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    13N80 Search Results

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    13N80 Price and Stock

    STMicroelectronics STF13N80K5

    MOSFET N-CH 800V 12A TO220FP
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    Win Source Electronics STF13N80K5 30,700
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    STMicroelectronics STP13N80K5

    MOSFET N-CH 800V 12A TO220
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    DigiKey STP13N80K5 Tube 1,013 1
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    Avnet Americas STP13N80K5 Bulk 14 Weeks, 5 Days 1
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    Mouser Electronics STP13N80K5 851
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    STMicroelectronics STP13N80K5 851 1
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    TME STP13N80K5 1
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    Avnet Silica STP13N80K5 5,000 15 Weeks 50
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    STMicroelectronics STB13N80K5

    MOSFET N-CH 800V 12A D2PAK
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    DigiKey STB13N80K5 Digi-Reel 909 1
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    STB13N80K5 Cut Tape 909 1
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    STB13N80K5 Reel 1,000
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    Mouser Electronics STB13N80K5 2,739
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    Newark STB13N80K5 Cut Tape 439 1
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    STB13N80K5 Reel 1,000
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    STMicroelectronics STB13N80K5 2,739 1
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    Avnet Silica STB13N80K5 1,000 15 Weeks 1,000
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    STMicroelectronics STFU13N80K5

    MOSFET N-CH 800V 12A TO220FP
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    DigiKey STFU13N80K5 Tube 899 1
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    Avnet Americas STFU13N80K5 Bulk 14 Weeks 1,000
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    Mouser Electronics STFU13N80K5 1,774
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    STMicroelectronics STFU13N80K5 1,774 1
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    onsemi FQA13N80-F109

    MOSFET N-CH 800V 12.6A TO3PN
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    DigiKey FQA13N80-F109 Tube 283 1
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    Mouser Electronics FQA13N80-F109 372
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    Newark FQA13N80-F109 Bulk 450
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    Rochester Electronics FQA13N80-F109 12,380 1
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    TME FQA13N80-F109 1
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    Richardson RFPD FQA13N80-F109 450
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    Avnet Silica FQA13N80-F109 16 Weeks 30
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    13N80 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    800 coolmos

    Abstract: No abstract text available
    Text: IXKC 13N80C Advanced Technical Information COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 13 A VDSS = 800 V RDS on max = 290 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features


    Original
    13N80C ISOPLUS220 E72873 20070703a 800 coolmos PDF

    13N80C

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 13N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous


    Original
    ISOPLUS220TM 13N80C 220TM 13N80C PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION Power MOSFET ISOPLUS220TM IXKC 13N80C VDSS = 800 V = 13 A ID25 Ω RDS on = 290 mΩ Electrically Isolated Back Surface Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220


    Original
    ISOPLUS220TM 13N80C 728B1 065B1 123B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKC 13N80C Advanced Technical Information CoolMOS 1 Power MOSFET ISOPLUS™ Package ID25 = 13 A VDSS = 800 V RDS on) max = 290 m N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220™ G G D fl S S isolated


    Original
    13N80C ISOPLUS220â E72873 20080526b PDF

    0-80V

    Abstract: No abstract text available
    Text: MegaMOSTMFET IXTH 13N80 IXTM 13N80 VDSS = 800 V = 13 A ID25 RDS on = 0.80 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient


    Original
    13N80 13N80 O-247 O-204 O-204 O-247 100ms 0-80V PDF

    13N80Q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 13N80Q IXFT 13N80Q Q Class VDSS ID25 RDS on = = = 800 V 13 A 0.70 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    13N80Q 13N80Q O-268 O-247 O-268AA PDF

    13N80C

    Abstract: 13n80 E72873
    Text: IXKC 13N80C Advanced Technical Information CoolMOS 1 Power MOSFET ISOPLUS™ Package ID25 = 13 A = 800 V VDSS RDS on) max = 290 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220™ G G D q S S isolated


    Original
    13N80C ISOPLUS220TM E72873 20080526b 13N80C 13n80 E72873 PDF

    13n80

    Abstract: No abstract text available
    Text: IXFH 13N80Q IXFT 13N80Q HiPerFETTM Power MOSFETs Q Class VDSS ID25 RDS on = 800 V = 13 A = 0.70 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    13N80Q 13N80Q O-268 O-247 O-268 13n80 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION Power MOSFET ISOPLUS220TM IXKC 13N80C VDSS = 800 V ID25 = 13 A Ω RDS on = 290 mΩ Electrically Isolated Back Surface Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220


    Original
    ISOPLUS220TM 13N80C 728B1 065B1 123B1 PDF

    11n80

    Abstract: 13N80 TEST14 D-68623
    Text: VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V MegaMOSTMFET I D25 RDS on 11 A 0.95 Ω 13 A 0.80 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 800 V V DGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V V GS


    Original
    11N80 13N80 O-247 11N80 13N80 O-204 O-204 TEST14 D-68623 PDF

    MOSFET 11N80

    Abstract: 11n80 MOSFET 15N80 MOSFET 13N80 13n80 MOSFET 11N80 Data sheet 14N80 15N80 D-68623 N-Channel MOSFETs
    Text: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 HiPerFET Power MOSFET TM IXFH/IXFM 11N80 IXFH/IXFM 13N80 IXFH/IXFM 14N80 IXFH/IXFM 15N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    11N80 13N80 14N80 15N80 MOSFET 11N80 11n80 MOSFET 15N80 MOSFET 13N80 13n80 MOSFET 11N80 Data sheet 14N80 15N80 D-68623 N-Channel MOSFETs PDF

    13N80Q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 13N80Q IXFT 13N80Q Q Class VDSS ID25 RDS on = = = 800 V 13 A 0.70 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    13N80Q 13N80Q PDF

    11N80

    Abstract: 13N80 IXFH13N80
    Text: HiPerFETTM Power MOSFETs IXFH/IXFM 11 N80 IXFH/IXFM 13 N80 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 800 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 11N80 13N80 11 13


    Original
    11N80 13N80 11N80 13N80 IXFH13N80 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 11 N80 IXFH/IXFM 13 N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 V VGS VGSM Continuous Transient


    Original
    11N80 13N80 PDF

    11n80

    Abstract: No abstract text available
    Text: p V DSS IXTH/IXTM 11N80 800 V IXTH / IXTM 13N80 800 V MegaMOS FET ^D25 DS on 11 A 0.95 Î2 13 A 0.80 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V 'o s s Tj = 25°C to 150°C 800 V V«, Tj = 25°C to 150°C ; Ras = 1 M£i 800 V VGS


    OCR Scan
    11N80 13N80 O-247 O-204 C2-67 PDF

    MOSFET 11N80

    Abstract: 11N80 MOSFET 14n80 ns800 13n80
    Text: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 nixYS H iP e r F E T “ P o w e r M O S F E T IXFU/IXFM IXFH/IXFM IXFH/IXFM IXFH/IXFM N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS Family 11N80 13N80 14N80 15N80 Symbol Test Conditions VDSS VDGR Tj = 25°C to 150°C


    OCR Scan
    11N80 13N80 14N80 15N80 MOSFET 11N80 MOSFET 14n80 ns800 PDF

    Untitled

    Abstract: No abstract text available
    Text: laixYS HiPerFET Power MOSFETs IXFH 13N80 V DSS I 800 V 13 A = 0.80 Q 025 RDS on N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family 68 Symbol Test Conditions V OSS ^ =25°C to150°C 800 V V OCR ^ = 25° C to 150° C; RGS= 1 M il 800 V Vos v GS„


    OCR Scan
    13N80 to150 O-247AD IXFH13N80 PDF

    Untitled

    Abstract: No abstract text available
    Text: □ JLTXYS HHifl æ* 3k. X IXFH 13N80Q IXFT 13N80Q HiPerFET Power MOSFETs Q C lass V DSS = 800 V 13 A ” — 0.70 Q ^D25 R DS on trr < 250 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, LowQ Preliminary data sheet Symbol dv/dt Maximum Ratings


    OCR Scan
    13N80Q O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: nixYS MegaMOS FET IXTH/IXTM 13N80 VDSS = 800 V U =13 A ^D S on = O ' * * ß N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V * DSS Tj =25°Cto150°C 800 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2 800 V VGS v GSM Continuous ±20 V Transient


    OCR Scan
    13N80 Cto150 O-247 O-204 O-204 O-247 C2-60 IXTH13NB0 IXTM13N80 C2-61 PDF

    11n80

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs ixfh/ixfm 11 nso IXFH/IXFM13 N80 Symbol Test Conditions VOSS Tj = 25°C to 150°C Maximum Ratings 800 V Voan Tj = 25°C to 150°C; R as = 1 MQ 800 V VGS V QSM Continuous T ransient ±20 ±30 V V U Tc -. 25 :,C 11N80 13N80 11 13 A


    OCR Scan
    IXFH/IXFM13 11N80 13N80 13N80 O-247 PDF

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


    OCR Scan
    100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS PDF

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


    OCR Scan
    76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B PDF

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan
    5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI PDF

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan
    O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 PDF