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    9N80 Search Results

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    9N80 Price and Stock

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    STMicroelectronics STFI9N80K5

    MOSFET N-CH 800V 7A I2PAKFP
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    DigiKey STFI9N80K5 Tube 1,465 1
    • 1 $3.05
    • 10 $3.05
    • 100 $1.3698
    • 1000 $1.02502
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    EBV Elektronik STFI9N80K5 143 Weeks 50
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    STMicroelectronics STW9N80K5

    MOSFET N-CHANNEL 800V 7A TO247
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    DigiKey STW9N80K5 Tube 415 1
    • 1 $3.88
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    • 100 $2.15233
    • 1000 $1.66741
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    Avnet Americas STW9N80K5 Bulk 16 Weeks 600
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    Mouser Electronics STW9N80K5 395
    • 1 $3.89
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    STMicroelectronics STW9N80K5 395 1
    • 1 $3.81
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    TME STW9N80K5 1
    • 1 $2.84
    • 10 $2.26
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    Avnet Silica STW9N80K5 17 Weeks 30
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    EBV Elektronik STW9N80K5 17 Weeks 30
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    STMicroelectronics STF9N80K5

    MOSFET N-CH 800V 7A TO220FP
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    DigiKey STF9N80K5 Tube 1
    • 1 $3.31
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    • 100 $1.499
    • 1000 $1.12773
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    Avnet Americas STF9N80K5 Tube 14 Weeks 1,000
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    • 10000 $0.99821
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    Mouser Electronics STF9N80K5
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    Avnet Silica STF9N80K5 15 Weeks 50
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    EBV Elektronik STF9N80K5 15 Weeks 50
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    IXYS Corporation IXFH9N80Q

    MOSFET N-CH 800V 9A TO247AD
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    DigiKey IXFH9N80Q Tube 30
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    STMicroelectronics STP9N80K5

    MOSFET N-CHANNEL 800V 7A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STP9N80K5 Tube 1,000
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    • 1000 $1.1832
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    Mouser Electronics STP9N80K5 535
    • 1 $2.88
    • 10 $2.21
    • 100 $1.76
    • 1000 $1.17
    • 10000 $1.15
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    STMicroelectronics STP9N80K5 535 1
    • 1 $2.82
    • 10 $2.17
    • 100 $1.73
    • 1000 $1.45
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    Avnet Silica STP9N80K5 15 Weeks 50
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    EBV Elektronik STP9N80K5 15 Weeks 50
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    Find more 9N80 price and stock on Findchips.com

    9N80 Datasheets Context Search

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    PDF

    UC 493

    Abstract: 9N80
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N80 Preliminary Power MOSFET 9A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a


    Original     		O-220 O-220F1 QW-R502-493 UC 493 9N80 PDF

    9N80

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 9N80Q IXFT 9N80Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C


    Original     		9N80Q 9N80Q O-247 O-268 O-268AA 9N80 PDF

    96527

    Abstract: 9N80 8n80
    Text: OIXYS VDSS HiPerFET Power MOSFETs IXFH 8N80 IXFH 9N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 DS on tr r 800V 8A 1.1Q 250ns 800V 9A 0.9ß 250ns TO-247 AD (IXFH) Preliminary data f D(TAB) Symbol Test Conditions v'DSS T j =25°C to150°C


    OCR Scan     		250ns 250ns O-247 to150 IXFH8N80 96527 9N80 8n80 PDF

    9N80

    Abstract: UC 493
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N80 Power MOSFET 9A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a


    Original     		O-220 O-220F1 O-220F2 QW-R502-493 9N80 UC 493 PDF

    9N80

    Abstract: 8n80 BSC 031 N 06 NS 3 smd U
    Text: HiPerFET Power MOSFETs IXFH 8N80 IXFH 9N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family ^DSS ^D25 800 V 800 V 8A 9A P DS on t rr 1.1 ft 250 ns o.g a 250 ns TO-247 AD (IXFH) Preliminary data D (TAB) Symbol Test Conditions Maximum Ratings


    OCR Scan     		O-247 O-247 5A/25 9N80 8n80 BSC 031 N 06 NS 3 smd U PDF

    TEST35

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class IXFH 9N80Q IXFT 9N80Q VDSS ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V Maximum Ratings


    Original     		9N80Q O-247 O-268 O-268 TEST35 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N80 Power MOSFET 9A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a


    Original     		O-220 O-220F1 O-220F2 QW-R502-493 PDF

    9N80

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N80 Preliminary Power MOSFET 9A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a


    Original     		O-220 O-220F1 O-220F2 QW-R502-493 9N80 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class IXFH 9N80Q IXFT 9N80Q VDSS ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V Maximum Ratings


    Original     		9N80Q O-247 O-268 O-268 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N80 Preliminary Power MOSFET 9 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a


    Original     		O-220 O-220F1 QW-R502-493 PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    9n80

    Abstract: 9N90-T3P-T 9N90 9N90L-T3P-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET „ DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable


    Original     		9N90L 9N90G 9N90-T3P-T 9N90L-T3P-T QW-R502-217 9n80 9N90-T3P-T 9N90 9N90L-T3P-T PDF

    STH9N80FI

    Abstract: STH9N80 wn s
    Text: 0045^07 EGT • S G T H SGS-THOMSON [M gil(Q iyi(§^(ôMûS 9N80 9N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE 9N80 9N80FI ■ ■ . . . ■ . V dss RDS(on) Id 800 V 800 V <1n < 1 £2 9A 5.6 A TYPICAL Rd s m = 0.87 £2 AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		STH9N80 STH9N80FI STH9N80 STH9N80FI STH9N80/FI wn s PDF

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET PDF

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 PDF

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158 PDF

    scr 106d

    Abstract: SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226
    Text: f l ✓ SCR IN METAL PACKAGE TO -3 9 T O - 18 0 ,6 A 15V 2N876 2N884 30V 2N877 2N 8 8 5 0 ,8 A RMS 2N3001 2N3005 TAG 0 ,8 A RMS 06Y BR 203 50V v v DRM RRM B L O C K IN G V O LT A G E 60V 2N878 2N886 2N3002 2N 3006 TAG 0 6 Y Y 100V 2N879 2N 887 2N 3 0 0 3 2N 3007


    OCR Scan     		to-18 2n876 2n884 2n877 2n885 2n3001 2n3005 2nw121 tag520f tag521f scr 106d SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226 PDF

    8N80

    Abstract: 9n80 diode 931 p 7 W8N80 smd diode SM 97 IXFH9N80 IXFH8N80 125OC 08N80 diode A2 9
    Text: Preliminary Data Sheet VDSS HiPerFET Power MOSFETs TM IXFH8N80 800V 9N80 800V ID25 RDS on trr 8A 9A 1.1Ω 0.9Ω 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS


    Original     		IXFH8N80 IXFH9N80 O-247 8N80 9n80 diode 931 p 7 W8N80 smd diode SM 97 125OC 08N80 diode A2 9 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet v HiPerFET Power MOSFETs D DSS 800V 800V N-Channel Enhancement Mode High dv/dt, Lowtrr, HDMOS™ Family ^D25 DS on 8A 9A 1.1Q 0.9 Q. K 250 ns 250 ns ?D G TO-247 AD (IXFH) As Maximum Ratings Symbol Test Conditions V DSS Tj = 25°C to 150°C


    OCR Scan     		O-247 XFH9N80 PDF

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 PDF

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 PDF

    8n80

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH8N80 9N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS ID25 RDS on trr 800V 800V 8A 9A 1.1W 0.9W 250 ns 250 ns TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 800 V


    Original     		IXFH8N80 IXFH9N80 O-247 Figure10. 8n80 PDF

    scr tag 2 200

    Abstract: scr 106d 27-600R SCR bt 107 SCR BRX 49 BSTB0246 BTX30-200 scr 106B bt 151 600 scr bt 138
    Text: iTïïffi SCR IN METAL PACKAGE TO-39 •7 ? 1, 6 A RMS A r>M C IM M O h T A n DUC IM 'W 15V 2N2322 2N2322A BTX30- 50 2N2323 2N2323A BTX30-100 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A 25V 50V 60V 100V 150V vDRM 200V V 250V RRM BLOCKING VOLTAGE


    OCR Scan     		2N2322 2N2322A BTX30- 2N2323 2N2323A BTX30-100 2N2324 2N2324A TAG611-100 TAG612-100 scr tag 2 200 scr 106d 27-600R SCR bt 107 SCR BRX 49 BSTB0246 BTX30-200 scr 106B bt 151 600 scr bt 138 PDF

    BSTB0246

    Abstract: BT100A BSTC0540 BSTB0226 bt 2328 BTW 600 BT106A BS9-04A 27-600R TAG106D
    Text: MANUFACTURERS T E C H N IC A L DATA SHOULD TAG nearest Equivalent Type TAG nearest Equivalent Type AA AA AA AA AA 107 108 109 110 111 2N 2N 2N 2N 2N BRX BRY BRY BRY BRY 66 54-100 54-200 54-300 54-400 BRX TAG TAG TAG TAG 66 611-100 611-200 611-300 611-400 AA


    OCR Scan     		55-500M 55-600M 55-700M 55-800M 2-800RU 92-1000RM 92-1000RU 16N-400DM 16N-400DU 16N-600DM BSTB0246 BT100A BSTC0540 BSTB0226 bt 2328 BTW 600 BT106A BS9-04A 27-600R TAG106D PDF