12N60C3
150oC.
230ns
150oC
P12N60C3
HGT1S12N60C3S
HGT1S12N60C3S9A
HGTP12N60C3
RHRP1560
S12N60C3
TA49123
p12n60
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Untitled
Abstract: No abstract text available
Text: HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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HGTP12N60C3,
HGT1S12N60C3S
HGTP12N60C3
HGT1S12N60C3S
150oC.
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p12n60c3
Abstract: S12N60C3 RHRP1560 HGT1S12N60C3 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 TA49123 p12n60 P12N60C
Text: HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBTs January 1997 Features Description • 24A, 600V at TC = 25oC The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the
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HGTP12N60C3,
HGT1S12N60C3,
HGT1S12N60C3S
HGT1S12N60C3
150oC.
230ns
150oC
p12n60c3
S12N60C3
RHRP1560
HGT1S12N60C3S
HGT1S12N60C3S9A
HGTP12N60C3
TA49123
p12n60
P12N60C
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12n60c3d
Abstract: TA49182 TA4918 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49188
Text: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar
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HGTP12N60C3D,
HGT1S12N60C3DS
150oC.
TA49123.
TA49188.
150oC
210ns
12n60c3d
TA49182
TA4918
HGT1S12N60C3DS
HGT1S12N60C3DS9A
HGTP12N60C3D
TA49123
TA49188
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12N60C3
Abstract: 12n60c3d HGT1S12N60C3DS HGT1S12N60C3DST HGTP12N60C3D TA49123 TA49182 TA49188 12n60c
Text: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet September 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a
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HGTP12N60C3D,
HGT1S12N60C3DS
150oC.
TA49123.
TA49188.
150oC
210ns
12N60C3
12n60c3d
HGT1S12N60C3DS
HGT1S12N60C3DST
HGTP12N60C3D
TA49123
TA49182
TA49188
12n60c
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TA49188
Abstract: 12N60C3D HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49182
Text: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar
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HGTP12N60C3D,
HGT1S12N60C3DS
150oC.
TA49123.
TA49188.
150oC
210ns
TA49188
12N60C3D
HGT1S12N60C3DS
HGT1S12N60C3DS9A
HGTP12N60C3D
TA49123
TA49182
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p12n60c3
Abstract: TA49123 transistor equivalents for p12n60c3 p12n60 S12N60C3 HGTP12N60C3 RHRP1560 HGT1S12N60C3S HGT1S12N60C3S9A
Text: HGTP12N60C3, HGT1S12N60C3S Data Sheet January 2000 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have
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HGTP12N60C3,
HGT1S12N60C3S
HGTP12N60C3
HGT1S12N60C3S
150oC.
p12n60c3
TA49123
transistor equivalents for p12n60c3
p12n60
S12N60C3
RHRP1560
HGT1S12N60C3S9A
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Untitled
Abstract: No abstract text available
Text: HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a
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HGTG12N60C3D
HGTG12N60C3D
150oC.
TA49123.
TA49061.
210ns
150oC
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12n60c
Abstract: No abstract text available
Text: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a
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HGTP12N60C3D,
HGT1S12N60C3DS
150oC.
TA49123.
TA49188.
150oC
210ns
12n60c
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Untitled
Abstract: No abstract text available
Text: HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT August 1995 Features Packages JEDEC TO-220AB EMITTER COLLECTOR GATE • 24A, 600V at TC = +25oC • 600V Switching SOA Capability • Typical Fall Time - 230ns at TJ = +150oC
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HGTP12N60C3,
HGT1S12N60C3,
HGT1S12N60C3S
O-220AB
230ns
150oC
O-262AA
HGT1S12N60C3
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p12n60c3
Abstract: p12n60 HGTP12N60C3 S12N60C3 TA49123 HGT1S12N60C3S HGT1S12N60C3S9A LD26 RHRP1560
Text: HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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HGTP12N60C3,
HGT1S12N60C3S
HGTP12N60C3
HGT1S12N60C3S
150oC.
p12n60c3
p12n60
S12N60C3
TA49123
HGT1S12N60C3S9A
LD26
RHRP1560
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Untitled
Abstract: No abstract text available
Text: HGTG12N60C3D S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 24A, 600V at TC = +25 C Typical Fall Time - 210ns at TJ = +150oC Short Circuit Rating Low Conduction Loss
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HGTG12N60C3D
210ns
150oC
O-247
HGTG12N60C3D
150oC.
TA49123
1-800-4-HARRIS
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G12N60C3D
Abstract: TA49123 G12N60 G12N60C G12N60C3 HGTG12N60C3D RHRP1560 TA49061
Text: HGTG12N60C3D Data Sheet January 2000 File Number 4043.2 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a
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HGTG12N60C3D
HGTG12N60C3D
150oC.
TA49123.
TA49061.
210ns
150oC
G12N60C3D
TA49123
G12N60
G12N60C
G12N60C3
RHRP1560
TA49061
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G12N60C3D
Abstract: TA49123 igbt 100a 150v LD26 RHRP1560 TA49061 HGTG12N60C3D g12n60c3 G12N60
Text: HGTG12N60C3D S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features • • • • • Package o 24A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC Short Circuit Rating
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HGTG12N60C3D
210ns
150oC
O-247
HGTG12N60C3D
150oC.
1-800-4-HARRIS
G12N60C3D
TA49123
igbt 100a 150v
LD26
RHRP1560
TA49061
g12n60c3
G12N60
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TG12N60C3D
Abstract: g12n60c3d TG12N60 g12n G12N60
Text: HGTG12N60C3D 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with A n t i- P a r a ll e l H y p e r f a s t D i o d e J an ua ry 1997 Features Pa ckage • 24A, 600V at Tc = 25°C J E D E C S T Y L E T O -2 47 • Typical Fall T i m e . .
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OCR Scan
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HGTG12N60C3D
210ns
HGTG12N60C3D
TG12N60C3D
g12n60c3d
TG12N60
g12n
G12N60
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12n60c3
Abstract: 12n60c3d TA49182 TA49188 TA4918 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 IGBT 12n60c3D
Text: HGTP12N60C3D, HGT1S12N60C3DS interrii J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a
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OCR Scan
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HGTP12N60C3D,
HGT1S12N60C3DS
TA49123.
TA49188.
TA4918ration
12n60c3
12n60c3d
TA49182
TA49188
TA4918
HGT1S12N60C3DS
HGT1S12N60C3DS9A
HGTP12N60C3D
TA49123
IGBT 12n60c3D
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12n60c3d
Abstract: IGBT 12n60c3D
Text: u A Q Q ie HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Description • 24A, 600V at T c = 25°C This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transis
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OCR Scan
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HGTP12N60C3D,
HGT1S12N60C3D,
HGT1S12N60C3DS
TA49123.
TA49188.
O-263AB
12n60c3d
IGBT 12n60c3D
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2n60c3
Abstract: 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent
Text: l j A D D HGTP12N60C3D, h g t i s i 2N60C3D, HGT1S12N60C3DS I S 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with An ti -Parai I el H y p erfa st Di o d es January 1997 Features Description • 24A, 600V at Tc = 25 °C This family of MOS gated high voltage switching devices
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OCR Scan
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HGTP12N60C3D,
2N60C3D,
HGT1S12N60C3DS
TA49123.
TA49188.
2n60c3
12n60c3d
2n60c
2N60C3D
TA49182
IGBT 12n60c3D
transistor TE 901 equivalent
12n60c
2n60
TO-262AA equivalent
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p12n60c3
Abstract: p12n60 P12N60C T1S12 HRP1560 s12n S12N60C3 HGTP12N60 S12N60C
Text: HARRIS HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Chan nel IG BTs Jan ua ry 1997 F ea tu res Description • 24A, 600V at Tc = 25 °C The HGTP12N60C3, H G T1S12N60C3 and HG T1S12N60C3S are MOS gated high voltage switching devices combining the
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OCR Scan
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HGTP12N60C3,
HGT1S12N60C3,
HGT1S12N60C3S
T1S12N60C3
T1S12N60C3S
p12n60c3
p12n60
P12N60C
T1S12
HRP1560
s12n
S12N60C3
HGTP12N60
S12N60C
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p12n60c3
Abstract: p12n60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 S12N60C3 TA49123
Text: i n t e HGTP12N60C3, HGT1S12N60C3S r r i i J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have
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OCR Scan
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HGTP12N60C3
HGT1S12N60C3S
TA49123.
HGTP12N60rporation
p12n60c3
p12n60
HGT1S12N60C3S9A
LD26
S12N60C3
TA49123
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g12n60c3d
Abstract: Transistor No C110 C110 HGTG12N60C3D RHRP1560 TA49061 TA49123 G12N60C
Text: HGTG12N60C3D in t e r r ii J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a
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OCR Scan
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HGTG12N60C3D
HGTG12N60C3D
TA49123.
TA49061.
TA49117.
g12n60c3d
Transistor No C110
C110
RHRP1560
TA49061
TA49123
G12N60C
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P12N60C3
Abstract: P12N60C C110 HGT1S12N60C3 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 S12N60C3 TA49123 transistor bI 240
Text: HARRIS HGTP12N60C3, HGT1S12N60C3, S E M , HGT1S12N60C3S C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT October 1996 Features Description • 24A, 600V at Tc = 25°C The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the
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OCR Scan
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HGTP12N60C3,
HGT1S12N60C3,
HGT1S12N60C3S
230ns
HGTP12N60C3
T0-220AB
P12N60C3
HGT1S12N60C3
O-262AA
S12N60C3
P12N60C3
P12N60C
C110
HGT1S12N60C3S
HGT1S12N60C3S9A
S12N60C3
TA49123
transistor bI 240
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