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    IRF621 Search Results

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    IRF621 Price and Stock

    Rochester Electronics LLC IRF621

    N-CHANNEL POWER MOSFET
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    DigiKey IRF621 Bulk 13,250 701
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    Rochester Electronics LLC IRF621R

    N-CHANNEL POWER MOSFET
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    DigiKey IRF621R Bulk 6,837 701
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    Infineon Technologies AG IRF6215S

    MOSFET P-CH 150V 13A D2PAK
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    DigiKey IRF6215S Tube 550
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    Infineon Technologies AG AUIRF6215

    MOSFET P-CH 150V 13A TO220AB
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    DigiKey AUIRF6215 Tube 1,000
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    Newark AUIRF6215 Bulk 31 1
    • 1 $2.22
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    Rochester Electronics AUIRF6215 980 1
    • 1 $2.02
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    • 100 $1.9
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    Infineon Technologies AG IRF6218PBF

    MOSFET P-CH 150V 27A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF6218PBF Tube
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    Newark IRF6218PBF Bulk 1
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    Rochester Electronics IRF6218PBF 1
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    Win Source Electronics IRF6218PBF 5,001
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    IRF621 Datasheets (77)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF621 Fairchild Semiconductor N-Channel Power MOSFETs, 7A, 150-200V Scan PDF
    IRF621 FCI POWER MOSFETs Scan PDF
    IRF621 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF621 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF621 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. Scan PDF
    IRF621 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF621 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRF621 Motorola Switchmode Datasheet Scan PDF
    IRF621 Motorola European Master Selection Guide 1986 Scan PDF
    IRF621 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRF621 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF621 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF621 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF621 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF621 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF621 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF621 Unknown FET Data Book Scan PDF
    IRF621 National Semiconductor N-Channel Power MOSFETs Scan PDF
    IRF621 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    IRF621 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Scan PDF

    IRF621 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF6215

    Abstract: No abstract text available
    Text: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier


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    PDF 91479B IRF6215 -150V O-220 IRF6215

    irf6217trpbf

    Abstract: AN 9525.2
    Text: PD - 95252 SMPS MOSFET IRF6217PbF HEXFET Power MOSFET Applications Reset Switch for Active Clamp Reset DC to DC converters l Lead-Free VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See


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    PDF IRF6217PbF -150V AN1001) IRF6217 15-Nov-2010 irf6217trpbf AN 9525.2

    AN1001

    Abstract: IRF6218
    Text: PD - 95862 IRF6218 SMPS MOSFET HEXFET Power MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters RDS on max -150V 150m:@VGS = -10V l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including


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    PDF IRF6218 -150V AN1001) O-220AB IRF1010 -520A/ AN1001 IRF6218

    IRF6218

    Abstract: AN1001 marking code 27a
    Text: PD - 95862 IRF6218 SMPS MOSFET HEXFET Power MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters RDS on max -150V 150m:@VGS = -10V l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including


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    PDF IRF6218 -150V AN1001) O-220AB IRF1010 -520A/ IRF6218 AN1001 marking code 27a

    Untitled

    Abstract: No abstract text available
    Text: PD - 95132 IRF6215S/LPbF • Lead-Free www.irf.com 1 4/21/05 IRF6215S/LPbF 2 www.irf.com IRF6215S/LPbF www.irf.com 3 IRF6215S/LPbF 4 www.irf.com IRF6215S/LPbF www.irf.com 5 IRF6215S/LPbF 6 www.irf.com IRF6215S/LPbF www.irf.com 7 IRF6215S/LPbF D2Pak Package Outline


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    PDF IRF6215S/LPbF F530S EIA-418.

    Untitled

    Abstract: No abstract text available
    Text: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier


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    PDF 91479B IRF6215 -150V O-220 appl245,

    Untitled

    Abstract: No abstract text available
    Text: PD - 94817 IRF6215PbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -150V RDS on = 0.29Ω G Description ID = -13A S Fifth Generation HEXFETs from International Rectifier


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    PDF IRF6215PbF -150V O-220 O-220AB. O-220AB IRF1010

    Untitled

    Abstract: No abstract text available
    Text: IRF6216PbF-1 HEXFET Power MOSFET VDS -150 RDS on max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) V 0.24 Ω 33 nC -2.2 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques


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    PDF IRF6216PbF-1 IRF6216TRPbF-1 D-020D

    IRF 504

    Abstract: irf 418
    Text: PD - 95132 IRF6215S/LPbF • Lead-Free 1 IRF6215S/LPbF 2 IRF6215S/LPbF D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF 530S WIT H LOT CODE 8024 AS SEMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INTERNAT IONAL RECTIF IER LOGO ASS EMBLY


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    PDF IRF6215S/LPbF F530S EIA-418. IRF 504 irf 418

    AN1001

    Abstract: IRF 860
    Text: PD -95441 SMPS MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free IRF6218PbF HEXFET Power MOSFET RDS on max -150V 150m:@VGS = -10V l Benefits l l l ID -27A D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including


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    PDF IRF6218PbF -150V AN1001) O-220AB O-220AB -520A/ AN1001 IRF 860

    Untitled

    Abstract: No abstract text available
    Text: PD -95441 SMPS MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free IRF6218PbF HEXFET Power MOSFET RDS on max -150V 150m:@VGS = -10V l Benefits l l l ID -27A D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including


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    PDF IRF6218PbF -150V AN1001) O-220AB -520A/Â

    IRF AN1001

    Abstract: IRF6218S AN1001 IRF6218L IRF6218S-l
    Text: PD - 95863A IRF6218S IRF6218L SMPS MOSFET HEXFET Power MOSFET Applications l VDSS Reset Switch for Active Clamp Reset DC-DC converters RDS on max -150V 150m:@VGS = -10V ID -27A Benefits l l l Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including


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    PDF 5863A IRF6218S IRF6218L -150V AN1001) O-262 AN-994. IRF AN1001 IRF6218S AN1001 IRF6218L IRF6218S-l

    IRF6216

    Abstract: AN1001 9429
    Text: PD - 94297 IRF6216 SMPS MOSFET HEXFET Power MOSFET Applications Reset Switch for Active Clamp Reset DC-DC converters VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See


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    PDF IRF6216 AN1001) -150V IA-48 IRF6216 AN1001 9429

    IRF6217

    Abstract: AN1001
    Text: PD - 94359 IRF6217 SMPS MOSFET HEXFET Power MOSFET Applications Reset Switch for Active Clamp Reset DC to DC converters VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See


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    PDF IRF6217 AN1001) -150V IA-48 IRF6217 AN1001

    F7101

    Abstract: EIA-541 IRF7101
    Text: IRF6217PbF SO-8 Package Outline Dimensions are shown in millimeters inches D 5 A 8 7 6 5 6 H 0.25 [.010] 1 2 3 A 4 MAX MIN .0532 .0688 1.35 1.75 A1 .0040 e e1 .0098 0.10 0.25 .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574


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    PDF IRF6217PbF EIA-481 EIA-541. F7101 EIA-541 IRF7101

    Untitled

    Abstract: No abstract text available
    Text: PD - 96181 SMPS MOSFET IRF6218SPbF IRF6218LPbF HEXFET Power MOSFET Applications l Reset Switch for Active Clamp Reset DC-DC converters VDSS RDS on max -150V 150m:@VGS = -10V ID -27A Benefits l l l l Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including


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    PDF IRF6218SPbF IRF6218LPbF -150V AN1001) O-262 -520A/Â AN-994.

    Untitled

    Abstract: No abstract text available
    Text: PD - 91643 IRF6215S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF6215S l Low-profile through-hole (IRF6215L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS(on) = 0.29Ω


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    PDF IRF6215S/L IRF6215S) IRF6215L) -150V

    Untitled

    Abstract: No abstract text available
    Text: PD - 95863A IRF6218S IRF6218L SMPS MOSFET HEXFET Power MOSFET Applications l Reset Switch for Active Clamp Reset DC-DC converters VDSS RDS on max -150V 150m:@VGS = -10V ID -27A Benefits l l l Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including


    Original
    PDF 5863A IRF6218S IRF6218L -150V AN1001) O-262 AN-994.

    Untitled

    Abstract: No abstract text available
    Text: PD - 95862 IRF6218 SMPS MOSFET HEXFET Power MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters RDS on max -150V 150m:@VGS = -10V l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including


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    PDF IRF6218 -150V AN1001) O-220AB IRF1010 -520A/Â

    IRF621

    Abstract: IRF620
    Text: ZETEX SEMICONDUCTORS *JS]> D •=1=170570 OOOSSbS 3 ■ 95D 0 5 5 6 5 3 ^* 7/ IRF620 IRF621 IRF622 IRF623 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


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    PDF IRF620 IRF621 IRF622 IRF623 O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 91643 International IGR Rectifier IRF6215S/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology Surface Mount IRF6215S Low-profile through-hole (IRF6215L) 1 7 5 °C O perating Tem perature Fast Switching P-Channel Fully Avalanche Rated


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    PDF IRF6215S/L IRF6215S) IRF6215L)

    Untitled

    Abstract: No abstract text available
    Text: P D -9 1 4 7 9 B International Iör Rectifier IRF6215 HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Description V dss = •"! 50V RüS on = 0.29Î2


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    PDF IRF6215

    IRFP 620

    Abstract: transistor 623 ir 623 p bem diode IRFP P CHANNEL IRF 024
    Text: Æ 7 S C S IRF 620/FI-621/FI IRF 622/FI-623/FI T H O M S O N N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS on IRF620 IRF620FI 200 V 200 V 0.8 !2 0.8 Q 5 A 4 A IRF621 IRF621FI 150 V 150 V 0.8 Q 0.8 S2 5 A 4 A IRF622 IRF622FI 200 V 200 V


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    PDF 620/FI-621/FI 622/FI-623/FI IRF620 IRF620FI IRF621 IRF621FI IRF622 IRF622FI IRF623 IRF623FI IRFP 620 transistor 623 ir 623 p bem diode IRFP P CHANNEL IRF 024

    Untitled

    Abstract: No abstract text available
    Text: No. IRF620 IRF621 IRF623 MTP7N18 IRF720 IRF723 MTP3N35 MTP3N40 IRF820 IRF622 IRF823 MTP2N45 MTP2N50 Cm 600 300 80 B3 2.5 15 600 300 80 B3 1.2 2.5 15 600 300 80 B3 0.25 1.2 2.5 15 600 300 80 B3 4.5 1 0.7 3.5 15 600 300 80 B3 2 4.5 1 0.7 3.5 15 600 300 80 2


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    PDF IRF620 IRF621 IRF622 IRF623 MTP7N18 MTP7N20 IRF720 IRF721 IRF722 IRF723