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    IXTH75N10 Search Results

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    IXTH75N10 Price and Stock

    Littelfuse Inc IXTH75N10L2

    MOSFET N-CH 100V 75A TO247
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    DigiKey IXTH75N10L2 Tube 269 1
    • 1 $16.59
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    Newark IXTH75N10L2 Bulk 6 1
    • 1 $17.24
    • 10 $13.97
    • 100 $10.71
    • 1000 $9.39
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    IXYS Corporation IXTH75N10

    MOSFET N-CH 100V 75A TO247
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    DigiKey IXTH75N10 Tube 30
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    Mouser Electronics IXTH75N10
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    Verical IXTH75N10 1 1
    • 1 $6.716
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    Arrow Electronics IXTH75N10 1 1
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    Onlinecomponents.com IXTH75N10 44
    • 1 $43.81
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    Bristol Electronics IXTH75N10 30
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    Quest Components IXTH75N10 24
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    Component Electronics, Inc IXTH75N10 57
    • 1 $8.46
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    • 100 $6.35
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    IXYS Corporation IXTH75N10L2

    MOSFETs LinearL2 Powr MOSFET w/extended FBSOA
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    Mouser Electronics IXTH75N10L2 1,171
    • 1 $16.25
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    Bristol Electronics IXTH75N10L2 30
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    Quest Components IXTH75N10L2 24
    • 1 $7.812
    • 10 $5.7288
    • 100 $5.208
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    TTI IXTH75N10L2 Tube 300
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    New Advantage Corporation IXTH75N10L2 24 1
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    IXTH75N10 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH75N10 IXYS 1000V HiPerFET power MOSFET Original PDF
    IXTH75N10 IXYS MegaMOS Power MOSFETs Scan PDF
    IXTH75N10 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IXTH75N10L2 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 75A TO-247 Original PDF

    IXTH75N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Irfp250 irfp460

    Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
    Text: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)


    OCR Scan     		O-204 O-264 ISOPLUS247 O-220 O-252 O-247 O-268 ISOPLUS220 O-263 OT-227B Irfp250 irfp460 IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20 PDF

    IXTH75N10L2

    Abstract: IXTT75N10L2 IXTH75N10L
    Text: Advance Technical Information IXTH75N10L2 IXTT75N10L2 LinearL2TM Power MOSFET w/extended FBSOA VDSS ID25 = 100V = 75A ≤ 21mΩ Ω RDS on D O D N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated RGi G O ww TO-247 (IXTH) O S Symbol Test Conditions


    Original     		IXTH75N10L2 IXTT75N10L2 O-247 100ms 75N10L2 IXTH75N10L2 IXTT75N10L2 IXTH75N10L PDF

    75n08

    Abstract: megamos 46 08 09 6 TL 1074 CT Mosfet K 135 To3 p 75n08 k 1120 P-Channel MOSFET 800v f g megamos
    Text: I X Y S IDE CORP D I 4böbS?b D OOG a b b T □IXYS I 't f - l Ç MegaMOS FETs IXTH75N10, 08 IXTM75N10, 08 MAXIMUM RATINGS Sym. IXTH75N08 IXTM75N08 IXTH75N10 IXTM75N10 Unit Drain-Source Voltage 1 Vd s s 80 100 Vdc Drain-Gate Voltage (Rq s = 1-OMfl) (1)


    OCR Scan     		IXTH75N08 IXTH75N10 IXTM75N08 IXTM75N10 IXTH75N10, IXTM75N10, 0-100V, O-247 75n08 megamos 46 08 09 6 TL 1074 CT Mosfet K 135 To3 p 75n08 k 1120 P-Channel MOSFET 800v f g megamos PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information LinearL2TM Power MOSFET w/extended FBSOA VDSS ID25 IXTH75N10L2 IXTT75N10L2 = 100V = 75A ≤ 21mΩ Ω RDS on D O D N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated RGi G O ww TO-247 (IXTH) O S Symbol Test Conditions


    Original     		IXTH75N10L2 IXTT75N10L2 O-247 100ms 75N10L2 PDF

    Severns

    Abstract: Rudy Severns
    Text: 军用车载之电器系统常要符合严苛的瞬变要求， 要保护功率转换模块免受这些瞬态冲击，分别需两项 有关的指标一般为美国的 MIL-STD-1275B 及英国的 技巧。对于尖峰，并联瞬态滤波器，例如瞬态吸收器


    Original     		MIL-STD-1275B DEF-STAN-61-5( P6KE33A 8-36V 5KE100A ED-31 Severns Rudy Severns PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    IXTH75N10

    Abstract: No abstract text available
    Text: ü ü — PRELIMINARY SFF75N10/3 SOLID STATE DEVICES, INC i -L 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 75 AMP 100 VOLTS 0.025 Q N-CHANNEL POWER MOSFET Designer’s Data Sheet


    OCR Scan     		670-SSDI IXTH75N10 PDF

    IXTH40N25

    Abstract: irfp450 equivalent IXTH7P50 IXTH12N90 IXTD50N20-7X IXTD11N80 IRFP460 equivalent
    Text: Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type V *BSS m ax. e * m ax. typ- typ. Chip type C hips» se «18 Source Ct bond w ire T j.s lS O 'C V - datasheet Q ns mm Dim. out­ line No. mfts IXTD67N10-7X IXTD75N10-7X 100 0.025


    OCR Scan     		IXTD67N10-7X IXTD75N10-7X IXTD42N20-7X IXTD50N20-7X IXTD40N25-6X IXTD40N30-7X IRFC450-5X IRFC460-6X IXTD21N50-7X IXTD24N50-7X IXTH40N25 irfp450 equivalent IXTH7P50 IXTH12N90 IXTD11N80 IRFP460 equivalent PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: SFF75N10M SFF75N10Z SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 75 AMP 100 VOLTS 0.025 Ω N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET FEATURES: • • • • • • • • • •


    Original     		SFF75N10M SFF75N10Z O-254 O-254Z IXTH75N10 125oC) PDF

    1XTH5N100

    Abstract: xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50
    Text: lOIXYS_ Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type Vwa ÖWL T r ia r e V V 1 M * A iijfit CMpsiza dimensions S o w n OP bvftdw trft iw a in w id Equivalent «M ae Own. out­ line No mm mils IXTD67N10 IXTD75N10


    OCR Scan     		IXTD67N10 IXTD75N10 IRFC250 IXTD42N20 IXTD50N20 IXTD68N20 IRFC254 IXTD40N25 IXTD35M30 IXTD40N30 1XTH5N100 xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION IXTC 75N10 MegaMOSTMFET N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C


    Original     		75N10 ISOPLUS220TM 728B1 123B1 728B1 065B1 PDF

    IXTH75N10

    Abstract: SFF75N10M SFF75N10Z
    Text: PRELIMINARY §S II SOLID STATE DEVICES, INC SFF75N10M SFF75N10Z 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 75 AMP 100 VOLTS 0.025 Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with polysilicon gate


    OCR Scan     		SFF75N10M SFF75N10Z 670-SSDI IXTH75N10 O-254 O-254Z SFF75N10Z PDF

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR PDF

    IXTH75N10

    Abstract: No abstract text available
    Text: SsHI PRELIMINARY SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 75 AMP 100 VOLTS 0.025 Q. N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with polysilicon gate


    OCR Scan     		670-SSDI IXTH75N10 PDF

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


    Original     		PDF

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50 PDF

    IXTH75N10

    Abstract: 75N10 ns180
    Text: ADVANCE TECHNICAL INFORMATION IXTC 75N10 MegaMOSTMFET VDSS = 100 V = 72 A ID25 Ω RDS on = 20 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous


    Original     		75N10 ISOPLUS220TM 728B1 123B1 728B1 065B1 IXTH75N10 75N10 ns180 PDF

    F70 Package

    Abstract: IXTH75N10 SFF75N10N SFF75N10P
    Text: PRELIMINAR\ SFF75N10N SFF75N10P SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 75 AMP 100 VOLTS 0.025 Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with polysilicon gate


    OCR Scan     		670-SSDI IXTH75N10 SFF75N10N SFF75N10P O-258 O-259 F70 Package SFF75N10P PDF

    IXTH75N10

    Abstract: SFF75N10M SFF75N10Z
    Text: SFF75N10M SFF75N10Z SOLID STATE DEVICES, INC. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 75 AMP 100 VOLTS 0.025 Ω N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET FEATURES: • • • • • • • • • • •


    Original     		SFF75N10M SFF75N10Z IXTH75N10 O-254 O-254Z F00153F SFF75N10M SFF75N10Z PDF

    fqp60n06

    Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
    Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL


    Original     		STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30 PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


    Original     		P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor PDF

    SFF75N10M

    Abstract: IXTH75N10 SFF75N10Z F00153G
    Text: SFF75N10M SFF75N10Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 75 AMP N-CHANNEL POWER MOSFET DESIGNER’S DATA SHEET Part Number / Ordering Information 1/


    Original     		SFF75N10M SFF75N10Z SFF75N10 O-254 O-254Z Sup153G SFF75N10M IXTH75N10 SFF75N10Z F00153G PDF

    BC107BP

    Abstract: TRANSISTOR BC107BP Rudy Severns TRANSISTOR DATASHEET BC107BP Severns uA555 TRANSISTOR DATASHEET BC107B Datasheet for BC107B BJT "Safe Operating Area and Thermal Design" silicon LM10CN
    Text: MEETING TRANSIENT SPECIFICATIONS FOR ELECTRICAL SYSTEMS IN MILITARY VEHICLES By Arthur Jordan Sr. Applications Engineer, Vicor Electrical systems in military vehicles are normally required to meet stringent transient requirements. Typical of these specifications are MIL-STD-1275B in the U.S.A. and DEF-STAN


    Original     		MIL-STD-1275B MIL-STD-461E ED-31 BC107BP TRANSISTOR BC107BP Rudy Severns TRANSISTOR DATASHEET BC107BP Severns uA555 TRANSISTOR DATASHEET BC107B Datasheet for BC107B BJT "Safe Operating Area and Thermal Design" silicon LM10CN PDF