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    G12N60C3 Search Results

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    G12N60C3 Price and Stock

    Rochester Electronics LLC HGTG12N60C3D

    UFS SERIES N-CH IGBT
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    DigiKey HGTG12N60C3D Tube 300 64
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    onsemi HGTG12N60C3D

    IGBT 600V 24A 104W TO247
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    Avnet Americas HGTG12N60C3D Tube 4 Weeks 76
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    Newark HGTG12N60C3D Bulk 60
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    Chip1Stop HGTG12N60C3D 1
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    Fairchild Semiconductor Corporation HGTG12N60C3D

    24A, 600V, UFS SERIES N-Channel IGBT WITH ANTI-PARALLEL HYPERFAST DIODE
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    Rochester Electronics HGTG12N60C3D 36 1
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    Harris Semiconductor HGTG12N60C3D

    24A, 600V, UFS SERIES N-Channel IGBT WITH ANTI-PARALLEL HYPERFAST DIODE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTG12N60C3D 300 1
    • 1 $4.8
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    • 100 $4.51
    • 1000 $4.08
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    G12N60C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    g12n60c3d

    Abstract: HGTG12N60C3D LD26 RHRP1560 TA49061 TA49123
    Text: G12N60C3D Data Sheet January 2000 File Number 4043.2 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    Original     		PDF HGTG12N60C3D HGTG12N60C3D 150oC. TA49123. TA49061. 210ns 150oC g12n60c3d LD26 RHRP1560 TA49061 TA49123

    Untitled

    Abstract: No abstract text available
    Text: G12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    Original     		PDF HGTG12N60C3D HGTG12N60C3D 150oC. TA49123. TA49061. 210ns 150oC

    Untitled

    Abstract: No abstract text available
    Text: G12N60C3D S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 24A, 600V at TC = +25 C Typical Fall Time - 210ns at TJ = +150oC Short Circuit Rating Low Conduction Loss


    Original     		PDF HGTG12N60C3D 210ns 150oC O-247 HGTG12N60C3D 150oC. TA49123 1-800-4-HARRIS

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    G12N60C3D

    Abstract: TA49123 G12N60 G12N60C G12N60C3 HGTG12N60C3D RHRP1560 TA49061
    Text: G12N60C3D Data Sheet January 2000 File Number 4043.2 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    Original     		PDF HGTG12N60C3D HGTG12N60C3D 150oC. TA49123. TA49061. 210ns 150oC G12N60C3D TA49123 G12N60 G12N60C G12N60C3 RHRP1560 TA49061

    G12N60C3D

    Abstract: TA49123 igbt 100a 150v LD26 RHRP1560 TA49061 HGTG12N60C3D g12n60c3 G12N60
    Text: G12N60C3D S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features • • • • • Package o 24A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC Short Circuit Rating


    Original     		PDF HGTG12N60C3D 210ns 150oC O-247 HGTG12N60C3D 150oC. 1-800-4-HARRIS G12N60C3D TA49123 igbt 100a 150v LD26 RHRP1560 TA49061 g12n60c3 G12N60

    g12n60c3d

    Abstract: hyperfast diode reference guide HGTG12N60C3D LD26 RHRP1560 TA49061 TA49123 g12n60c3
    Text: G12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    Original     		PDF HGTG12N60C3D HGTG12N60C3D 150oC. TA49123. TA49061. 210ns 150oC g12n60c3d hyperfast diode reference guide LD26 RHRP1560 TA49061 TA49123 g12n60c3

    TG12N60C3D

    Abstract: g12n60c3d TG12N60 g12n G12N60
    Text: G12N60C3D 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with A n t i- P a r a ll e l H y p e r f a s t D i o d e J an ua ry 1997 Features Pa ckage • 24A, 600V at Tc = 25°C J E D E C S T Y L E T O -2 47 • Typical Fall T i m e . .


    OCR Scan     		PDF HGTG12N60C3D 210ns HGTG12N60C3D TG12N60C3D g12n60c3d TG12N60 g12n G12N60

    g12n60c3d

    Abstract: Transistor No C110 C110 HGTG12N60C3D RHRP1560 TA49061 TA49123 G12N60C
    Text: G12N60C3D in t e r r ii J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    OCR Scan     		PDF HGTG12N60C3D HGTG12N60C3D TA49123. TA49061. TA49117. g12n60c3d Transistor No C110 C110 RHRP1560 TA49061 TA49123 G12N60C