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Walsin Technology Corporation HH15N100J500CT CAP CER 10PF 50V C0G/NP0 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	HH15N100J500CT	Cut Tape	23,504		1	1 $0.1 10 $0.023 100 $0.0127 1000 $0.00772 10000 $0.00578	Buy Now
	HH15N100J500CT	Digi-Reel	23,504		1	1 $0.1 10 $0.023 100 $0.0127 1000 $0.00772 10000 $0.00578	Buy Now
	HH15N100J500CT	Reel	10,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.00518	Buy Now
Mouser Electronics	HH15N100J500CT					1 $0.1 10 $0.016 100 $0.01 1000 $0.006 10000 $0.003	Get Quote
Walsin Technology Corporation RF15N100J500CT CAP CER 10PF 50V C0G/NP0 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	RF15N100J500CT	Digi-Reel	15,655		1	1 $0.12 10 $0.064 100 $0.0221 1000 $0.01438 10000 $0.01438	Buy Now
	RF15N100J500CT	Cut Tape	15,655		1	1 $0.12 10 $0.064 100 $0.0221 1000 $0.01438 10000 $0.01438	Buy Now
	RF15N100J500CT	Reel	10,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.01175	Buy Now
Mouser Electronics	RF15N100J500CT		10,267			1 $0.1 10 $0.024 100 $0.014 1000 $0.01 10000 $0.007	Buy Now
TME	RF15N100J500CT				10,000	1 - 10 - 100 - 1000 - 10000 $0.00396	Get Quote
Walsin Technology Corporation MT15N100J500CT CAP CER 10PF 50V C0G/NP0 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MT15N100J500CT	Reel	10,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.00226	Buy Now
Mouser Electronics	MT15N100J500CT		3,720			1 $0.1 10 $0.009 100 $0.005 1000 $0.004 10000 $0.002	Buy Now
Newark ()	MT15N100J500CT	Reel	50,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.004	Buy Now
	MT15N100J500CT	Cut Tape	3,140		10	1 - 10 $0.043 100 $0.015 1000 $0.007 10000 $0.007	Buy Now
TME	MT15N100J500CT		2,000		1,000	1 - 10 - 100 - 1000 $0.00207 10000 $0.00207	Buy Now
Littelfuse Inc IXFR15N100Q3 MOSFET N-CH 1000V 10A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR15N100Q3	Tube	300		1	1 $20.74 10 $20.74 100 $13.75967 1000 $13.10233 10000 $13.10233	Buy Now
Newark	IXFR15N100Q3	Bulk			300	1 - 10 - 100 - 1000 $13.74 10000 $13.74	Buy Now
RS	IXFR15N100Q3	Bulk		8 Weeks	300	1 - 10 - 100 - 1000 $19.26 10000 $18.65	Get Quote
Littelfuse Inc IXFH15N100Q3 MOSFET N-CH 1000V 15A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH15N100Q3	Tube	260		1	1 $18.15 10 $18.15 100 $11.30533 1000 $9.97567 10000 $9.97567	Buy Now
RS	IXFH15N100Q3	Bulk		8 Weeks	300	1 - 10 - 100 - 1000 $14.66 10000 $14.2	Get Quote

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15N100 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Advanced Technical Information IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat tfi(typ) =1000 V = 30 A = 3.8 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000	Original	15N100C O-220AB O-263	PDF
15N100C Abstract: 15n10 TO-263AA IXGp 15N100C TO-220 footprint Contextual Info: IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C	Original	15N100C O-220AB O-263 728B1 15N100C 15n10 TO-263AA IXGp 15N100C TO-220 footprint	PDF
15n10 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	15N100Q 15N100Q O-247 O-268 O-268AA 15n10	PDF
Contextual Info: IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol VCES IC25 VCE sat tfi(typ) Test Conditions =1000 V = 30 A = 3.5 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM	Original	15N100C O-220AB O-263 728B1	PDF
15N100Q Abstract: 15n10 15N100 IXFH15N100Q Contextual Info: HiPerFETTM Power MOSFETs VDSS = ID25 = RDS on = IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Preliminary data sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	15N100Q O-247 15N100Q 15n10 15N100 IXFH15N100Q	PDF
15n10 Abstract: 15N100C 15N100 Contextual Info: Advanced Technical Information IXGA 15N100C IXGP 15N100C IGBT Lightspeed Series VCES IC25 VCE sat = = = = tfi(typ) 1000 V 30 A 3.5 V 115 ns TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15N100C O-220AB O-263 15n10 15N100C 15N100	PDF
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	15N100Q 15N100Q O-247 O-268 O-268AA	PDF
Contextual Info: Advanced Technical Information IXGA 15N100C IXGP 15N100C IGBT Lightspeed Series VCES IC25 VCE sat = = = = tfi(typ) 1000 V 30 A 3.5 V 115 ns TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15N100C 15N100C O-220AB O-263	PDF
Contextual Info: Advanced Technical Information IXGH 15N100C IXGT 15N100C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	15N100C 15N100C O-268 O-247 O-268AA	PDF
15N100 Abstract: IXTN 79 N 20 IXTN15N100 Contextual Info: MegaMOSTMFET IXTN 15N100 VDSS = 1000 V = 15 A = 0.6 Ω ID25 RDS on N-Channel Enhancement Mode KS Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 10 kΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	15N100 OT-227 15N100 IXTN 79 N 20 IXTN15N100	PDF
Contextual Info: Advanced Technical Information IXGH 15N100C IXGT 15N100C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	15N100C 15N100C O-268 O-247 O-268AA	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class 1000 V 15 A 0.7 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt TO-247 AD IXFH Preliminary data sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	15N100Q O-247	PDF
15N100 Contextual Info: PIXYS : MegaMOS FET IXTN 15N100 V DSS ID25 1000 V 15 A D 0.6 Q DS on N-Channel Enhancement Mode Symbol Test Conditions v Tj =25°Cto150°C 1000 V v DGB T, =25°C to 150° C; RGS= 10k£2 1000 V VGS VGSM Continuous ¿20 V Transient d30 V Us Tc =25°C 15 A	OCR Scan	15N100 OT-227 Cto150 C2-90 C2-91 15N100	PDF
15n10 Abstract: 15N100 15N100Q IXFH15N100Q Contextual Info: HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class VDSS = ID25 = RDS on = trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Preliminary data sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	15N100Q O-247 15n10 15N100 15N100Q IXFH15N100Q	PDF

1SN10 Contextual Info: IXYS 15N100 VD S S MegaMOS FET = 1000 V = 15 A D 25 R D S on N-Channel Enhancement Mode = 0.6 Q OD G I s Sym bol Test Conditions ''- P ' ¿s Maximum Ratings V DSS T j = 2 5°C to 150°C 1000 V v OGR T j = 2 5°C to 150°C; R GS = 10 k£l 1000 V V Gs	OCR Scan	IXTN15N100 OT-227 E1S3432 C2-98 15N100 C2-99 1SN10	PDF
Contextual Info: VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14N100 IXFH/IXFT/15N100 p ^D25 DS on 1000 V 14 A 0.75 Q 1000 V 15 A 0.70 ß trr <200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data sheet Symbol Test Conditions v TJ Maximum Ratings	OCR Scan	IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 14N100 15N100 O-247 to150	PDF
D1488 Abstract: TO-247 AD Contextual Info: □ IX Y S VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14 N100 IXFH/IXFT/IXFX15 N100 N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family D ^D25 1000 V 14 A 1000 V 15 A trr < 200 ns D S o n 0.75 Q 0.70 Q Preliminary data sheet Maximum Ratings	OCR Scan	IXFH/IXFT/IXFX14 IXFH/IXFT/IXFX15 10TransientThermallmpedance D1488 TO-247 AD	PDF
15N100 Abstract: 15n10 14N100 Contextual Info: OIXYS HiPerFET Power MOSFETs D ^D S S IXFH/IXFT/IXFX14N100 IXFH/IXFT/15N100 N-Channel Enhancement Mode High dv/dt, Lowtrr, HDMOS™ Family ^D25 DS on n 1000 V 14 A 0.75 Q 1000 V 15 A 0.7 trr < 200 ns Preliminary data m m m ÊSm Symbol Test Conditions	OCR Scan	IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 14N100 15N100 15N100 O-247 247TM 15n10	PDF
15N100 Contextual Info: VDSS HiPerFET Power MOSFETs p ^D25 DS on 1000 V 14 A 0.75 Ü 1000V 15 A 0.7 Q trr < 200 ns ix f h / i x f x i 4 n io o IXFH/IXFX15 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data Symbol Test Conditions Maximum Ratings	OCR Scan	IXFH/IXFX15 14N100 15N100 K30Ts	PDF
75N1 Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B Contextual Info: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH	OCR Scan	76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B	PDF
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI	PDF
ixys ixfn 55n50 Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 Contextual Info: i , i - •.• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ \| Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01	OCR Scan	O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60	PDF
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158	PDF
ixtn15n100 Contextual Info: MegaMOS FET 15N100 v ¥ dss ^D25 P DS on = 1000 V = 15 A = 0.6 Q N-Channel Enhancement Mode 6s Symbol Maximum Ratings Test Conditions V DSS Tj = 25°C to 150°C 1000 V vDGH Tj = 25°C to 150°C; RGS = 10 kD 1000 V vas Continuous ±20 V V GSM Transient	OCR Scan	IXTN15N100 OT-227 000E21D ixtn15n100	PDF

15N100 Search Results

15N100 Price and Stock

Walsin Technology Corporation HH15N100J500CT

Walsin Technology Corporation RF15N100J500CT

Walsin Technology Corporation MT15N100J500CT

Littelfuse Inc IXFR15N100Q3

Littelfuse Inc IXFH15N100Q3

15N100 Datasheets Context Search

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D1488

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40n80

ixys ixfn 55n50

C1162

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