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    6G E 2080 diode

    Abstract: IXGH24N50BU1 IXGH24N60BU1 24n60
    Text: v CES HiPerFAST IGBT with Diode Symbol IXGH24N50BU1/S IXGH24N60BU1/S Maximum Ratings Test Conditions 24N50 Tj = 25“C to 150°C 500 600 V vCGfl vGES vGEM Tj = 25°C to 150°C; RaE = 1 MQ 500 600 V Continuous ±20 V Transient ±30 V ^C25 *C90 ^CM T c = 25°C


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    PDF IXGH24N50BU1/S IXGH24N60BU1/S 24N50 24N60 O-247 24NS0BU1 IXGH24W6SU1 24N50BU1 24N60BU1 6G E 2080 diode IXGH24N50BU1 IXGH24N60BU1