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IXYS Corporation IXFK170N10 MOSFET N-CH 100V 170A TO-264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK170N10	Tube			25	1 - 10 - 100 $15.4868 1000 $15.4868 10000 $15.4868	Buy Now
Mouser Electronics	IXFK170N10					1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	IXFK170N10		4		1	1 - 10 $99.34 100 $99.34 1000 $99.34 10000 $99.34	Buy Now
Littelfuse Inc IXFK170N10P MOSFET N-CH 100V 170A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK170N10P	Tube			300	1 - 10 - 100 - 1000 $7.64927 10000 $7.64927	Buy Now
Newark	IXFK170N10P	Bulk			300	1 - 10 - 100 - 1000 $8.02 10000 $8.02	Buy Now
RS	IXFK170N10P	Bulk		8 Weeks	25	1 - 10 - 100 $11.83 1000 $11.83 10000 $11.83	Get Quote
IXYS Corporation IXFK170N10P MOSFETs PolarHT HiperFET 100v, 170A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFK170N10P		345			1 $12.97 10 $11.43 100 $9.88 1000 $8.96 10000 $8.96	Buy Now
TTI	IXFK170N10P	Tube			300	1 - 10 - 100 - 1000 $7.65 10000 $7.65	Buy Now
TME	IXFK170N10P		39		1	1 $12.91 10 $10.28 100 $9.24 1000 $9.24 10000 $9.24	Buy Now
New Advantage Corporation	IXFK170N10P		18		1	1 - 10 - 100 $18.86 1000 $18.86 10000 $18.86	Buy Now
IXYS Integrated Circuits Division IXFK170N10P MOSFET DIS.170A 100V N-CH TO264 HIPERFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXFK170N10P		23			1 $13.99464 10 $13.99464 100 $13.0791 1000 $13.0791 10000 $13.0791	Buy Now
IXYS Integrated Circuits Division IXFK170N10 MOSFET DIS.170A 100V N-CH TO264 HIPERFET THT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXFK170N10		5			1 $73.71968 10 $73.71968 100 $68.8969 1000 $68.8969 10000 $68.8969	Buy Now

IXFK170N10 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFK170N10		IXYS	100V HiPerFET power MOSFET		Original	PDF
IXFK170N10P		IXYS	PolarHT HiPerFET Power MOSFET		Original	PDF

IXFK170N10 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR TJ = 25°C to 150°C	Original	200ns 200ns IXFN170N10 IXFK170N10 O-264 170N10 ID125 OT-227 E153432	PDF
IXFN170N10 Abstract: 170N10 125OC IXFK170N10 Text: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C	Original	IXFN170N10 IXFK170N10 200ns O-264 170N10 ID125 Figure10. IXFN170N10 170N10 125OC IXFK170N10	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C	Original	IXFN170N10 IXFK170N10 200ns O-264 170N10 ID125Â Figure10.	PDF
IXFH170N10P Abstract: IXFK170N10P 01-07-10-C Text: IXFH170N10P IXFK170N10P PolarTM HiperFETTM Power MOSFET VDSS ID25 = 100V = 170A Ω ≤ 9mΩ ≤ 150ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25°C to 175°C Maximum Ratings	Original	IXFH170N10P IXFK170N10P 150ns O-247 170N10P 01-07-10-C IXFH170N10P IXFK170N10P 01-07-10-C	PDF
BHRH Abstract: SOT-227 Package IXFK170N10 IXFN170N10 "SOT-227 B" dimensions 125OC 170N10 D125 Text: ADVANCE INFORMATION HiPerFETTM Power MOSFET VDSS IXFN170N10 IXFK170N10 10mΩ 10mΩ trr 200ns 200ns TO-264 AA IXFK Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 V DSS V DGR TJ = 25°C to 150°C TJ = 25°C to 150°C 100 100 100 100 V V V GS V GSM	Original	IXFN170N10 IXFK170N10 200ns O-264 170N10 BHRH SOT-227 Package IXFK170N10 IXFN170N10 "SOT-227 B" dimensions 125OC 170N10 D125	PDF
Untitled Abstract: No abstract text available Text: PolarTM HiperFETTM Power MOSFET VDSS ID25 IXFH170N10P IXFK170N10P = 100V = 170A Ω ≤ 9mΩ ≤ 150ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25°C to 175°C Maximum Ratings	Original	IXFH170N10P IXFK170N10P 150ns O-247 170N10P 01-07-10-C	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
IXFD75N10 Abstract: IXFD180N07-9X IXFD340N07-9Y Text: Insulated Gate Bipolar Transistors IGBT-Chips "S" series with improved SCSOA capability Type VCES VCE sat @ IC Cies typ. Chip type pF tfi typ. 25°C ns V V A 2 20 1800 500 IX4X 5.65 x 4.70 222 x 185 15 mil x 1 IXSH24N60 11 High Speed Low VCE(sat) TJM = 150°C	Original	IXFH76N07-12 IXFX180N10 IXFN340N07 IXFX15N8085 IXFH67N10 IXFH75N10 IXFH75N10Q IXFH80N10Q IXFK170N10 IXFN230N10 IXFD75N10 IXFD180N07-9X IXFD340N07-9Y	PDF
IXFd50n20 Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type	Original		PDF
IXFD21N100F-8F Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50 Text: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005	Original	IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD180N085-9X IXFD280N085-9Y IXFD75N10-7X IXFD80N10Q-8X IXFD170N10-9X IXFD230N10-9Y IXFD70N15-7X IXFD21N100F-8F IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50	PDF
D2562 Abstract: EE-SS3 Text: HiPerFET Power MOSFET IXFN170N10 IXFK170N10 vDSS Joîs R 100V 100V 170A 170A 10mQ 10mQ DS on 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Symbol Maximum Ratings IXFK IXFN 170N10 170N10 Test Conditions V V DGfi Ü) Tj = 25°C to 150°C TJ = 25°C to 150°C	OCR Scan	IXFN170N10 IXFK170N10 200ns 200ns O-264 170N10 OT-227 D2562 EE-SS3	PDF
Untitled Abstract: No abstract text available Text: □ IXYS ADVANCE INFORMATION ^D25 100V 100V 170A 170A trr DS on a a IXFN170N10 IXFK170N10 D v DSS E E o o HiPerFET Power MOSFET 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Symbol v Maximum Ratings IXFK IXFN 170N10 170N10 Test Conditions Td = 25°C to 150°C	OCR Scan	IXFN170N10 IXFK170N10 200ns O-264 170N10	PDF
Untitled Abstract: No abstract text available Text: n ix Y S HiPerFET Power MOSFET IXFN 170N10 IXFK170N10 VDSS ^D25 100 V 100 V 170 A 170 A p DS on 10 mQ 10 mil Single M O S FE T Die Symbol Test Conditions VDSS v TCB Tj Tj VGS v GSM Continuous Transient Us ® u ® Ur Tc Tc Tc Tc Maximum Ratings IXFK IXFN	OCR Scan	IXFN170N10 IXFK170N10 O-264 OT-227 IXFN170N10 100ms	PDF

POWER MOSFET 4600 Abstract: MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90 Text: HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode B Type " dbmm e«» m ax. m ax. m ax. Chip typ * Chip sue cHmehsfons Tm = 150°C V Q A 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.012 0.006 0.004 IXFD67N10-7X XFD75N10-7X	OCR Scan	1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD67N10-7X XFD75N10-7X IXFD75N10Q-7X XFD80N100-8X XFD170N10-9X XFD230N10-9Y IXFD70N15-7X POWER MOSFET 4600 MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90	PDF

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IXFK170N10 Price and Stock

IXYS Corporation IXFK170N10

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IXYS Integrated Circuits Division IXFK170N10

IXFK170N10 Datasheets (2)

IXFK170N10 Datasheets Context Search

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IXFN170N10

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IXFH170N10P

BHRH

Untitled

IXTD08N100P-1A

IRF1830G

IXFD75N10

IXFd50n20

IXFD21N100F-8F

D2562

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POWER MOSFET 4600