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    24N50 Search Results

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    24N50 Price and Stock

    Flip Electronics FDA24N50

    MOSFET N-CH 500V 24A TO3PN
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    DigiKey FDA24N50 Tube 751 90
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    HUBER+SUHNER 24_N-50-2-14/133_NE

    24_N-50-2-14/133_NE
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    Onlinecomponents.com 24_N-50-2-14/133_NE
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    onsemi FDA24N50F

    MOSFET N-CH 500V 24A TO3PN
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    DigiKey FDA24N50F Tube 117 1
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    Avnet Americas FDA24N50F Tube 630 16 Weeks 30
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    Chip1Stop FDA24N50F 3,060
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    HUBER+SUHNER 24_N-50-3-14/133_NE

    24_N-50-3-14/133_NE
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    DigiKey 24_N-50-3-14/133_NE Bulk 45 1
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    Master Electronics 24_N-50-3-14/133_NE 20
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    HUBER+SUHNER 24_N-50-3-10/133_NE

    24_N-50-3-10/133_NE
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    DigiKey 24_N-50-3-10/133_NE Bulk 10 1
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    Mouser Electronics 24_N-50-3-10/133_NE 4
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    Find more 24N50 price and stock on Findchips.com

    24N50 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    24_N-50-2-14/133_NE HUBER+SUHNER 24_N-50-2-14/133_NE Original PDF
    24_N-50-3-14/133_NE HUBER+SUHNER 24_N-50-3-14/133_NE Original PDF
    24_N-50-3-51/19-_NE HUBER+SUHNER 24_N-50-3-51/19-_NE Original PDF

    24N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ixf26n50q

    Abstract: 24N50 26N50Q 125OC ixf26N50
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 24N50Q 26N50Q 125OC 728B1 ixf26n50q 24N50 26N50Q 125OC ixf26N50

    24N50

    Abstract: 26N50 .24n50 IXFH26N50 IXFR24N50 IXFR26N50
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		PDF 26N50 ISOPLUS247TM 24N50 247TM IXFR26N50 IXFR24N50 IXFH26N50 24N50 26N50 .24n50 IXFR24N50 IXFR26N50

    26N50

    Abstract: IXFC 26N50 IXFH26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50
    Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM


    Original     		PDF ISOPLUS220TM 26N50 24N50 220LVTM IXFC26N50 IXFC24N50 IXFH26N50 728B1 123B1 728B1 26N50 IXFC 26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 24N50 Power MOSFET 24A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF 24N50 24N50 QW-R502-533

    24N50

    Abstract: mosfet 24n50 24N50L-T47-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 24N50 Power MOSFET 24A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF 24N50 24N50 QW-R502-533 mosfet 24n50 24N50L-T47-T

    24N60

    Abstract: IXGH24N50B IXGH24N60B
    Text: HiPerFASTTM IGBT 24N50B IXGH24N60B VCES IC 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings 24N50 24N60 TO-247 AD VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF IXGH24N50B IXGH24N60B 24N50 24N60 O-247 IXGH24N60B

    c2548

    Abstract: IXGH24N50BU1 IXGH24N60BU1
    Text: HiPerFASTTM IGBT with Diode 24N50BU1 IXGH24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF IXGH24N50BU1 IXGH24N60BU1 24N50 24N60 O-247 tempera10 IXGH24N50BU1 c2548 IXGH24N60BU1

    ixfh26n50q

    Abstract: 26N50 IXFC 26N50
    Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50Q IXFC 24N50Q Electrically Isolated Back Surface ID25 RDS on 0.20 Ω 0.23 Ω 500 V 23 A 500 V 21 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		PDF ISOPLUS220TM 26N50Q 24N50Q 220TM 26N50 24N50 ixfh26n50q IXFC 26N50

    26N50

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		PDF 26N50 ISOPLUS247TM 24N50 24N50 IXFR26N50

    W2515

    Abstract: IXGH24N50BU1 IXGH24N60BU1
    Text: HiPerFASTTM IGBT with Diode 24N50BU1 IXGH24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF IXGH24N50BU1 IXGH24N60BU1 24N50 24N60 O-247 tempera000 IXGH24N50BU1 W2515 IXGH24N60BU1

    ixf26N50

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 24N50Q 26N50Q O-240 125OC 728B1 ixf26N50

    26n50

    Abstract: .24n50 24n50 ixfc26n50 IXFC24N50 IXFH26N50 W26-1 Ixfc 26n50
    Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50 IXFC 24N50 Electrically Isolated Back Surface ID25 500 V 23 A 500 V 21 A trr ≤ 250 ns RDS on 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Symbol


    Original     		PDF ISOPLUS220TM 26N50 24N50 220TM IXFC26N50 IXFC24N50 IXFH26N50 26n50 .24n50 24n50 ixfc26n50 IXFC24N50 W26-1 Ixfc 26n50

    24N50

    Abstract: 26N50 IXFC24N50 IXFC26N50 IXFH26N50
    Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM


    Original     		PDF ISOPLUS220TM 26N50 24N50 220LVTM IXFC26N50 IXFC24N50 IXFH26N50 728B1 123B1 728B1 24N50 26N50 IXFC24N50 IXFC26N50

    26N50

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS 26N50 IXFR 24N50 Electrically Isolated Back Surface ID25 500 V 24 A 500 V 22 A trr £ 250 ns RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		PDF ISOPLUS247TM 26N50 24N50 24N50 IXFR26N50

    26N50Q

    Abstract: IXFH26N50Q 24N50Q
    Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS 26N50Q IXFR 24N50Q Electrically Isolated Back Surface ID25 RDS(on) 500 V 24 A 500 V 22 A trr £ 250 ns 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol


    Original     		PDF ISOPLUS247TM 26N50Q 24N50Q 24N50Q IXFR26N50Q IXFH26N50Q

    Untitled

    Abstract: No abstract text available
    Text: MegaMOSTMFET VDSS IXTH / IXTM 21N50 IXTH / IXTM 24N50 500 V 500 V ID25 RDS on 21 A 0.25 Ω 24 A 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous


    Original     		PDF 21N50 24N50 O-247 O-204

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50 IXFC 24N50 Electrically Isolated Back Surface ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM


    Original     		PDF ISOPLUS220TM 26N50 24N50 220LVTM IXFC26N50 IXFC24N50 IXFH26N50 728B1 123B1 728B1

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXTH 24N50Q IXTT 24N50Q Power MOSFETs Q-Class VDSS = 500 V = 24 A ID25 RDS on = 0.24 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR


    Original     		PDF 24N50Q O-247 728B1 123B1 728B1 065B1

    24n50

    Abstract: IXFH26N50Q A24N50 .24n50 26N50 ISOPLUS247 IXFR24N50Q IXFR26N50Q SST250
    Text: □IXYS Advanced Technical Information V DSS HiPerFET Power MOSFETs IXFR ISOPLUS247™ 26N50Q IXFR 24N50Q Electrically Isolated Back Surface D ^D25 24 A 500 V 22 A 500 V t rr < 250 ns DS(on) 0.20 Q 0.23 Q N-Channel Enhancement Mode HighdV/dt, Lowtrr, HDMOS™ Family


    OCR Scan     		PDF ISOPLUS247â 26N50Q 24N50Q 26N50 24N50 IXFR26N50Q IXFH26N50Q A24N50 .24n50 ISOPLUS247 IXFR24N50Q SST250

    24N50

    Abstract: IXGH24N50BU1 IXGH24N60BU1
    Text: DIXYS HiPerFAST IGBT with Diode Symbol V,CES IXGH 24N50BU1 IXGH 24N60BU1 24N50 600 V V Continuous ±20 V VGEM T ransient ±30 V C25 Tc = 25°C 48 A ^C90 T c = 90°C 24 A ®CM T c = 25°C, 1 ms 96 A SSOA RBSOA VGE = 15 V, TVJ = 125°C, Rg = 22 Q Clamped inductive load, L = 100,uH


    OCR Scan     		PDF 24N50BU1 24N60BU1 24N50 24N60 -247A 24N50 IXGH24N50BU1 IXGH24N60BU1

    6G E 2080 diode

    Abstract: IXGH24N50BU1 IXGH24N60BU1 24n60
    Text: v CES HiPerFAST IGBT with Diode Symbol 24N50BU1/S IXGH24N60BU1/S Maximum Ratings Test Conditions 24N50 Tj = 25“C to 150°C 500 600 V vCGfl vGES vGEM Tj = 25°C to 150°C; RaE = 1 MQ 500 600 V Continuous ±20 V Transient ±30 V ^C25 *C90 ^CM T c = 25°C


    OCR Scan     		PDF IXGH24N50BU1/S IXGH24N60BU1/S 24N50 24N60 O-247 24NS0BU1 IXGH24W6SU1 24N50BU1 24N60BU1 6G E 2080 diode IXGH24N50BU1 IXGH24N60BU1

    GEM X 365

    Abstract: IXGH24N60B 24N60 IXGH24N50B zr smd
    Text: Prelim inary data HiPerFAST IGBT 24N50B IXGH24N60B V CES ^C 25 VCE(sat) 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns TO-247 SMD (24N*BS) Znr Symbol Test Conditions Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C 500 600 V Vcon Tj = 25°C to 150°C; RGE = 1 MQ


    OCR Scan     		PDF IXGH24N50B IXGH24N60B O-247 24N50 24N60 GEM X 365 24N60 zr smd

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Advanced Technical Information VDSS HiPerFET Power MOSFETs IXFR ISOPLUS247™ D ^D25 24 A 500 V 22 A 500 V t rr < 250 ns 26N50 IXFR 24N50 Electrically Isolated Back Surface D S (on) 0.20 Q 0.23 Q N-Channel Enhancement Mode HighdV/dt, Low trr, HDM O S™ Family


    OCR Scan     		PDF ISOPLUS247â 26N50 24N50 IXFR26N50

    .24n50

    Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1
    Text: Preliminary data HiPerFAST IGBT with Diode 24N50BU1 IXGH24N60BU1 V CES *C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24N*BU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C


    OCR Scan     		PDF IXGH24N50BU1 IXGH24N60BU1 T0-247 24N50 24N60 .24n50 xgh2 IXGH24N60BU1