12N6LE

Abstract: 12n06rle 630E1
Contextual Info: RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet October 1999 File Number 2407.5 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title FD1 06R , D12 6RL M, P12 6RL bt A, V, 71 m, Packaging Features JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN

12n08

Abstract: rca application notes RFP12N10 pt 4115 TA9284 AN7260 AN7254 RFM12N08 RFM12N10 RFP12N08
Contextual Info: Standard Power MOSFETs RFM12N08, RFM12N10, RFP12N08, RFP12N10 File N um ber 1386 N-Channel Enhancernent-Mode Power Field-Effect Transistors 12 A, 80 and 100 V TdS o n ' 0.2 f i Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds

f12n10l

Abstract: f12N08L F12N08L FET RFP12N08L RFP12N10L f12n10 RFM12N08L f12n08 f12n "Voltage to Current Converter"
Contextual Info: Logic-Level Power MOSFETs F ile N u m b e r IN RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 151 N-Channel Logic Level Power Field-Effect Transistors L2 FET 12 A, 80 V and 100 V rD s(on ): 0.2 O Features: • Design optim ized for 5 volt gate drive ■ Can be driven dire ctly from Q-MOS, N-MOS, TTL C ircuits

AN7254

Abstract: RFP12P08 RFP12P10 TB334 TA17511
Contextual Info: RFP12P08, RFP12P10 Semiconductor June 1999 Data Sheet • 12A, 80V and 100V The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers

f12n10l

Abstract: f12n10 AN7254 AN7260 RFP12N10L TB334
Contextual Info: RFP12N10L Data Sheet April 2005 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as

Contextual Info: 4302571 0 0 5 4 7 5 ‘ï LT? • HAS ÎH HARRIS RFD12N06RLE, RFD12N06RLESM U U RFP12N06RLE S E M , C O N D U C T O R January1994 N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Packages • 12A,60V • r DS(on) RFD12N06RLE (TO-251)

12N6LE

Abstract: 12n06rle AN9322 RFD12N06RLE RFD12N06RLESM RFP12N06RLE TB334 n06r 12N06
Contextual Info: [ /Title RFD1 2N06R LE, RFD12 N06RL ESM, RFP12 N06RL E /Subject (12A, 60V, 0.135 Ohm, NChannel, Logic Level, Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel, Logic Level, Power MOS- RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet

RFP12N06RLE

Abstract: AN7254 RFD12N06RLE RFD12N06RLESM 12a60v 12A60 FD250
Contextual Info: m HARRIS RFD12N06RLE, RFD12N06RLESM RFP12N06RLE U L * January1994 N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs Packages Features RFD12N06RLE (TO-251) TOP VIEW • 12A.60V • rDS(on) = 0-135il • Electrostatic Discharge Rated

f12n10l

Abstract: f12N08L F12N08L FET f12n10 f12n08 RFP12N08L RFM12N08L "Voltage to Current Converter" RFM12N10L RFP12N10L
Contextual Info: 3875081 G E-" S O L I D S T A T E D 1 ^ F | BflVSDfll D Glflim a r w / / Logic-Level Power MOSFETs - RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L

F12N10L

Abstract: f12n10
Contextual Info: RFP12N10L S e m iconductor April 1999 Data Sheet 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET • 12A, 100V RFP12N10L PACKAGE TO-22QAB • r DS ON = 0.200i2 • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits

Contextual Info: J W S RFM12N08, RFM12N10, RFP12N08, RFP12N10 S em iconductor October 1998 Data Sheet 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

RFP12P10

Abstract: RFP12P08 TB334
Contextual Info: RFP12P08, RFP12P10 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers

RFP12N08

Abstract: TA9284 RFM12N08 RFM12N10 RFP12N10
Contextual Info: 3 8 7 5 0 8 1 G E S O L I D S T A T E 01 Standard Power M O S F E T s_ _ DE ,| 3Ô 7 S Ü Û 1 DOlfllSB 1 | _ RFM12N08, RFM12N10, RFP12N08, RFP12N10 File Number 1386 N-Channel Enhancement-Mode

F12N10L

Abstract: f12n10 TA09526 Logic Level N-Channel Power MOSFET AN7254 AN7260 RFP12N10L TB334
Contextual Info: RFP12N10L Data Sheet July 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as

Contextual Info: RFP12P08, RFP12P10 Semiconductor June 1999 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators,

RFP12N20

Abstract: RFP12N18 RFM12N18 RFM12N20
Contextual Info: ^01 DE I 3fl7SGfll OOiaiiS? =1 3875081 G E S O L I D S T A T E 01E 18157 D Standard Power MOSFETs-:- - RFM12N18, RFM12N20, RFP12N18, RFP12N20 File N u m b e r

12N6LE

Abstract: 12n06rle 12N6L AN9321 AN9322 RFD12N06RLE RFD12N06RLESM RFD12N06RLESM9A RFP12N06RLE TB334
Contextual Info: RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet January 2002 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN GATE DRAIN FLANGE DRAIN (FLANGE) GATE SOURCE RFD12N06RLE RFD12N06RLESM

F12N10L

Abstract: f12n10 RFP12N10L RFP12N10L equivalent AN7254 AN7260 TB334 833ig
Contextual Info: RFP12N10L Data Sheet January 2002 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as

Contextual Info: RFP12N10L October 2013 Data Sheet N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as

RFM12P10

Abstract: RFP12P10 12P10 RFM12P08 RFP12P08 TA9411 TA9410
Contextual Info: Standard Power MOSFETs RFM12P08, RFM12P10, RFP12P08, RFP12P10 F ile N u m b e r 1495 Power MOS Field-Elffect Transistors P-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM D 12 A , - 8 0 V a n d - 1 0 0 V rD s on = 0 .3 Q Features:

F12n10

Contextual Info: RFP12N10L Data Sheet April 2005 Features 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as

Contextual Info: RFP12P08, RFP12P10 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs Title The RFP12P08, and RFP12P10 are P-Channel FP1 enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, 08,

Contextual Info: w vys S RFM12N18, RFM12N20, RFP12N18, RFP12N20 Semiconductor y y 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 12A, 180V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

RFP12N06RLE

Abstract: RFD12N06RLE RFD12N06RLESM kos30
Contextual Info: HARRIS RFD12N06RLE, RFD12N06RLESM S E M I C O N D U C T O R January 1994 RFP12N06RLE N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Packages RFD12N06RLE (TO-251) TOP VIEW • 12A.60V • rDS(on) x 0.135Q Z3 SOURCE