Untitled
Abstract: No abstract text available
Text: RFP8P10 Data Sheet 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET Title This P-Channel enhancement mode silicon gate power field FP8 effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, 0 relay drivers, and drivers for high power bipolar switching
|
Original
|
PDF
|
RFP8P10
TA17511.
TB334
|
Untitled
Abstract: No abstract text available
Text: IRFF9130 Data Sheet Title FF9 0 bt A, 0V, 00 m, February 1999 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
|
Original
|
PDF
|
IRFF9130
-100V,
-100V
|
IRF9530 mosfet
Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs [ /Title These are P-Channel enhancement mode silicon gate power IRF95 field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified
|
Original
|
PDF
|
IRF9530,
RF1S9530SM
IRF95
530SM
IRF9530 mosfet
IRF9530
RF1S9530
RF1S9530SM
RF1S9530SM9A
TB334
|
RFP12P10
Abstract: RFP12P08 TB334
Text: RFP12P08, RFP12P10 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers
|
Original
|
PDF
|
RFP12P08,
RFP12P10
RFP12P10
TA17511.
RFP12P08
TB334
|
IRF9530 mosfet
Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334 JEDEC TO-263A IRF9530 fairchild
Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of
|
Original
|
PDF
|
IRF9530,
RF1S9530SM
TA17511.
IRF9530 mosfet
IRF9530
RF1S9530
RF1S9530SM
RF1S9530SM9A
TB334
JEDEC TO-263A
IRF9530 fairchild
|
TB334
Abstract: AN7254 RFP8P10
Text: RFP8P10 Data Sheet July 1999 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching
|
Original
|
PDF
|
RFP8P10
TB334
TA17511.
O-220AB
TB334
AN7254
RFP8P10
|
Untitled
Abstract: No abstract text available
Text: RFP12P08, RFP12P10 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs Title The RFP12P08, and RFP12P10 are P-Channel FP1 enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, 08,
|
Original
|
PDF
|
RFP12P08,
RFP12P10
RFP12P10
TA17511.
RFP12P08
O-220AB
|
65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
|
Original
|
PDF
|
1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
|
IRF9530
Abstract: dc motor 9v DATA SHEET IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
|
Original
|
PDF
|
IRF9530,
RF1S9530SM
TA17511.
IRF9530
dc motor 9v
DATA SHEET IRF9530
RF1S9530
RF1S9530SM
RF1S9530SM9A
TB334
|
IRFF9130
Abstract: No abstract text available
Text: IRFF9130 Data Sheet February 1999 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET File Number 2216.3 Features • -6.5A, -100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
|
Original
|
PDF
|
IRFF9130
-100V,
-100V
IRFF9130
|
IRFF9130
Abstract: No abstract text available
Text: IRFF9130 Data Sheet January 2002 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET Features • -6.5A, -100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
|
Original
|
PDF
|
IRFF9130
-100V,
-100V
IRFF9130
|
IRF9530
Abstract: IRF9531 IRF9530 mosfet
Text: S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate
|
Original
|
PDF
|
IRF9530,
IRF9531,
IRF9532,
IRF9533,
RF1S9530,
RF1S9530SM
-100V,
IRF9530
IRF9531
IRF9530 mosfet
|
rfp12p10
Abstract: rfp12p08 TB334 FAIRCHILD to220ab package
Text: RFP12P08, RFP12P10 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers
|
Original
|
PDF
|
RFP12P08,
RFP12P10
RFP12P10
TA17511.
rfp12p08
TB334
FAIRCHILD to220ab package
|
IRF9130
Abstract: gate driver for mosfet irf9130 IRF9130 mosfet power mosfets to 204aa TC.. 12A MOSFET Drivers gate drive for mosfet irf9130
Text: IRF9130 Data Sheet February 1999 -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
|
Original
|
PDF
|
IRF9130
-100V,
-100V
IRF9130
gate driver for mosfet irf9130
IRF9130 mosfet
power mosfets to 204aa
TC.. 12A MOSFET Drivers
gate drive for mosfet irf9130
|
|
|
AN7254
Abstract: RFP12P08 RFP12P10 TB334 TA17511
Text: RFP12P08, RFP12P10 Semiconductor June 1999 Data Sheet • 12A, 80V and 100V The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers
|
OCR Scan
|
PDF
|
80Vand
RFP12P08,
RFP12P10
TA17511.
RFP12P08
O-220AB
RFP12P08
RFP12P10
AN7254
TB334
TA17511
|
RFM8P08
Abstract: RFM8P10 RFP8P08 RFP8P10 TB334
Text: RFM8P08, RFM8P10, RFP8P08, RFP8P10 Semiconductor Data Sheet -8A, -80V and -100V, 0.400 Ohm, P-Channel Power MOSFETs October 1998 File Number 1496.1 Features • -8 A ,-8 0 V and -1 0 0 V These are P-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such
|
OCR Scan
|
PDF
|
RFM8P08,
RFM8P10,
RFP8P08,
RFP8P10
-100V,
TA17511.
RFM8P08
T0-204AA
RFM8P08
RFM8P10
RFP8P08
RFP8P10
TB334
|
Untitled
Abstract: No abstract text available
Text: H a r r IRFF9130, IRFF9131, IRFF9132, IRFF9133 i s s e m i c o n d u c t o r -5.5A and -6.5A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -5.5A and-6.5A ,-80V and-100V These are P-Channel enhancement mode silicon gate
|
OCR Scan
|
PDF
|
IRFF9130,
IRFF9131,
IRFF9132,
IRFF9133
-100V,
and-100V
|
irf9530
Abstract: irf9532 JEDEC TO-263A IRF9531
Text: H A F R F R IS S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate
|
OCR Scan
|
PDF
|
IRF9530,
IRF9531,
IRF9532,
IRF9533,
RF1S9530,
RF1S9530SM
-100V,
IRF9532
irf9530
JEDEC TO-263A
IRF9531
|
Untitled
Abstract: No abstract text available
Text: RFP12P08, RFP12P10 Semiconductor June 1999 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators,
|
OCR Scan
|
PDF
|
RFP12P08,
RFP12P10
RFP12P10
TA17511.
AN7254
AN7260
|
Untitled
Abstract: No abstract text available
Text: IRF9530, RF1S9530SM Semiconductor A p ril 1999 D ata S h eet -12A, -100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
|
OCR Scan
|
PDF
|
IRF9530,
RF1S9530SM
-100V,
|
f9530
Abstract: No abstract text available
Text: *f*53S IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V • High Input Impedance These are P-Channel enhancement mode silicon gate
|
OCR Scan
|
PDF
|
IRF9530,
IRF9531,
IRF9532,
IRF9533,
RF1S9530,
RF1S9530SM
-100V,
-100V
f9530
|
Untitled
Abstract: No abstract text available
Text: IRF9130, IRF9131, IRF9132, IRF9133 -10A and -12A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs July 1998 Description Features -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
|
OCR Scan
|
PDF
|
IRF9130,
IRF9131,
IRF9132,
IRF9133
-100V,
-100V
|