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    IRF52 Price and Stock

    Infineon Technologies AG IRF5210PBF

    MOSFET P-CH 100V 40A TO220AB
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    DigiKey IRF5210PBF Tube 6,643 1
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    Mouser Electronics IRF5210PBF 9,570
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    Newark IRF5210PBF Bulk 8,846 1
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    Bristol Electronics IRF5210PBF 49
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    TME IRF5210PBF 1,358 1
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    Chip1Stop IRF5210PBF Tube 4,677
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    IRF5210PBF 983
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    IRF5210PBF 352
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    CoreStaff Co Ltd IRF5210PBF 564
    • 1 $1.46
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    EBV Elektronik IRF5210PBF 22,000 11 Weeks 1,000
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    New Advantage Corporation IRF5210PBF 39,850 1
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    Win Source Electronics IRF5210PBF 67,800
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    Vishay Siliconix IRF520PBF-BE3

    MOSFET N-CH 100V 9.2A TO220AB
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    DigiKey IRF520PBF-BE3 Tube 3,415 1
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    Vishay Siliconix IRF520PBF

    MOSFET N-CH 100V 9.2A TO220AB
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    DigiKey IRF520PBF Tube 2,843 1
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    Infineon Technologies AG IRF5210STRLPBF

    MOSFET P-CH 100V 38A D2PAK
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    DigiKey IRF5210STRLPBF Reel 1,400 800
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    IRF5210STRLPBF Cut Tape 176 1
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    Avnet Americas IRF5210STRLPBF Reel 13,600 18 Weeks 800
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    IRF5210STRLPBF Ammo Pack 17 Weeks, 3 Days 1
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    Mouser Electronics IRF5210STRLPBF 13,416
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    TME IRF5210STRLPBF 312 1
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    Ameya Holding Limited IRF5210STRLPBF 13,563
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    ComSIT USA IRF5210STRLPBF 695
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    Chip 1 Exchange IRF5210STRLPBF 328
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    IRF5210STRLPBF 159
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    EBV Elektronik IRF5210STRLPBF 19 Weeks 800
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    Win Source Electronics IRF5210STRLPBF 59,684
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    Vishay Siliconix IRF520SPBF

    MOSFET N-CH 100V 9.2A D2PAK
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    DigiKey IRF520SPBF Tube 674 1
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    Find more IRF52 price and stock on Findchips.com

    IRF52 Datasheets (215)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF520 Fairchild Semiconductor 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET Original PDF
    IRF520 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF520 Intersil 9.2A, 100V, 0.270 ?, N-Channel Power MOSFET Original PDF
    IRF520 STMicroelectronics N-Channel 100 V - 0.115 ohm - 10 A TO-220 Low Gate Charge STripFETII Power MOSFET Original PDF
    IRF520 STMicroelectronics N-Channel ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF
    IRF520 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF520 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 9.2A TO-220AB Original PDF
    IRF520 Fairchild Semiconductor N-Channel Power MOSFETs, 11 A, 60-100 V Scan PDF
    IRF520 FCI POWER MOSFETs Scan PDF
    IRF520 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF520 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF520 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF520 International Rectifier HEXFET Power Mosfet Scan PDF
    IRF520 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF520 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRF520 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, 100V, 9.2A, Pkg Style TO-220AB Scan PDF
    IRF520 Motorola Switchmode Datasheet Scan PDF
    IRF520 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF520 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF520 Unknown FET Data Book Scan PDF
    ...

    IRF52 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Power MOSFETs Application Notes irf520

    Abstract: No abstract text available
    Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		PDF IRF520, SiHF520 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Power MOSFETs Application Notes irf520

    Untitled

    Abstract: No abstract text available
    Text: IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature


    Original     		PDF IRF520S, SiHF520S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRF520N

    Abstract: specifications Irf520N
    Text: PD - 91339A IRF520N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 1339A IRF520N O-220 IRF520N specifications Irf520N

    Untitled

    Abstract: No abstract text available
    Text: IRF5210 TO-220AB l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Power MOSFET Description D VDSS = -100V The TO-220 package is universally preferred for all


    Original     		PDF IRF5210 O-220AB -100V O-220

    IRF5210

    Abstract: SHD230452
    Text: SENSITRON SEMICONDUCTOR SHD230452 TECHNICAL DATA DATA SHEET 722, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.065 Ohm, -20A MOSFET œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRF5210 MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE


    Original     		PDF SHD230452 IRF5210 -250mA IRF5210 SHD230452

    IRF5210

    Abstract: No abstract text available
    Text: IRF5210 MECHANICAL DATA Dimensions in mm inches P–CHANNEL MOSFET IN A TO3 FOR HIGH RELIABILITY APPLICATIONS. 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )


    Original     		PDF IRF5210 00A/ms 300ms, IRF5210

    IRF5210

    Abstract: IRF5210S 1405B
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1405B IRF5210S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated


    Original     		PDF 1405B IRF5210S -100V IRF5210 IRF5210S 1405B

    irf5210s

    Abstract: No abstract text available
    Text: PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L


    Original     		PDF 7049A IRF5210SPbF IRF5210LPbF IRF5210S/L -100V O-262 EIA-418. irf5210s

    irf520 mosfet

    Abstract: SiHF520 IRF520 Power MOSFETs Application Notes irf520 SiHF520-E3 1IRF520
    Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		PDF IRF520, SiHF520 O-220 O-220 18-Jul-08 irf520 mosfet IRF520 Power MOSFETs Application Notes irf520 SiHF520-E3 1IRF520

    IRF5210

    Abstract: SHD225452
    Text: SENSITRON SEMICONDUCTOR SHD225452 TECHNICAL DATA DATA SHEET 4102, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.07 Ohm, -34A MOSFET œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRF5210 œ Add an “S” to the end of the part number for S-100 screening, SHD225452S


    Original     		PDF SHD225452 IRF5210 S-100 SHD225452S SHDC225452 IRF5210 SHD225452

    IRF520N

    Abstract: AN-994 IRF520NL IRF520NS
    Text: PD -91340A IRF520NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF520NS Low-profile through-hole (IRF520NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.20Ω G ID = 9.7A S


    Original     		PDF -91340A IRF520NS/L IRF520NS) IRF520NL) IRF520N AN-994 IRF520NL IRF520NS

    IRF5210

    Abstract: No abstract text available
    Text: PD - 95408 IRF5210PbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.06Ω G ID = -40A


    Original     		PDF IRF5210PbF -100V O-220 O-220AB. O-220AB IRF5210

    IRF5210L

    Abstract: IRF5210S
    Text: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-148-79 IRF5210S HEXFET D2Pak PD - 91405C IRF5210S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5210S


    Original     		PDF IRF5210S 91405C IRF5210S/L IRF5210S) IRF5210L) -100V IRF5210L

    IRF520NPBF

    Abstract: IRF1010 4.5v to 100v input regulator
    Text: PD - 94818 IRF520NPbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRF520NPbF O-220 O-220AB. O-220AB IRF1010 IRF520NPBF IRF1010 4.5v to 100v input regulator

    irf1010e equivalent

    Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
    Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N


    Original     		PDF O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent

    Untitled

    Abstract: No abstract text available
    Text: IRF523 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)8.0# I(DM) Max. (A) Pulsed I(D)5.6 @Temp (øC)100 IDM Max (@25øC Amb)32# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRF523

    Untitled

    Abstract: No abstract text available
    Text: IRF521 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)9.2# I(DM) Max. (A) Pulsed I(D)6.5 @Temp (øC)100 IDM Max (@25øC Amb)37# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRF521

    IRF520

    Abstract: International Rectifier IRF520 IRF52
    Text: PD-9.313K International S Rectifier IRF520 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1 0 0 V R DS on = 0 .2 7 Q


    OCR Scan     		PDF IRF520 0-27Q O-220 IRF520 International Rectifier IRF520 IRF52

    IRF50

    Abstract: irf521 irf520 pin configuration IRF521 irf522 irf523
    Text: ZETE X S E M I C O N D U C T O R S =ISI> D • ^70570 0 0 0 5 5 4 7 0 ■ ZETB 95D 0 5 5 4 7 N-channel enhancement mode vertical DMOS FET IRF520 IRF521 IRF522 IRF523 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


    OCR Scan     		PDF IRF520 IRF521 IRF522 IRF523 IRF620 IRF523 O-220 IRF50 pin configuration IRF521

    TO-22OAB

    Abstract: SD57a irf520n to22oab
    Text: PD-91339A International l ö R Rectifier IRF520N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100 V R D S o n = 0 . 2 0 Î 2 lD = 9.7A


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: International iMiRectifier P D - 9 .1 3 3 9 IRF520N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 1 0 0 V ^ D S o n = Id =


    OCR Scan     		PDF IRF520N 5S452 D023411

    Untitled

    Abstract: No abstract text available
    Text: International i ^ Reclifier PD91340 IRF520NS preliminary HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D escriptio n Fifth Generation HEXFETs from International Rectifier


    OCR Scan     		PDF IRF520NS

    Untitled

    Abstract: No abstract text available
    Text: IRF520A Advanced Power MOSFET FEATURES BVDSS - 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ^DS on = 0.2Í2 lD = 9-2 A ■ 175°C Operating Temperature


    OCR Scan     		PDF IRF520A QQ3b32fl 3b32ti O-220 7Tb4142 DD3b33D

    IRF520

    Abstract: irf521 IRF523 F522
    Text: N-CHANNEL POWER MOSFETS IRF520/521/522/523 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRF520/521/522/523 IRF520 IRF521 IRF522 IRF523 IRF520/5217522/523 F522