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Vishay Siliconix IRF620PBF-BE3 MOSFET N-CH 200V 5.2A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF620PBF-BE3	Tube	2,494		1	1 $1.71 10 $1.71 100 $1.71 1000 $0.52451 10000 $0.42363	Buy Now
Vishay Siliconix IRF620STRLPBF MOSFET N-CH 200V 5.2A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF620STRLPBF	Cut Tape	811		1	1 $2.78 10 $1.794 100 $2.78 1000 $2.78 10000 $2.78	Buy Now
	IRF620STRLPBF	Digi-Reel	811		1	1 $2.78 10 $1.794 100 $2.78 1000 $2.78 10000 $2.78	Buy Now
	IRF620STRLPBF	Reel	800		800	1 - 10 - 100 - 1000 $0.9413 10000 $0.82375	Buy Now
Vishay Siliconix IRF620STRRPBF MOSFET N-CH 200V 5.2A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF620STRRPBF	Reel	800		800	1 - 10 - 100 - 1000 $0.9413 10000 $0.82375	Buy Now
	IRF620STRRPBF	Digi-Reel	800		1	1 $2.78 10 $1.794 100 $2.78 1000 $2.78 10000 $2.78	Buy Now
	IRF620STRRPBF	Cut Tape	800		1	1 $2.78 10 $1.794 100 $2.78 1000 $2.78 10000 $2.78	Buy Now
Vishay Siliconix IRF620PBF MOSFET N-CH 200V 5.2A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF620PBF	Tube	586		1	1 $1.71 10 $1.71 100 $1.71 1000 $0.52451 10000 $0.42363	Buy Now
RS	IRF620PBF	Bulk			1,000	1 - 10 - 100 - 1000 $0.86 10000 $0.81	Get Quote
New Advantage Corporation	IRF620PBF		2,300		1	1 - 10 - 100 - 1000 $0.5071 10000 $0.4733	Buy Now
Vishay Siliconix IRF620 MOSFET N-CH 200V 5.2A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF620	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Quest Components	IRF620		395			1 $1.1 10 $1.1 100 $0.55 1000 $0.44 10000 $0.44	Buy Now

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IRF620 Datasheets (77)

Part	Manufacturer	Description	Datasheet Type	PDF
IRF620	Fairchild Semiconductor	5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET	Original	PDF
IRF620	Harris Semiconductor	Power MOSFET Selection Guide	Original	PDF
IRF620	International Rectifier	200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package	Original	PDF
IRF620	Intersil	5.0A, 200V, 0.800 ?, N-Channel Power MOSFET	Original	PDF
IRF620	STMicroelectronics	OLD PRODUCT:NOT SUITABLE FOR NEW DESIGN-IN	Original	PDF
IRF620	STMicroelectronics	N-Channel ENHANCEMENT MODE POWER MOS TRANSISTORS	Original	PDF
IRF620	STMicroelectronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 6A TO-220	Original	PDF
IRF620	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF620	Transys Electronics	Power MOSFET	Original	PDF
IRF620	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 5.2A TO-220AB	Original	PDF
IRF620	Fairchild Semiconductor	N-Channel Power MOSFETs, 7A, 150-200V	Scan	PDF
IRF620	FCI	POWER MOSFETs	Scan	PDF
IRF620	Frederick Components	Power MOSFET Selection Guide	Scan	PDF
IRF620	General Electric	Power Transistor Data Book 1985	Scan	PDF

IRF620	General Electric	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A.	Scan	PDF
IRF620	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRF620	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 200V, 5.9A, Pkg Iso TO-220 Fullpak	Scan	PDF
IRF620	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRF620	International Rectifier	TO-220 N-Channel HEXFET Power MOSFET	Scan	PDF
IRF620	Motorola	Switchmode Datasheet	Scan	PDF

IRF620 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching	Original	IRF620S, SiHF620S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
IRF620 Abstract: IRF620FP Text: IRF620 IRF620FP N-CHANNEL 200V - 0.6Ω - 6A TO-220/FP PowerMesh II MOSFET TYPE IRF620 IRF620FP • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 6A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK	Original	IRF620 IRF620FP O-220/FP O-220FP O-220 IRF620 IRF620FP	PDF
Untitled Abstract: No abstract text available Text: PD - 94870 IRF620PbF • Lead-Free 12/5/03 Document Number: 91027 www.vishay.com 1 IRF620PbF Document Number: 91027 www.vishay.com 2 IRF620PbF Document Number: 91027 www.vishay.com 3 IRF620PbF Document Number: 91027 www.vishay.com 4 IRF620PbF Document Number: 91027	Original	IRF620PbF O-220AB 08-Mar-07	PDF
Untitled Abstract: No abstract text available Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)	Original	IRF620, SiHF620 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
IRF620 application Abstract: IRF620 Text: IRF620 IRF620FP N-channel 200V - 0.6Ω - 6A TO-220/TO-220FP PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF620 200V <0.8Ω 6A IRF620FP 200V <0.8Ω 6A • Extremely high dv/dt capability ■ 100% avalanche tested ■ New high voltage benchmark	Original	IRF620 IRF620FP O-220/TO-220FP O-220 O-220FP IRF620FP IRF620 application	PDF
IRF620 application Abstract: IRF620 IRF620FP JESD97 Part Marking TO-220 STMicroelectronics Text: IRF620 IRF620FP N-channel 200V - 0.6Ω - 6A TO-220/TO-220FP PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF620 200V <0.8Ω 6A IRF620FP 200V <0.8Ω 6A • Extremely high dv/dt capability ■ 100% avalanche tested ■ New high voltage benchmark	Original	IRF620 IRF620FP O-220/TO-220FP O-220 O-220FP IRF620 application IRF620 IRF620FP JESD97 Part Marking TO-220 STMicroelectronics	PDF
IRF620 Abstract: No abstract text available Text: IRF620 IRF620FP N-CHANNEL 200V - 0.6Ω - 6A TO-220/FP PowerMesh II MOSFET TYPE IRF620 IRF620FP • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 6A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK	Original	O-220/FP IRF620 IRF620FP O-220 O-220FP O-220 P011C	PDF
Untitled Abstract: No abstract text available Text: PD - 94870 IRF620PbF • Lead-Free 1 IRF620PbF 2 IRF620PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)	Original	IRF620PbF O-220AB O-220AB.	PDF
Untitled Abstract: No abstract text available Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)	Original	IRF620, SiHF620 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Untitled Abstract: No abstract text available Text: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)	Original	IRF620, SiHF620 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
IRF620S Abstract: No abstract text available Text: IRF620S Power MOSFET VDSS = 200V, RDS on = 0.80 ohm, ID = 5.2 A D Drain G Gate Source S N Channel ELECTRICAL CHARACTERISICS at Parameter Tj = 25 C Maximum. Unless stated Otherwise IGSS Gate to Source Leakage Current VGS(th) Gate Threshold Voltage Gate Charge	Original	IRF620S 25VDC, 100VDC, 160VDC, 10VDC IRF620S	PDF
IRF620FI equivalent Abstract: IRF620 IRF620FI Text: IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 4A TYPICAL RDS(on) = 0.55 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	IRF620 IRF620FI 100oC O-220 ISOWATT220 IRF620FI equivalent IRF620 IRF620FI	PDF
Untitled Abstract: No abstract text available Text: IRF620 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)5.0# I(DM) Max. (A) Pulsed I(D)3.0 @Temp (øC)100 IDM Max (@25øC Amb)20# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40# Minimum Operating Temp (øC)-55õ	Original	IRF620	PDF
AN609 Abstract: IRF620S SiHF620S 12727 Text: IRF620S_RC, SiHF620S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	IRF620S SiHF620S AN609, 09-Mar-10 AN609 12727	PDF

IRF621 Abstract: IRF620 Text: ZETEX SEMICONDUCTORS JS]> D •=1=170570 OOOSSbS 3 ■ 95D 0 5 5 6 5 3 ^ 7/ IRF620 IRF621 IRF622 IRF623 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability	OCR Scan	IRF620 IRF621 IRF622 IRF623 O-220	PDF
D84CN2 Abstract: IRF620 RF620 Text: PUF IRF620.621 D84CN2.M2 5 AMPERES 200,150 VOLTS Rd s (ON = 0.8 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	IRF620 D84CN2 00A/jUsec, 300/js, 250MA, RF620	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC b4E D • 7Tbm42 GD12174 71b «SflG K N-CHANNEL POWER MOSFETS IRF620/621/622/623 FEATURES • • • • • • • Lower R d s ON Improved Inductive ruggedness Fast switching times R ugged polysilicon gate cell structure Lower input capacitance	OCR Scan	7Tbm42 GD12174 IRF620/621/622/623 IRF620 IRF621 IRF622 IRF623	PDF
IRF620A Abstract: No abstract text available Text: IRF620A Advanced Power M O SFET FEATURES — 200 V R u g g e d G a te O x id e T e c h n o lo g y ^ D S o n = 0.8 £2 • L o w e r In p u t C a p a c ita n c e lD = 5 A ■ Im p ro v e d G a te C h a rg e D S S ■ A v a la n c h e ■ R u g g e d T e c h n o lo g y	OCR Scan	IRF620A O-220 IRF620A	PDF
diode fr Abstract: IRF620A Text: IRF620A Advanced Power MOSFET FEATURES = 200 V ^DS on = 0 .8 £2 B ^D SS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 m A (M ax.) @ VDS= 200V	OCR Scan	IRF620A O-220 diode fr IRF620A	PDF
IRFP 620 Abstract: transistor 623 ir 623 p bem diode IRFP P CHANNEL IRF 024 Text: Æ 7 S C S IRF 620/FI-621/FI IRF 622/FI-623/FI T H O M S O N N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS on IRF620 IRF620FI 200 V 200 V 0.8 !2 0.8 Q 5 A 4 A IRF621 IRF621FI 150 V 150 V 0.8 Q 0.8 S2 5 A 4 A IRF622 IRF622FI 200 V 200 V	OCR Scan	620/FI-621/FI 622/FI-623/FI IRF620 IRF620FI IRF621 IRF621FI IRF622 IRF622FI IRF623 IRF623FI IRFP 620 transistor 623 ir 623 p bem diode IRFP P CHANNEL IRF 024	PDF
Untitled Abstract: No abstract text available Text: No. IRF620 IRF621 IRF623 MTP7N18 IRF720 IRF723 MTP3N35 MTP3N40 IRF820 IRF622 IRF823 MTP2N45 MTP2N50 Cm 600 300 80 B3 2.5 15 600 300 80 B3 1.2 2.5 15 600 300 80 B3 0.25 1.2 2.5 15 600 300 80 B3 4.5 1 0.7 3.5 15 600 300 80 B3 2 4.5 1 0.7 3.5 15 600 300 80 2	OCR Scan	IRF620 IRF621 IRF622 IRF623 MTP7N18 MTP7N20 IRF720 IRF721 IRF722 IRF723	PDF
Untitled Abstract: No abstract text available Text: IRF620 Semiconductor D ata S h eet June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET 1577.3 Features • 5.0A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	OCR Scan	IRF620	PDF
Untitled Abstract: No abstract text available Text: ¿ 5 S G S -T H O M S O N ¡m e r a « 7 IR F620 IR F 620 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V dss IRF620 IRF620FI 200 V 200 V RDS on < 0.8 < 0.8 a a Id 6 A 4 A • TYPICAL RDS(on) = 0.55 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED	OCR Scan	IRF620 IRF620FI IRF620/FI ISQWATT220	PDF
Untitled Abstract: No abstract text available Text: N-CHANNEL POWER MOSFETS IRF620/621 FEATURES • • • • • • • Lower R d sio n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	IRF620/621 IRF620 IRF621 7Tb4142	PDF

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IRF620 Datasheets (77)

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IRF620

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IRF620 application

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IRF620

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IRF620S

IRF620FI equivalent

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AN609

IRF621

D84CN2

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IRF620A

diode fr

IRFP 620

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