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Kyocera AVX Components NB21N50104KBB THERM NTC 100KOHM 4160K 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NB21N50104KBB	Digi-Reel	3,940		1	1 $0.25 10 $0.25 100 $0.1561 1000 $0.12958 10000 $0.12958	Buy Now
	NB21N50104KBB	Cut Tape	3,940		1	1 $0.25 10 $0.25 100 $0.1561 1000 $0.12958 10000 $0.12958	Buy Now
Avnet Americas	NB21N50104KBB	Bulk		16 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 $0.08971	Buy Now
Newark	NB21N50104KBB	Reel			4,000	1 $0.15 10 $0.15 100 $0.15 1000 $0.15 10000 $0.124	Buy Now
Avnet Abacus	NB21N50104KBB	Reel		20 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Kyocera AVX Components NB21N50104JBB THERM NTC 100KOHM 4160K 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NB21N50104JBB	Digi-Reel	3,830		1	1 $0.28 10 $0.28 100 $0.1758 1000 $0.14629 10000 $0.14629	Buy Now
	NB21N50104JBB	Cut Tape	3,830		1	1 $0.28 10 $0.28 100 $0.1758 1000 $0.14629 10000 $0.14629	Buy Now
Avnet Americas	NB21N50104JBB	Bulk		16 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 $0.10256	Buy Now
Newark	NB21N50104JBB	Cut Tape			10	1 - 10 $0.241 100 $0.223 1000 $0.223 10000 $0.223	Buy Now
TTI	NB21N50104JBB	Reel	16,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.113	Buy Now
TME	NB21N50104JBB				4,000	1 - 10 - 100 - 1000 - 10000 $0.167	Get Quote

Avnet Abacus	NB21N50104JBB	Reel		20 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	NB21N50104JBB		4,000		1	1 - 10 - 100 - 1000 - 10000 $0.2069	Buy Now
Nisshinbo Micro Devices R1121N501B-TR-FE IC REG LINEAR 5V 150MA SOT23-5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R1121N501B-TR-FE	Digi-Reel	2,991		1	1 $0.61 10 $0.428 100 $0.3348 1000 $0.28573 10000 $0.28573	Buy Now
	R1121N501B-TR-FE	Cut Tape	2,991		1	1 $0.61 10 $0.428 100 $0.3348 1000 $0.28573 10000 $0.28573	Buy Now
Infineon Technologies AG SPP21N50C3XKSA1 MOSFET N-CH 500V 21A TO220-3
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DigiKey	SPP21N50C3XKSA1	Tube	1,903		1	1 $4.55 10 $4.55 100 $4.55 1000 $1.68012 10000 $1.68012	Buy Now
Avnet Americas	SPP21N50C3XKSA1	Tube		15 Weeks	500	1 - 10 - 100 - 1000 $1.62825 10000 $1.58577	Buy Now
Newark	SPP21N50C3XKSA1	Bulk	712		1	1 $4.04 10 $3.53 100 $2.34 1000 $2.06 10000 $2.06	Buy Now
Bristol Electronics	SPP21N50C3XKSA1		1,950			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SPP21N50C3XKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SPB21N50C3ATMA1 MOSFET N-CH 560V 21A TO263-3
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DigiKey	SPB21N50C3ATMA1	Cut Tape	1,683		1	1 $4.7 10 $3.116 100 $4.7 1000 $1.8323 10000 $1.8323	Buy Now
	SPB21N50C3ATMA1	Digi-Reel	1,683		1	1 $4.7 10 $3.116 100 $4.7 1000 $1.8323 10000 $1.8323	Buy Now
	SPB21N50C3ATMA1	Reel	1,000		1,000	1 - 10 - 100 - 1000 $1.75584 10000 $1.75584	Buy Now
Newark	SPB21N50C3ATMA1	Cut Tape	1,806		1	1 $4.89 10 $3.24 100 $2.31 1000 $1.9 10000 $1.9	Buy Now
EBV Elektronik	SPB21N50C3ATMA1			16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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21N50 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
21_N-50-3-11/133_NE		HUBER+SUHNER	21_N-50-3-11/133_NE		Original	PDF

21N50 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
21N50Q Abstract: No abstract text available Text: Advance Technical Information IXTH 21N50Q IXTT 21N50Q Power MOSFETs Q-Class VDSS = 500 V = 21 A ID25 RDS on = 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR	Original	21N50Q 21N50Q O-247 O-268 O-268	PDF
IXFH21N50Q Abstract: No abstract text available Text: IXFH 21N50Q IXFT 21N50Q HiPerFETTM Power MOSFETs Q-Class VDSS = 500 V = 21 A ID25 RDS on = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	21N50Q 065B1 728B1 123B1 728B1 IXFH21N50Q	PDF
3350c Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 21N50Q IXFT 21N50Q Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 21 A IDM	Original	21N50Q O-247 O-268 3350c	PDF
21N50F Abstract: No abstract text available Text: Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFH 21N50F VDSS IXFT 21N50F ID25 RDS on = 500 V = 21A Ω = 250mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr	Original	21N50F O-247 728B1	PDF
Untitled Abstract: No abstract text available Text: MegaMOSTMFET VDSS IXTH / IXTM 21N50 IXTH / IXTM 24N50 500 V 500 V ID25 RDS on 21 A 0.25 Ω 24 A 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous	Original	21N50 24N50 O-247 O-204	PDF
Untitled Abstract: No abstract text available Text: VDSS = 500 V = 21 A ID25 RDS on = 0.25 Ω IXFH 21N50Q IXFT 21N50Q HiPerFETTM Power MOSFETs Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	21N50Q O-247 065B1 728B1 123B1 728B1	PDF
3350c Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 21N50Q IXFT 21N50Q Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 21 A IDM	Original	21N50Q O-247 O-268 3350c	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 21N50Q IXFT 21N50Q Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 21 A Maximum Ratings	Original	21N50Q 21N50Q O-247 O-268 O-268AA	PDF
21N50Q Abstract: No abstract text available Text: IXFH 21N50Q IXFT 21N50Q HiPerFETTM Power MOSFETs Q-Class VDSS = 500 V = 21 A ID25 RDS on = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	21N50Q O-268 728B1 21N50Q	PDF
21n50c3 Abstract: SPB21N50C3 21N50C P-TO220-3-31 Q67040-S4585 S4565 SPA21N50C3 SPI21N50C3 SPP21N50C3 SMD TRANSISTOR MARKING 6c Text: 21N50C3, 21N50C3 21N50C3, 21N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-31	Original	SPP21N50C3, SPB21N50C3 SPI21N50C3, SPA21N50C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 21n50c3 SPB21N50C3 21N50C P-TO220-3-31 Q67040-S4585 S4565 SPA21N50C3 SPI21N50C3 SPP21N50C3 SMD TRANSISTOR MARKING 6c	PDF
21N50C3 Abstract: No abstract text available Text: 21N50C3 21N50C3, 21N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1	Original	SPP21N50C3 SPI21N50C3, SPA21N50C3 PG-TO-220-3-31: P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 SPI21N50C3 21N50C3	PDF
21n50c3 Abstract: PG-TO220FP spp21n50c3 Text: 21N50C3 21N50C3, 21N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P G-TO262 PG-TO220FP PG-TO220 • Periodic avalanche rated	Original	SPP21N50C3 SPI21N50C3, SPA21N50C3 PG-TO220FP G-TO262 PG-TO220 SPI21N50C3 SPA21N50C3 PG-TO220 21n50c3	PDF
21n50c3 Abstract: TRANSISTOR SMD 2x t AN-TO220-3-31-01 S4565 s4585 SPA21N50C3 SPB21N50C3 SPI21N50C3 SPP21N50C3 21N50C Text: Preliminary data 21N50C3, 21N50C3 21N50C3, 21N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-31	Original	SPP21N50C3, SPB21N50C3 SPI21N50C3, SPA21N50C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 21n50c3 TRANSISTOR SMD 2x t AN-TO220-3-31-01 S4565 s4585 SPA21N50C3 SPB21N50C3 SPI21N50C3 SPP21N50C3 21N50C	PDF
21n50c3 Abstract: 21N50C PG-TO263 21n50 SPP21N50C3 PG-TO263-3-2 SPB21N50C3 Text: 21N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPB21N50C3 PG-TO263 Q67040-S4566 21N50C3 21n50c3 21N50C PG-TO263 21n50 SPP21N50C3 PG-TO263-3-2 SPB21N50C3	PDF

24N50 Abstract: 21N50 26N50 N50 DIODE IXFH26N50 .24n50 IXFH 24N50 IXFH24N50 Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM 21 N50 IXFH/IXFM 24 N50 IXFH 26 N50 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous	Original	21Node 21N50 24N50 26N50 O-204AE 24N50 21N50 26N50 N50 DIODE IXFH26N50 .24n50 IXFH 24N50 IXFH24N50	PDF
21N50ES Abstract: 21N50 TO3P package to-247 to-220 to-3p 21N50E Text: DATE CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor	Original	FMV21N50ES MS5F7233 H04-004-05 H04-004-03 21N50ES 21N50 TO3P package to-247 to-220 to-3p 21N50E	PDF
21n50 Abstract: IXFH21N50 Text: HiPerFET Power MOSFETs VDSS IXFH/IXFT 21N50 IXFH/IXFT 24N50 IXFH/IXFT 26N50 V DSS Tj =25°Cto150°C 500 V vDQB Tj = 25° C to 150° C; RGS= 1 Mi2 500 V V os Continuous ±20 V vGSM Transient ±30 V 21 24 26 84 96 104 21 24 26 A A A A A A A A A 30 mJ 5 V/ns	OCR Scan	21N50 24N50 26N50 Cto150 26N50 IXFH21N50	PDF
21N50 Abstract: 6N80 MOSFET 11N80 PAGE-42 K 15N60 6N80A IXTM21N50 IXTH7P50 Text: Standard Power MOSFETs and MegaMOS FETs N-Channell Enhancement-Mode Type V DSS max. t jm = 150° c ► New IXTM 12N50A V 500 IXTM 21N50 IXTM 24N50 *025 □ DS<on C ies typ. C res typ. p PF PF K/W W LL 12 0.4 2800 70 600 120 0.7 180 5b 21 24 0.25 0.23 4200	OCR Scan	12N50A 21N50 24N50 15N60 20N60 6N80A 11N80 13N80 6N90A 10N90 6N80 MOSFET 11N80 PAGE-42 K 15N60 IXTM21N50 IXTH7P50	PDF
21n50 Abstract: 24n50 Text: nixYS MegaMOS FET IXTH/IXTM 21N50 IXTH/IXTM 24N50 p VDSS ^D25 500 V 500 V 21 A 24 A DS on 0.25 Q 0.23 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V„ss Tj =25°C to150°C 500 V vDQR ^ 500 V Vos VGSM Continuous ±20 V Transient ±30	OCR Scan	21N50 24N50 to150 O-247 T0-204A T0-204	PDF
Untitled Abstract: No abstract text available Text: □ IX Y S V DSS MegaMOS FET IXTH/21N50 IXTH/IXTM24N50 500 V 500 V □ ^D25 DS on 21 A 0.25 Q 24 A 0.23 Q N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V VDOR Tj = 25 °C to 150°C; RGS = 1 MQ 500	OCR Scan	IXTH/IXTM21N50 IXTH/IXTM24N50 O-247 21N50 24N50 4bflb22b	PDF
IXFH21N50 Abstract: No abstract text available Text: HiPerFET Power MOSFETs IXFH/21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family Maximum Ratings Test Conditions V DSS T d = 25°C to 150°C 500 V v DGR T d = 25°C to 150°C; RGS = 1 M£i 500	OCR Scan	IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 O-247 IXFT24N50 IXFH26N50 IXFM26N50 IXFT26N50 IXFH21N50	PDF
mosfet 4400 Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,	OCR Scan	100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS	PDF
gs 1117 ax Abstract: 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B Text: v DSS HiPerFET Power MOSFETs DS on 500 V 21 A 0.25 a 500 V 24 A 0.23 Q 500 V 26 A 0.20 il IXFH/IXFM21 N50 IXFH/IXFM 24 N50 IXFH26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 t„ < 250 ns ?D G As Maximum Ratings Symbol Test Conditions	OCR Scan	IXFH/IXFM21 IXFH26N50 21N50 24N50 26N50 gs 1117 ax 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B	PDF
75N1 Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH	OCR Scan	76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B	PDF

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21N50 Price and Stock

Kyocera AVX Components NB21N50104KBB

Kyocera AVX Components NB21N50104JBB

Nisshinbo Micro Devices R1121N501B-TR-FE

Infineon Technologies AG SPP21N50C3XKSA1

Infineon Technologies AG SPB21N50C3ATMA1

21N50 Datasheets (1)

21N50 Datasheets Context Search

21N50Q

IXFH21N50Q

3350c

21N50F

Untitled

Untitled

3350c

Untitled

21N50Q

21n50c3

21N50C3

21n50c3

21n50c3

21n50c3

24N50

21N50ES

21n50

21N50

21n50

Untitled

IXFH21N50

mosfet 4400

gs 1117 ax

75N1