Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat tfi(typ) =1000 V = 30 A = 3.8 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000
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15N100C
O-220AB
O-263
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15N100C
Abstract: 15n10 TO-263AA IXGp 15N100C TO-220 footprint
Text: IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C
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15N100C
O-220AB
O-263
728B1
15N100C
15n10
TO-263AA
IXGp 15N100C
TO-220 footprint
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15n10
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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15N100Q
15N100Q
O-247
O-268
O-268AA
15n10
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Untitled
Abstract: No abstract text available
Text: IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol VCES IC25 VCE sat tfi(typ) Test Conditions =1000 V = 30 A = 3.5 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM
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15N100C
O-220AB
O-263
728B1
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15N100Q
Abstract: 15n10 15N100 IXFH15N100Q
Text: HiPerFETTM Power MOSFETs VDSS = ID25 = RDS on = IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Preliminary data sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C
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15N100Q
O-247
15N100Q
15n10
15N100
IXFH15N100Q
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15n10
Abstract: 15N100C 15N100
Text: Advanced Technical Information IXGA 15N100C IXGP 15N100C IGBT Lightspeed Series VCES IC25 VCE sat = = = = tfi(typ) 1000 V 30 A 3.5 V 115 ns TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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15N100C
O-220AB
O-263
15n10
15N100C
15N100
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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15N100Q
15N100Q
O-247
O-268
O-268AA
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXGA 15N100C IXGP 15N100C IGBT Lightspeed Series VCES IC25 VCE sat = = = = tfi(typ) 1000 V 30 A 3.5 V 115 ns TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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15N100C
15N100C
O-220AB
O-263
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXGH 15N100C IXGT 15N100C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C
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15N100C
15N100C
O-268
O-247
O-268AA
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15N100
Abstract: IXTN 79 N 20 IXTN15N100
Text: MegaMOSTMFET IXTN 15N100 VDSS = 1000 V = 15 A = 0.6 Ω ID25 RDS on N-Channel Enhancement Mode KS Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 10 kΩ 1000 V VGS Continuous ±20 V VGSM Transient
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15N100
OT-227
15N100
IXTN 79 N 20
IXTN15N100
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXGH 15N100C IXGT 15N100C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C
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15N100C
15N100C
O-268
O-247
O-268AA
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class 1000 V 15 A 0.7 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt TO-247 AD IXFH Preliminary data sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C
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15N100Q
O-247
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15n10
Abstract: 15N100 15N100Q IXFH15N100Q
Text: HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class VDSS = ID25 = RDS on = trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Preliminary data sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C
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15N100Q
O-247
15n10
15N100
15N100Q
IXFH15N100Q
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15N100
Abstract: IXFH15N100 IXFH14N100 14N100 IXFT14N100 N100 CASE OUTLINE 55 BT- Style 1
Text: VDSS HiPerFETTM Power MOSFETs IXFH/IXFT/IXFX14 N100 IXFH/IXFT/IXFX15 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 RDS on 1000 V 14 A 0.75 W 1000 V 15 A 0.70 W trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings
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IXFH/IXFT/IXFX14
IXFH/IXFT/IXFX15
14N100
15N100
15N100
IXFH15N100
IXFH14N100
14N100
IXFT14N100
N100
CASE OUTLINE 55 BT- Style 1
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SSD15N10
Abstract: MosFET 15N10
Text: 15N10 15A, 100V, RDS ON 110mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The 15N10 provide the designer with the best combination of fast switching. The TO-252 package is
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SSD15N10
O-252
SSD15N10
15N10
07-Mar-2013
MosFET
15N10
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AS85049/31, MS3416 and MIL-DTL-85723/15N
Abstract: No abstract text available
Text: AS85049 AS85049/31, MS3416 and MIL-DTL-85723/15N Self-Locking and Non-Self-Locking E-Nut Finish A = Anodize, Black N = Electroless Nickel W = 1,000 Hour Cadmium Olive Drab over Electroless Nickel X = Nickel Fluorocarbon Polymer Y = Pure Dense Electrodeposited
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AS85049
AS85049/31,
MS3416
MIL-DTL-85723/15N
AS50151
AS34001
MIL-DTL-26482
AS81703
MIL-DTL-83723
AS85049/31, MS3416 and MIL-DTL-85723/15N
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15N100
Abstract: No abstract text available
Text: PIXYS : MegaMOS FET IXTN 15N100 V DSS ID25 1000 V 15 A D 0.6 Q DS on N-Channel Enhancement Mode Symbol Test Conditions v Tj =25°Cto150°C 1000 V v DGB T, =25°C to 150° C; RGS= 10k£2 1000 V VGS VGSM Continuous ¿20 V Transient d30 V Us Tc =25°C 15 A
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15N100
OT-227
Cto150
C2-90
C2-91
15N100
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1SN10
Abstract: No abstract text available
Text: IXYS 15N100 VD S S MegaMOS FET = 1000 V = 15 A D 25 R D S on N-Channel Enhancement Mode = 0.6 Q OD G I s Sym bol Test Conditions ''- P ' ¿s Maximum Ratings V DSS T j = 2 5°C to 150°C 1000 V v OGR T j = 2 5°C to 150°C; R GS = 10 k£l 1000 V V Gs
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IXTN15N100
OT-227
E1S3432
C2-98
15N100
C2-99
1SN10
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Untitled
Abstract: No abstract text available
Text: VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14N100 IXFH/IXFT/15N100 p ^D25 DS on 1000 V 14 A 0.75 Q 1000 V 15 A 0.70 ß trr <200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data sheet Symbol Test Conditions v TJ Maximum Ratings
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IXFH/IXFT/IXFX14N100
IXFH/IXFT/IXFX15N100
14N100
15N100
O-247
to150
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D1488
Abstract: TO-247 AD
Text: □ IX Y S VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14 N100 IXFH/IXFT/IXFX15 N100 N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family D ^D25 1000 V 14 A 1000 V 15 A trr < 200 ns D S o n 0.75 Q 0.70 Q Preliminary data sheet Maximum Ratings
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IXFH/IXFT/IXFX14
IXFH/IXFT/IXFX15
10TransientThermallmpedance
D1488
TO-247 AD
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Untitled
Abstract: No abstract text available
Text: TOKO AMERICA INC FMK S^E ]> m ? b 3 2 0002533 T2 2 • TAI TOKO Series DC-DC Converters ■ OVERVIEW TOKO’s engineers designed these converter modules with primary emphasis on small size, lightweight and low cost. Conversion efficiencies of up to 75%. These non-floating type converters were developed for
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TDb7b32
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15N100
Abstract: 15n10 14N100
Text: OIXYS HiPerFET Power MOSFETs D ^D S S IXFH/IXFT/IXFX14N100 IXFH/IXFT/15N100 N-Channel Enhancement Mode High dv/dt, Lowtrr, HDMOS™ Family ^D25 DS on n 1000 V 14 A 0.75 Q 1000 V 15 A 0.7 trr < 200 ns Preliminary data m m m ÊSm Symbol Test Conditions
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IXFH/IXFT/IXFX14N100
IXFH/IXFT/IXFX15N100
14N100
15N100
15N100
O-247
247TM
15n10
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15N100
Abstract: No abstract text available
Text: VDSS HiPerFET Power MOSFETs p ^D25 DS on 1000 V 14 A 0.75 Ü 1000V 15 A 0.7 Q trr < 200 ns ix f h / i x f x i 4 n io o IXFH/IXFX15 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data Symbol Test Conditions Maximum Ratings
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IXFH/IXFX15
14N100
15N100
K30Ts
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75N1
Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH
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76N07-11
76N07-12
67N10
75N10
42N20
50N20
58N20
O-247
O-204
75N1
6n80
IXTM20N60
IRFP 260 M
ixfh
K 15N60
ixtn 44N50
KS 4400
204 3B
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