2E12
Abstract: FSL130R4 JANSR2N7395 Rad Hard in Fairchild for MOSFET
Text: JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 95 /Subject (8A, 100V, 0.230 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 100V, 0.230
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JANSR2N7395
FSL130R4
R2N73
2E12
FSL130R4
JANSR2N7395
Rad Hard in Fairchild for MOSFET
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PDF
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2N6796
Abstract: TB334
Text: 2N6796 Data Sheet December 2001 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor
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Original
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2N6796
2N6796
O-205AF
TB334
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PDF
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1E14
Abstract: 2E12 FRL130R4 JANSR2N7272
Text: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from
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Original
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JANSR2N7272
FRL130R4
1000K
1E14
2E12
FRL130R4
JANSR2N7272
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PDF
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1E14
Abstract: 2E12 FRL130R4 JANSR2N7272 Rad Hard in Fairchild for MOSFET
Text: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 8A, 100V, rDS ON = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from
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Original
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JANSR2N7272
FRL130R4
1000K
1E14
2E12
FRL130R4
JANSR2N7272
Rad Hard in Fairchild for MOSFET
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PDF
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2n6796
Abstract: MOSFET
Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINQRELO, NEW JERSEY 07081 U.SA 2N6796 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications
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Original
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2N6796
2N6796
310mA
00A/HS
MOSFET
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PDF
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IRF521
Abstract: IRF520 irf523 F521 irf522
Text: HAJims S IRF520, IRF521, IRF522, IRF523 S e m ico n d ucto r y y 8A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 8A and 9.2A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRF520,
IRF521,
IRF522,
IRF523
TA09594
RF521,
IRF521
IRF520
irf523
F521
irf522
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PDF
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Untitled
Abstract: No abstract text available
Text: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 100V, rDS ON = 0.180Ω The Fairchild Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings
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Original
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JANSR2N7272
FRL130R4
1000K
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PDF
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Untitled
Abstract: No abstract text available
Text: JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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Original
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JANSR2N7395
FSL130R4
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PDF
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Untitled
Abstract: No abstract text available
Text: JANSR2N7272 Semiconductor Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.180Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both
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Original
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JANSR2N7272
1000K
O-205AF
254mm)
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PDF
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Untitled
Abstract: No abstract text available
Text: CEHAE«» JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDs ON = 0.230Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSL130R4
JANSR2N7395
MIL-STD-750,
MIL-S-19500,
500ms;
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PDF
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IRF5201
Abstract: IRF520 IRF521 IRF522 IRF523 TB334 irf520 mosfet MOSFET IRF520 IRF5213 IRF-520
Text: IRF520, IRF521, IRF522, IRF523 S E M I C O N D U C T O R 8A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 8A and 9.2A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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Original
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IRF520,
IRF521,
IRF522,
IRF523
IRF5201
IRF520
IRF521
IRF522
IRF523
TB334
irf520 mosfet
MOSFET IRF520
IRF5213
IRF-520
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PDF
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2N6796
Abstract: TB334
Text: 2N6796 Data Sheet November 1998 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET • 8A, 100V • rDS ON = 0.180Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device
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Original
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2N6796
O-205AF
2N6796
TB334
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PDF
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Untitled
Abstract: No abstract text available
Text: FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 100V, RDS on = 0.180^ TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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OCR Scan
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FRL130D,
FRL130R,
FRL130H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
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PDF
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2E12
Abstract: FRL130D FRL130H FRL130R
Text: FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 100V, RDS on = 0.180Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRL130D,
FRL130R,
FRL130H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
FRL130D
FRL130H
FRL130R
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PDF
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2E12
Abstract: FRL130D FRL130H FRL130R Rad Hard in Fairchild for MOSFET FRL130
Text: FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 100V, RDS on = 0.180Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRL130D,
FRL130R,
FRL130H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
FRL130D
FRL130H
FRL130R
Rad Hard in Fairchild for MOSFET
FRL130
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PDF
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Untitled
Abstract: No abstract text available
Text: FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 8A, 100V, RDS on = 0.180Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRL130D,
FRL130R,
FRL130H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
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PDF
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Untitled
Abstract: No abstract text available
Text: 3 3 W A R F ? FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 100V, r DS ON = 0.230Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSL130D,
FSL130R
MIL-STD-750,
MIL-S-19500,
500ms;
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PDF
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Untitled
Abstract: No abstract text available
Text: JSJ H A R R IS UU S E M I C O N D U C T O R FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 8A, 100V, RDS on = 0.180Q TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
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FRL130D,
FRL130R,
FRL130H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
631UIS
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PDF
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pj 939 diode
Abstract: Rad hard MOSFETS in Harris
Text: FRL130D, FRL130R, FRL130H Semiconductor 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 8A, 100V, RDS on = 0.180£i TO-205AF • Second Generation Rad Hard M OSFET Results From New Design Concepts • G am m a - M eets Pre-Rad Specifications to 100KRAD(Si)
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OCR Scan
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FRL130D,
FRL130R,
FRL130H
100KRAD
300KRAD
1000KRAD
3000KRAD
T0-205AF
254mm)
pj 939 diode
Rad hard MOSFETS in Harris
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PDF
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2E12
Abstract: FSL130R4 JANSR2N7395
Text: JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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Original
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JANSR2N7395
FSL130R4
2E12
FSL130R4
JANSR2N7395
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PDF
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2E12
Abstract: FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R3
Text: FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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Original
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FSL130D,
FSL130R
2E12
FSL130D
FSL130D1
FSL130D3
FSL130R
FSL130R1
FSL130R3
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PDF
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2E12
Abstract: FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R3
Text: FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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Original
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FSL130D,
FSL130R
2E12
FSL130D
FSL130D1
FSL130D3
FSL130R
FSL130R1
FSL130R3
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PDF
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Untitled
Abstract: No abstract text available
Text: FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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Original
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FSL130D,
FSL130R
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PDF
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2N6796
Abstract: TB334
Text: 2N6796 Data Sheet November 1998 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor
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Original
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2N6796
2N6796
O-205AF
TB334
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PDF
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