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    IXTN15N100 Search Results

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    IXTN15N100 Price and Stock

    IXYS Corporation IXTN15N100

    MOSFET N-CH SOT227
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTN15N100 Bulk
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    New Advantage Corporation IXTN15N100 425 1
    • 1 -
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    • 100 $68.51
    • 1000 $63.94
    • 10000 $63.94
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    IXYS Integrated Circuits Division IXTN15N100

    MOSFET MOD.15A 1000V N-CH SOT227B MEGAMOS CHASSIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXTN15N100 525
    • 1 $51.03729
    • 10 $47.6984
    • 100 $47.6984
    • 1000 $47.6984
    • 10000 $47.6984
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    IXTN15N100 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTN15N100 IXYS N-Channel Enhancement-Mode MegaMOS FET Scan PDF
    IXTN15N100 Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IXTN15N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original
    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    BERULUB FR 16 B

    Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
    Text: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power


    Original
    PDF IXBH40N160, BERULUB FR 16 B circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram

    1SN10

    Abstract: No abstract text available
    Text: IXYS IXTN15N100 VD S S MegaMOS FET = 1000 V = 15 A D 25 R D S on N-Channel Enhancement Mode = 0.6 Q OD G I s Sym bol Test Conditions ''- P ' ¿s Maximum Ratings V DSS T j = 2 5°C to 150°C 1000 V v OGR T j = 2 5°C to 150°C; R GS = 10 k£l 1000 V V Gs


    OCR Scan
    PDF IXTN15N100 OT-227 E1S3432 C2-98 15N100 C2-99 1SN10

    ixtn15n100

    Abstract: No abstract text available
    Text: MegaMOS FET IXTN15N100 v ¥ dss ^D25 P DS on = 1000 V = 15 A = 0.6 Q N-Channel Enhancement Mode 6s Symbol Maximum Ratings Test Conditions V DSS Tj = 25°C to 150°C 1000 V vDGH Tj = 25°C to 150°C; RGS = 10 kD 1000 V vas Continuous ±20 V V GSM Transient


    OCR Scan
    PDF IXTN15N100 OT-227 000E21D ixtn15n100

    IXTN15N100

    Abstract: f g megamos 15N100
    Text: MegaMOS FET IXTN15N100 V DSS ^D25 P DS on = 1000 V = 15 A = 0 .6 Q N-Channel Enhancement Mode ?D G r Ks OS Maximum Ratings Symbol Test Conditions V OSB Tj = 25°C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 10 kQ 1000 V v GS Continuous +20 V V GSM


    OCR Scan
    PDF IXTN15N100 OT-227 4bflb22b Q00221D f g megamos 15N100

    15N100

    Abstract: No abstract text available
    Text: PIXYS : MegaMOS FET IXTN 15N100 V DSS ID25 1000 V 15 A D 0.6 Q DS on N-Channel Enhancement Mode Symbol Test Conditions v Tj =25°Cto150°C 1000 V v DGB T, =25°C to 150° C; RGS= 10k£2 1000 V VGS VGSM Continuous ¿20 V Transient d30 V Us Tc =25°C 15 A


    OCR Scan
    PDF 15N100 OT-227 Cto150 C2-90 C2-91 15N100