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    170N10P Search Results

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    170N10P Price and Stock

    Littelfuse Inc IXTT170N10P

    MOSFET N-CH 100V 170A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTT170N10P Tube 253 1
    • 1 $12.03
    • 10 $12.03
    • 100 $7.69167
    • 1000 $12.03
    • 10000 $12.03
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    Littelfuse Inc IXTQ170N10P

    MOSFET N-CH 100V 170A TO3P
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    DigiKey IXTQ170N10P Tube 240 1
    • 1 $11
    • 10 $11
    • 100 $6.98633
    • 1000 $11
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    Newark IXTQ170N10P Bulk 300
    • 1 -
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    • 100 -
    • 1000 $6.54
    • 10000 $6.54
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    Littelfuse Inc IXFH170N10P

    MOSFET N-CH 100V 170A TO247AD
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    DigiKey IXFH170N10P Tube 85 1
    • 1 $12.23
    • 10 $12.23
    • 100 $7.83167
    • 1000 $12.23
    • 10000 $12.23
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    RS IXFH170N10P Bulk 8 Weeks 30
    • 1 -
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    • 100 $11.02
    • 1000 $11.02
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    New Advantage Corporation IXFH170N10P 210 1
    • 1 -
    • 10 -
    • 100 $10.13
    • 1000 $9.45
    • 10000 $9.45
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    Littelfuse Inc IXTK170N10P

    MOSFET N-CH 100V 170A TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTK170N10P Tube 300
    • 1 -
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    • 100 -
    • 1000 $6.86763
    • 10000 $6.86763
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    Newark IXTK170N10P Bulk 300
    • 1 -
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    • 100 -
    • 1000 $7.2
    • 10000 $7.2
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    Littelfuse Inc IXFK170N10P

    MOSFET N-CH 100V 170A TO264AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFK170N10P Tube 300
    • 1 -
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    • 100 -
    • 1000 $7.64927
    • 10000 $7.64927
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    Newark IXFK170N10P Bulk 300
    • 1 -
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    • 100 -
    • 1000 $8.02
    • 10000 $8.02
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    RS IXFK170N10P Bulk 8 Weeks 25
    • 1 -
    • 10 -
    • 100 $11.83
    • 1000 $11.83
    • 10000 $11.83
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    Find more 170N10P price and stock on Findchips.com

    170N10P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFH 170N10P IXFK 170N10P PolarHTTM HiPerFET Power MOSFET VDSS ID25 = = = RDS on 100 V 170 A Ω 9.0 mΩ N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		170N10P O-247 405B2 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET Power MOSFET IXFH 170N10P IXFK 170N10P VDSS = 100 V ID25 = 170 A Ω RDS on ≤ 9.0 mΩ ≤ 150 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C


    Original     		170N10P PDF

    170N10P

    Abstract: No abstract text available
    Text: IXTK 170N10P IXTQ 170N10P IXTT 170N10P PolarHTTM Power MOSFET VDSS ID25 = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated 100 170 9.0 TO-264 (IXTK) Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100


    Original     		170N10P O-264 170N10P PDF

    170N10P

    Abstract: No abstract text available
    Text: IXTQ 170N10P IXTT 170N10P IXTK 170N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = = 100 V 170 A Ω 9.0 mΩ N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		170N10P O-268 405B2 170N10P PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXTQ 170N10P IXTT 170N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = = 100 V 170 A Ω 9.0 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		170N10P 170N10P O-268 065B1 728B1 123B1 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP PDF