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INPAQ Technology Co Ltd MCI0603TG12NHHBPDG FIXED IND 0603 12NH 250MA 0.75OH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCI0603TG12NHHBPDG	Cut Tape	74,900		1	1 $0.1 10 $0.01 100 $0.0054 1000 $0.00421 10000 $0.00381	Buy Now
	MCI0603TG12NHHBPDG	Digi-Reel	74,900		1	1 $0.1 10 $0.01 100 $0.0054 1000 $0.00421 10000 $0.00381	Buy Now
	MCI0603TG12NHHBPDG	Reel	60,000		15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Johanson Technology Inc LRW0402WG12NGG001T FIXED IND 12NH 640MA 120MOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LRW0402WG12NGG001T	Digi-Reel	21,476		1	1 $0.26 10 $0.205 100 $0.1595 1000 $0.1238 10000 $0.11187	Buy Now
	LRW0402WG12NGG001T	Cut Tape	21,476		1	1 $0.26 10 $0.204 100 $0.1582 1000 $0.12279 10000 $0.11094	Buy Now
	LRW0402WG12NGG001T	Reel	10,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.09505	Buy Now
Murata Manufacturing Co Ltd LQP03TG12NH02D FIXED IND 12NH 180MA 1.78OHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LQP03TG12NH02D	Digi-Reel	8,875		1	1 $0.1 10 $0.025 100 $0.0195 1000 $0.01517 10000 $0.01372	Buy Now
	LQP03TG12NH02D	Cut Tape	8,875		1	1 $0.1 10 $0.025 100 $0.0195 1000 $0.01517 10000 $0.01372	Buy Now
Avnet Americas	LQP03TG12NH02D	Reel		8 Weeks	15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	LQP03TG12NH02D		15,662			1 $0.1 10 $0.021 100 $0.017 1000 $0.014 10000 $0.012	Buy Now
TME	LQP03TG12NH02D				15,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip One Stop	LQP03TG12NH02D	Cut Tape	12,980			1 - 10 - 100 $0.011 1000 $0.00868 10000 $0.00845	Buy Now
Amphenol PCD A85049602G12N CONN BACKSHELL ADPT SZ7 12 SILV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	A85049602G12N	Bag	100		1	1 $10.02 10 $8.163 100 $6.6551 1000 $5.875 10000 $5.875	Buy Now
CDM Electronics	A85049602G12N					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mechatronics Fan Group PFG-12N FAN GUARD LOUVERED RAL7032
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PFG-12N	Bulk	31		1	1 $14.45 10 $14.45 100 $11.4912 1000 $10.58832 10000 $10.58832	Buy Now

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G12N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
12n60c Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB Text: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS G12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS CT ODU ODUCT	Original	G12N6 12N60 S12N6 HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS GTG12N 12n60c 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB	PDF
g12n60c3d Abstract: HGTG12N60C3D LD26 RHRP1560 TA49061 TA49123 Text: G12N60C3D Data Sheet January 2000 File Number 4043.2 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a	Original	HGTG12N60C3D HGTG12N60C3D 150oC. TA49123. TA49061. 210ns 150oC g12n60c3d LD26 RHRP1560 TA49061 TA49123	PDF
G12N60b3 Abstract: g12n60 TA49171 HGT1S12N60B3S HGT1S12N60B3S9A HGTG12N60B3 HGTP12N60B3 HGTP12N60B3D LD26 110A Text: G12N60B3, HGTP12N60B3, HGT1S12N60B3S Data Sheet April 2002 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	Original	HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S 150oC. 112ns 150oC G12N60b3 g12n60 TA49171 HGT1S12N60B3S HGT1S12N60B3S9A HGTG12N60B3 HGTP12N60B3 HGTP12N60B3D LD26 110A	PDF
G12N60B3 Abstract: HGTG12N60B3 HGTG12N60B3D LD26 Text: G12N60B3 Data Sheet August 2003 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	HGTG12N60B3 150oC. 112ns 150oC G12N60B3 HGTG12N60B3 HGTG12N60B3D LD26	PDF
HGTH12N40C1D Abstract: HGTH12N40E1D HGTH12N50C1D HGTH12N50E1D G12N40E1D Text: HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 12A, 400V and 500V JEDEC TO-218AC • VCE ON : 2.5V Max. EMITTER • TFALL: 1µs, 0.5µs COLLECTOR	Original	HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D O-218AC HGTH12N50E1D HGTH12N40C1D HGTH12N40E1D HGTH12N50C1D G12N40E1D	PDF
G12N60D1D Abstract: G12N60D1 HGTG12N60D1 AN7254 AN7260 HGTG12N60D1D Text: G12N60D1D S E M I C O N D U C T O R 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 12A, 600V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns • Low Conduction Loss	Original	HGTG12N60D1D O-247 500ns 150oC. G12N60D1D G12N60D1 HGTG12N60D1 AN7254 AN7260 HGTG12N60D1D	PDF
g12n60d1 Abstract: AN7254 AN7260 HGTP12N60D1 Text: HGTP12N60D1 S E M I C O N D U C T O R 12A, 600V N-Channel IGBT April 1995 Features Package • 12A, 600V JEDEC TO-220AB • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR FLANGE • Low Conduction Loss	Original	HGTP12N60D1 O-220AB 500ns 150oC. g12n60d1 AN7254 AN7260 HGTP12N60D1	PDF
g10n50c1 Abstract: G10N50E1 HGTP10N40E1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N50C1 Text: HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 S E M I C O N D U C T O R 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE ON : 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs	Original	HGTP10N40C1, HGTH12N40C1, O-218AC O-220AB HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40E1, g10n50c1 G10N50E1 HGTP10N40E1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N50C1	PDF
HGT1S12N60B3S Abstract: G12N60B3 HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D LD26 TB334 g12n60 Text: HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S 150oC. G12N60B3 HGT1S12N60B3S9A HGTP12N60B3D LD26 TB334 g12n60	PDF
Untitled Abstract: No abstract text available Text: G12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a	Original	HGTG12N60C3D HGTG12N60C3D 150oC. TA49123. TA49061. 210ns 150oC	PDF
HGTH12N40E1D Abstract: HGTH12N40C1D HGTH12N50C1D HGTH12N50E1D 50uh Text: HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D S E M I C O N D U C T O R 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 12A, 400V and 500V JEDEC TO-218AC • VCE ON : 2.5V Max. EMITTER • TFALL: 1µs, 0.5µs	Original	HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D O-218AC HGTH12N50E1D voltage260) HGTH12N40E1D HGTH12N40C1D HGTH12N50C1D 50uh	PDF
walkie talkie circuit diagram Abstract: Telemecanique XS1 walkie talkie circuit diagram using op amp XS2D12PA140D simple walkie talkie circuit diagram xs1-d08pa140 XSA-V11801 TF Telemecanique xsc TSX NANO CABLE XS8E1A1PAL01M12 Text: Proximity Sensors x File 9006 CONTENTS Schneider Electric Brands Description Page Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 Auto-adaptable and Standard Flat Inductive Proximity Sensor . . . . . . . . . . . . . . . 206	Original	5-4-199X) LR46094 LR44087 E39291 E39281 walkie talkie circuit diagram Telemecanique XS1 walkie talkie circuit diagram using op amp XS2D12PA140D simple walkie talkie circuit diagram xs1-d08pa140 XSA-V11801 TF Telemecanique xsc TSX NANO CABLE XS8E1A1PAL01M12	PDF
G12N60D1 Abstract: G12N60D1D AN7254 AN7260 HGTG12N60D1D G12N60 Text: G12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 12A, 600V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns • Low Conduction Loss GATE COLLECTOR BOTTOM SIDE	Original	HGTG12N60D1D O-247 500ns 150oC. G12N60D1 G12N60D1D AN7254 AN7260 HGTG12N60D1D G12N60	PDF
Untitled Abstract: No abstract text available Text: G12N60C3D S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 24A, 600V at TC = +25 C Typical Fall Time - 210ns at TJ = +150oC Short Circuit Rating Low Conduction Loss	Original	HGTG12N60C3D 210ns 150oC O-247 HGTG12N60C3D 150oC. TA49123 1-800-4-HARRIS	PDF

Untitled Abstract: No abstract text available Text: HGTP12N60B3, HGT1S12N60B3S Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S 150oC. TA49171.	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF
OZ8118 Abstract: ps223 SD CARD CONTROLLER CMD26 intel g31 msi G993P1UF RTL811C BGA969 5KR04 apa2057a intel g41 msi Text: A B C D MS-1431 VER : 0.A E DC JACK & Selector Page 27 1 1 SYS POWER Penryn Page 3,4 HOST +3V +5V FSB 667/800/1066 TPS51120 Page 29 RGB CRT NORTH BRIDGE Page 15 LVDS LVDS 2 NB9M PCIE2.0 Page 15 HDMI HDMI INTEL Dual Channel DDRII 667/800 MHZ Page 31 2 DDR-SODIMM0	Original	MS-1431 TPS51120 TPS51124 RT9173BPS OZ8118 8111B/C H11----fuqun MS-1431 OZ8118 ps223 SD CARD CONTROLLER CMD26 intel g31 msi G993P1UF RTL811C BGA969 5KR04 apa2057a intel g41 msi	PDF
TG12N60C3D Abstract: g12n60c3d TG12N60 g12n G12N60 Text: G12N60C3D 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with A n t i- P a r a ll e l H y p e r f a s t D i o d e J an ua ry 1997 Features Pa ckage • 24A, 600V at Tc = 25°C J E D E C S T Y L E T O -2 47 • Typical Fall T i m e . .	OCR Scan	HGTG12N60C3D 210ns HGTG12N60C3D TG12N60C3D g12n60c3d TG12N60 g12n G12N60	PDF
Untitled Abstract: No abstract text available Text: 4 TH IS DRAWING COPYRIGHT IS U N P U B L IS H E D . 2 3 RELEASED BY 1WCO ELECTRONICS CORPORATION. FOR PUBLIC ATIO N LOC D IS T R E V IS IO N S ALL INTERNATIONAL RIGHTS RESERVED. P LTR D E S C R IP TIO N A PR ODUCTION DATE RE LE ASE 03 S EP DWN APVD BJR MKS	OCR Scan		PDF
G12N60b3 Abstract: G12N60B HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D LD26 TB334 G12N60 Bipolar HJ Text: in t e HGTP12N60B3, HGT1S12N60B3S r r ii J a n u a ry . m Data Sheet 27A, 600V, UFS Series N-Channel IGBTs The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have	OCR Scan	HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S TA49171ration G12N60b3 G12N60B HGT1S12N60B3S9A HGTP12N60B3D LD26 TB334 G12N60 Bipolar HJ	PDF
12N50E Abstract: 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40 Text: r r I i- i a c a m e ; <Ü h g t p i 0N40C1, 40E1, s o c i , 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 o? 10A, 12A, 400V and 500V N-Channel IGBTs A p ril 1 9 9 5 Features Packages H G TH -TY P E S JE D E C TO -218A C • 10A and 12A, 400V and 500V • ^CE ON ’ 2.5V Max.	OCR Scan	0N40C1, HGTH12N40C1, -218A -220A HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, 12N50E 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40	PDF
G12N60D1 Abstract: 12n60d1 28-303 A 933 S transistors Text: HGTP12N60D1 cE W s 12A, 600V N-Channel IGBT April 1995 Features Package • 12A,600V JEDEC TO-220AB • Latch Free Operation EMfTTER CO LLECTO R • Typical Fall Time <500ns GATE • High Input Impedance CO LLECTO R FLA NG E • L o w C o n d u c tio n Loss	OCR Scan	HGTP12N60D1 O-220AB 500ns G12N60D1 12n60d1 28-303 A 933 S transistors	PDF
DIODE 3LU Abstract: DIODE 3LU 32 DIODE 3LU 35 3lu diode Text: HARFR IS HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, T c = 25°C The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the	OCR Scan	HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S HGT1S12N60B3 112ns 1-800-4-HARRIS DIODE 3LU DIODE 3LU 32 DIODE 3LU 35 3lu diode	PDF
g12n60c3d Abstract: Transistor No C110 C110 HGTG12N60C3D RHRP1560 TA49061 TA49123 G12N60C Text: G12N60C3D in t e r r ii J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a	OCR Scan	HGTG12N60C3D HGTG12N60C3D TA49123. TA49061. TA49117. g12n60c3d Transistor No C110 C110 RHRP1560 TA49061 TA49123 G12N60C	PDF

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G12N Search Results

G12N Price and Stock

INPAQ Technology Co Ltd MCI0603TG12NHHBPDG

Johanson Technology Inc LRW0402WG12NGG001T

Murata Manufacturing Co Ltd LQP03TG12NH02D

Amphenol PCD A85049602G12N

Mechatronics Fan Group PFG-12N

G12N Datasheets Context Search

12n60c

g12n60c3d

G12N60b3

G12N60B3

HGTH12N40C1D

G12N60D1D

g12n60d1

g10n50c1

HGT1S12N60B3S

Untitled

HGTH12N40E1D

walkie talkie circuit diagram

G12N60D1

Untitled

Untitled

65e9 transistor

OZ8118

TG12N60C3D

Untitled

G12N60b3

12N50E

G12N60D1

DIODE 3LU

g12n60c3d