ifr120

Abstract: IFU120 IFr-120 IRFR120 IRFR120T IRFU120 TB334
Contextual Info: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

Contextual Info: IRFF120 Data Sheet Title FF1 bt 0A, 0V, 00 m, March 1999 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

irf121

Abstract: IRF120 IRF123
Contextual Info: iH A R R is IRF120, IRF121, IRF122, IRF123 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs O cto be r 1997 Features Description • 8.0A and 9.2A, 80V and 100V • High Input Im pedance T h e se are N -C hannel e n h a n ce m e n t m ode silicon gate

Contextual Info: RFK25N18, RFK25N20 Semiconductor Data Sheet October 1998 25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs File Number 1500.3 Features • 25A, 180V and 200V These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such

Contextual Info: IRFF120, IRFF121, IRFF122, IRFF123 S E M I C O N D U C T O R 5.0A and 6.0A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 5.0A and 6.0A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRFF120, IRFF121, IRFF122, IRFF123 HARRIS S E M I C O N D U C T O R 5.0A and 6.0A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 5.0A and 6.0A, 80V and 100V • High Input Im pedance These are N-Channel enhancement mode silicon gate

Contextual Info: J W S RFM12N08, RFM12N10, RFP12N08, RFP12N10 S em iconductor October 1998 Data Sheet 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: HARRIS s e m ic o n d u c to r IR F R 1 2 0 , IR F R 1 2 1 , IR F U 1 2 0 , IR F U 1 2 1 8.4A, 80V AND 100V, 0.27 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8.4A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

RFK25N20

Abstract: AN7254 AN7260 RFK25N18
Contextual Info: RFK25N18, RFK25N20 Data Sheet October 1998 25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

transistor IRF520

Abstract: irf520 mosfet 37ag transistor equivalent irf520 IRF520 TB334
Contextual Info: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET 1574.4 Features • 9.2A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRF120

Abstract: irf122 irf123
Contextual Info: IRF120, IRF121, IRF122, IRF123 S E M I C O N D U C T O R 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs October 1997 Features Description • 8.0A and 9.2A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRFF120

Abstract: TB334
Contextual Info: IRFF120 Data Sheet January 2002 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET Features • 6.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRF521

Abstract: IRF520 irf523 F521 irf522
Contextual Info: HAJims S IRF520, IRF521, IRF522, IRF523 S e m ico n d ucto r y y 8A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 8A and 9.2A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

Contextual Info: IRF120, IRF121, IRF122, IRF123 HARRIS S E M I C O N D U C T O R 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs October 1997 Description Features 8.0A and 9.2A, 80V and 100V Majority Carrier Device These are N-Channel enhancement mode silicon gate

irf52 0

Contextual Info: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET [ /Title IRF52 0 /Subject (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET, TO220AB , Intersil Corporation) /Creator ()

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

IRFF120

Abstract: TB334
Contextual Info: IRFF120 Data Sheet March 1999 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET 1563.3 Features • 6.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFU120

Abstract: IRFR120 motor IRFR120 TB334
Contextual Info: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

IRF120

Abstract: irf121 IRF122 IRF123 TB334
Contextual Info: IRF120, IRF121, IRF122, IRF123 Semiconductor 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs October 1997 Features Description • 8.0A and 9.2A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

cgs resistor

Abstract: RFP12N08 rfm12 ic 6 pin diode n10 RFM12N08 RFM12N10 RFP12N10 TB334 833ig
Contextual Info: RFM12N08, RFM12N10, RFP12N08, RFP12N10 Semiconductor Data Sheet 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs [ /Title RFM12 These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such N08, RFM12 as switching regulators, switching converters, motor drivers,

Contextual Info: IRF520 Semiconductor D ata S h eet June 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET • 9.2A, 100V Ordering Information • SOA is Power Dissipation Limited • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics

Contextual Info: IRFR120, IRFU120 Semiconductor Ju ly 1999 D ata S h eet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

IRF5201

Abstract: IRF520 IRF521 IRF522 IRF523 TB334 irf520 mosfet MOSFET IRF520 IRF5213 IRF-520
Contextual Info: IRF520, IRF521, IRF522, IRF523 S E M I C O N D U C T O R 8A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 8A and 9.2A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power