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    170N10 Search Results

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    170N10 Price and Stock

    Infineon Technologies AG IAUA170N10S5N031AUMA1

    MOSFET_(75V 120V( PG-HSOF-5
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    DigiKey IAUA170N10S5N031AUMA1 Digi-Reel 1,584 1
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    IAUA170N10S5N031AUMA1 Cut Tape 1,584 1
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    IAUA170N10S5N031AUMA1 Reel 2,000
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    Mouser Electronics IAUA170N10S5N031AUMA1 1,566
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    Newark IAUA170N10S5N031AUMA1 Cut Tape 1
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    Rochester Electronics IAUA170N10S5N031AUMA1 2,969 1
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    EBV Elektronik IAUA170N10S5N031AUMA1 27 Weeks 2,000
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    Littelfuse Inc IXTT170N10P

    MOSFET N-CH 100V 170A TO268
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    DigiKey IXTT170N10P Tube 253 1
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    Littelfuse Inc IXTQ170N10P

    MOSFET N-CH 100V 170A TO3P
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    DigiKey IXTQ170N10P Tube 240 1
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    Newark IXTQ170N10P Bulk 300
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    Littelfuse Inc IXFH170N10P

    MOSFET N-CH 100V 170A TO247AD
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    DigiKey IXFH170N10P Tube 85 1
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    RS IXFH170N10P Bulk 8 Weeks 30
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    New Advantage Corporation IXFH170N10P 210 1
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    IXYS Corporation IXFK170N10

    MOSFET N-CH 100V 170A TO-264AA
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    DigiKey IXFK170N10 Tube 25
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    Mouser Electronics IXFK170N10
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    New Advantage Corporation IXFK170N10 4 1
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    Find more 170N10 price and stock on Findchips.com

    170N10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFH 170N10P IXFK 170N10P PolarHTTM HiPerFET Power MOSFET VDSS ID25 = = = RDS on 100 V 170 A Ω 9.0 mΩ N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		170N10P O-247 405B2 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET Power MOSFET IXFH 170N10P IXFK 170N10P VDSS = 100 V ID25 = 170 A Ω RDS on ≤ 9.0 mΩ ≤ 150 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C


    Original     		170N10P PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET 170N10 170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR TJ = 25°C to 150°C


    Original     		200ns 200ns IXFN170N10 IXFK170N10 O-264 170N10 ID125 OT-227 E153432 PDF

    IXFN170N10

    Abstract: 170N10 125OC IXFK170N10
    Text: HiPerFETTM Power MOSFET 170N10 170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C


    Original     		IXFN170N10 IXFK170N10 200ns O-264 170N10 ID125 Figure10. IXFN170N10 170N10 125OC IXFK170N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET 170N10 170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C


    Original     		IXFN170N10 IXFK170N10 200ns O-264 170N10 ID125Â Figure10. PDF

    170N10P

    Abstract: No abstract text available
    Text: IXTK 170N10P IXTQ 170N10P IXTT 170N10P PolarHTTM Power MOSFET VDSS ID25 = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated 100 170 9.0 TO-264 (IXTK) Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100


    Original     		170N10P O-264 170N10P PDF

    170N10P

    Abstract: No abstract text available
    Text: IXTQ 170N10P IXTT 170N10P IXTK 170N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = = 100 V 170 A Ω 9.0 mΩ N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		170N10P O-268 405B2 170N10P PDF

    BHRH

    Abstract: SOT-227 Package IXFK170N10 IXFN170N10 "SOT-227 B" dimensions 125OC 170N10 D125
    Text: ADVANCE INFORMATION HiPerFETTM Power MOSFET VDSS 170N10 170N10 10mΩ 10mΩ trr 200ns 200ns TO-264 AA IXFK Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 V DSS V DGR TJ = 25°C to 150°C TJ = 25°C to 150°C 100 100 100 100 V V V GS V GSM


    Original     		IXFN170N10 IXFK170N10 200ns O-264 170N10 BHRH SOT-227 Package IXFK170N10 IXFN170N10 "SOT-227 B" dimensions 125OC 170N10 D125 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXTQ 170N10P IXTT 170N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = = 100 V 170 A Ω 9.0 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		170N10P 170N10P O-268 065B1 728B1 123B1 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158 PDF

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 PDF

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 PDF

    170L1013

    Abstract: 170N20 170N1008 170L2218 170N1111 170N2108 170L2117 170N1006 170N1107 170N2113
    Text: Ferrule-FWP High Speed FWP Fuse 690V-700V IEC/UL Ferrule High Speed Fuses With Striker Provide Visual and Remote Fuse Status Indication RoHS Compliant Very High Breaking Capacity Excellent Cycling Capability & DC Performance Low Arc Voltage & Low Let-Through Energy


    Original     		90V-700V CH221D CH221DMS CH221DNX CH221DN CH222D CH223D CH223DMS CH223DN CH223DNMS 170L1013 170N20 170N1008 170L2218 170N1111 170N2108 170L2117 170N1006 170N1107 170N2113 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 PDF

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP PDF

    D2562

    Abstract: EE-SS3
    Text: HiPerFET Power MOSFET 170N10 170N10 vDSS Joîs R 100V 100V 170A 170A 10mQ 10mQ DS on 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Symbol Maximum Ratings IXFK IXFN 170N10 170N10 Test Conditions V V DGfi Ü) Tj = 25°C to 150°C TJ = 25°C to 150°C


    OCR Scan     		IXFN170N10 IXFK170N10 200ns 200ns O-264 170N10 OT-227 D2562 EE-SS3 PDF

    170n10

    Abstract: vestas 185H10 197-IX
    Text: ADVANCE INFORMATION v DSS H iP e rF E T Pow er M O SFET 100V 100V 100V IXFK 170N10 100V Single MOSFET Die D ^D 25 185A 170A 185A 170A 1* D S o n 8m£2 10mi2 8mn 10mß 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol v DSS Test Conditions T j = 25°C to 150°C


    OCR Scan     		185N10 200ns 170N10 200ns 185H10 170H10 vestas 197-IX PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS ADVANCE INFORMATION ^D25 100V 100V 170A 170A trr DS on a a 170N10 170N10 D v DSS E E o o HiPerFET Power MOSFET 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Symbol v Maximum Ratings IXFK IXFN 170N10 170N10 Test Conditions Td = 25°C to 150°C


    OCR Scan     		IXFN170N10 IXFK170N10 200ns O-264 170N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S HiPerFET Power MOSFET IXFN 170N10 170N10 VDSS ^D25 100 V 100 V 170 A 170 A p DS on 10 mQ 10 mil Single M O S FE T Die Symbol Test Conditions VDSS v TCB Tj Tj VGS v GSM Continuous Transient Us ® u ® Ur Tc Tc Tc Tc Maximum Ratings IXFK IXFN


    OCR Scan     		IXFN170N10 IXFK170N10 O-264 OT-227 IXFN170N10 100ms PDF

    131-G W J 60

    Abstract: 131-G W J 59 170N10
    Text: HiPerFET Power MOSFET IXFN 170N 10 IX F K 170N 10 Test Conditions V DSS T, T, Ï V oo„ Vcs V GSM I ^DM “ = Maximum Ratings IXFN IXFK 25°C to 150°C 25 °C to 1 5 0 ”C Continuous Transient T_ T„ T„ Tc = = = = 25°C 125"C 25°C 253C E* Tc = 25°C


    OCR Scan     		IXFN170N10 IXFK170N10 O-264 OT-227 131-G W J 60 131-G W J 59 170N10 PDF

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 PDF

    52N30

    Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
    Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70


    OCR Scan     		76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50 PDF