Untitled
Abstract: No abstract text available
Text: 3A 600A 210ns FRD Type: 30PRA60 30PRA60 OUTLINE DRAWING FEATURES * Super Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 100 Volts thru 600 Volts Types Available Maximum Ratings Apporox Net Weight:1.19g
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210ns
30PRA60
30PRA60
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TGM-210NS
Abstract: No abstract text available
Text: RoHS AT06C10I T1/E1/CEPT ISOLATION TRANSFORMER 2Kvrms Isolation module Ideal for DC/DC Converter Applications Operating Temperature Range: -40ºC to +115ºC TGM-210NS-RLTR Compliant to IEEE802.3 Primary AT06C10I 100KHz 0.1V 100KHz 0.2V 960 0.50 2CT:1CT @60hz, 1mA
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AT06C10I
TGM-210NS-RLTR
IEEE802
100KHz
AT06C10I
2000Vrms,
06C10I
TGM-210NS
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30PRA60
Abstract: No abstract text available
Text: 3A 600V 210ns FRD Type: 30PRA60 30PRA60 OUTLINE DRAWING FEATURES * Super Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 100 Volts thru 600 Volts Types Available Maximum Ratings Apporox Net Weight:1.19g
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210ns
30PRA60
A30PRA60
30PRA60
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PDF
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Untitled
Abstract: No abstract text available
Text: HGTG12N60C3D S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 24A, 600V at TC = +25 C Typical Fall Time - 210ns at TJ = +150oC Short Circuit Rating Low Conduction Loss
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HGTG12N60C3D
210ns
150oC
O-247
HGTG12N60C3D
150oC.
TA49123
1-800-4-HARRIS
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PDF
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30PRA40
Abstract: No abstract text available
Text: 3A 400A 210ns FRD Type: 30PRA40 30PRA40 OUTLINE DRAWING FEATURES * Super Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 100 Volts thru 600 Volts Types Available Maximum Ratings Apporox Net Weight:1.19g
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210ns
30PRA40
30PRA40
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G12N60C3D
Abstract: TA49123 igbt 100a 150v LD26 RHRP1560 TA49061 HGTG12N60C3D g12n60c3 G12N60
Text: HGTG12N60C3D S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features • • • • • Package o 24A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC Short Circuit Rating
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HGTG12N60C3D
210ns
150oC
O-247
HGTG12N60C3D
150oC.
1-800-4-HARRIS
G12N60C3D
TA49123
igbt 100a 150v
LD26
RHRP1560
TA49061
g12n60c3
G12N60
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PDF
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Untitled
Abstract: No abstract text available
Text: 3A 400V 210ns FRD Type: 30PRA40 30PRA40 OUTLINE DRAWING FEATURES * Super Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 100 Volts thru 600 Volts Types Available Maximum Ratings Apporox Net Weight:1.19g
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Original
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210ns
30PRA40
30PRA40
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PDF
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TGM-210NS
Abstract: TGM-210NS-RLTR TGM-210NSRL TGM-210
Text: RoHS AT06C10I T1/E1/CEPT ISOLATION TRANSFORMER 2Kvrms Isolation module Ideal for DC/DC Converter Applications Operating Temperature Range: -40ºC to +115ºC TGM-210NS-RLTR Compliant to IEEE802.3 100% Tested for 2KV Hi-Pot Primary AT06C10I 100KHz 0.1V 100KHz 0.2V
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AT06C10I
TGM-210NS-RLTR
IEEE802
100KHz
AT06C10I
2000Vrms,
06C10I
TGM-210NS
TGM-210NSRL
TGM-210
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PDF
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Untitled
Abstract: No abstract text available
Text: ISO1050 www.ti.com SLLS983H – JUNE 2009 – REVISED JUNE 2013 ISOLATED CAN TRANSCEIVER Check for Samples: ISO1050 FEATURES 1 • • • • • • • • • • • • Meets the Requirements of ISO11898-2 5000-VRMS Isolation ISO1050DW 2500-VRMS Isolation (ISO1050DUB)
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ISO1050
SLLS983H
ISO11898-2
5000-VRMS
ISO1050DW)
2500-VRMS
ISO1050DUB)
150ns
210ns
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PDF
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sb820m
Abstract: sb850 SB800 AMD SATA 4390h Southbridge AMD Athlon II X4 a link express amd SB800 southbridge sb800 4392H
Text: AMD SB800-Series Southbridges Register Reference Guide Publication # 45482 Revision: 3.04 Issue Date: May 2011 Advanced Micro Devices 2011 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced
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SB800-Series
intelle85
sb820m
sb850
SB800
AMD SATA 4390h
Southbridge
AMD Athlon II X4
a link express
amd SB800
southbridge sb800
4392H
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PDF
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N1084
Abstract: 1575p 170M ADV7320 CCIR-656 PAL-60 T-1004 ADV7321 274M-10
Text: Multiformat 216 MHz Video Encoder with Six NSV 12-Bit DACs ADV7320/ADV7321 High definition HD input formats 16-/20-, 24-/30-bit (4:2:2, 4:4:4) parallel YCrCb Fully compliant with SMPTE 274M (1080i, 1080p @ 74.25 MHz) SMPTE 296M (720p) SMPTE 240M (1035i)
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12-Bit
ADV7320/ADV7321
24-/30-bit
1080i,
1080p
1035i)
10-bit
T-1004
625p/525p)
N1084
1575p
170M
ADV7320
CCIR-656
PAL-60
ADV7321
274M-10
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PDF
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ADV7343BSTZ2
Abstract: EIA770-3 PAL to ITU-R BT.601/656 Decoder T-1004
Text: Multiformat Video Encoder Six, 11-Bit, 297 MHz DACs ADV7342/ADV7343 FEATURES EIA/CEA-861B compliance support Programmable features Luma and chroma filter responses Vertical blanking interval VBI Subcarrier frequency (FSC) and phase Luma delay Copy generation management system (CGMS)
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11-Bit,
ADV7342/ADV7343
EIA/CEA-861B
20-/30-bit
ST-64-2
D06399-0-10/06
ADV7343BSTZ2
EIA770-3
PAL to ITU-R BT.601/656 Decoder
T-1004
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PDF
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B3 0F
Abstract: M65580MAP-XXXFP M37272MA 16X26 MV180
Text: お客様各位 資料中の「三菱電機」 「三菱XX」等名称の株式会社ルネサス テクノロジへの変更について 2003年4月1日を以って株式会社日立製作所及び三菱電機株式会社のマイコン、ロジック、
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M65580MAP-XXXFP
M65580MAP-XXXFP
M37272MA
80QFP,
00BF16
00C016
00FF16
01FF16
020F16
B3 0F
16X26
MV180
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PDF
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g12n60c3d
Abstract: HGTG12N60C3D LD26 RHRP1560 TA49061 TA49123
Text: HGTG12N60C3D Data Sheet January 2000 File Number 4043.2 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a
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HGTG12N60C3D
HGTG12N60C3D
150oC.
TA49123.
TA49061.
210ns
150oC
g12n60c3d
LD26
RHRP1560
TA49061
TA49123
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PDF
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|
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658512
Abstract: No abstract text available
Text: ADVANCE INFORMATION KM658512/L/L-L Pseudo SRAM 5 1 2 K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time: 80,100,120ns Max. — Cycle Time: Random Read/Write Cycle Time 160, 180, 210ns (Max.) • Low Power Dissipation: 200mW typ. (Active)
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OCR Scan
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KM658512/L/L-L
120ns
210ns
200mW
Cycles/32ms
itiA/200
KM658512L-L
32-Pin
600mil)
525mll)
658512
|
PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION KM658512/L/L-L Pseudo SRAM 5 1 2 K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time: 80,100,120ns Max. — Cycle Time: Random Read/Write Cycle Time 160, 180, 210ns (Max.) • Low Power Dissipation: 200mW typ. (Active)
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OCR Scan
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KM658512/L/L-L
120ns
210ns
200mW
Cycles/32ms
A/200
KM658512L-L
32-Pin
600mil)
525mil)
|
PDF
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M7707
Abstract: rd201 PLD-10 imv D6-11 BV 726 C 1 Converter w5753 fd187 sGCT function PR 161A RD202
Text: O K I Semiconductor MSM7707 Baseband integration LSI device for PHS GENERAL DESCRIPTION The MSM7707 is an LSI device with an ADPCM CODEC function, jt/4 shift QPSK modulation/ demodulation function and a TDMA-TDD function required for PHS Personal Handy phone
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OCR Scan
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MSM7707
MSM7707
32kbps)
Hz/12
b724240
0D257
TQFP100-P-1414-0
M7707
rd201
PLD-10
imv D6-11
BV 726 C 1 Converter
w5753
fd187
sGCT function
PR 161A
RD202
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PDF
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Untitled
Abstract: No abstract text available
Text: H D 6 3 0 1 V 1 , H D 6 3 A 0 1 V 1 , -H D 6 3 B01 V I C M O S M C U M icrocom puter Unit T h e HD6301V1 is an 8-bit CMOS single-chip m icrocom p u te r unit, O bject Code com patible w ith th e H D6801. 4kB ROM, 128 b y tes RAM, Serial C om m unication Interface (SCI),
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HD6301V1
D6801.
HD6301V1.
HMCS6800.
HMCS6800
HD6301V
HD63701V0.
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PDF
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TC524258AZ
Abstract: No abstract text available
Text: TOSHIBA DIGITAL INTEGRATED CIRCUIT INTEGRATED CIRCUIT TC524258AJ/AZ-10 . TC524258AJ/ A Z-12 TO SHIBA TECHNICAL DATA SILICON GATE CMOS PRELIMINARY 262, 144W 0R D S X48ITS MULTIPORT DRAM DESCRIPTION The TC524253AJ/AZ is a CM OS multiport memory equipped with a 262,144-words by 4-bits
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OCR Scan
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TC524258AJ/AZ-10
TC524258AJ/
X48ITS
TC524253AJ/AZ
144-words
512-words
TC524253AJ7
bein51
TC524253AJ
TC524258AJ
TC524258AZ
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA INTELLIGENT GTR MODULE MIG100Q201H PRELIMINARY High Power Switching Applications Motor Control Applications • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for Over-Current, UnderVoltage & Over-Temperature in One Package.
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OCR Scan
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MIG100Q201H
210ns
R0R7247
PW05780796
0020bb7
TDT7247
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA INTELLIGENT GTR MODULE MIG75Q201H PRELIMINARY High Power Switching Applications Motor Control Applications • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for Over-Current, UnderVoltage & Over-Temperature in One Package.
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OCR Scan
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MIG75Q201H
210ns
GND00
0020b43
PW05770796
IG75Q201H
0020fc
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PDF
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CSB503F30
Abstract: TA8867BN
Text: TOSHIBA _ TA8867BN TENTATIVE TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8867BN VIDEO, CHROMA, AND SYNC. SIGNAL PROCESSING IC FOR PAL/NTSC-SYSTEM COLOR TELEVISIONS. The TA8867BN is Video, Chroma, and Sync. Signal
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OCR Scan
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TA8867BN
TA8867BN
48pin
CSB503F30
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PDF
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Untitled
Abstract: No abstract text available
Text: November 1991 Edition3.0 FUJITSU DATA SHEET M B 8 1 4 4 0 0 -80•/-1o/-12 CMOS 1 M X 4 BIT FAST PAGE MODE DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400 is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cells accessible in 4-bit increments. The MB814400 features a fa st page" mode of
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OCR Scan
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/-1o/-12
MB814400
024-bits
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PDF
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Untitled
Abstract: No abstract text available
Text: November 1989 Edition 1.1 FUJITSU DATASHEET MB81C1002-70/-80/-10/-12 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 1,048,576 X 1 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C1002 is CMOS fully decoded dynamic RAM organized as 1,048,576 words x 1
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OCR Scan
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MB81C1002-70/-80/-10/-12
MB81C1002
theMB81C1002
26-LEAD
SOJ-26)
LCC-26P-M04)
C26054S-1C
MB81C1002-70
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PDF
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