Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    100V SINGLE P-CHANNEL HEXFET MOSFET Search Results

    100V SINGLE P-CHANNEL HEXFET MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    100V SINGLE P-CHANNEL HEXFET MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    IRF P-Channel FET 100v

    Abstract: 68A diode IR 200V P-Channel fets k 68a irf P-Channel MOSFET audio IRFG5210 4.5v to 100v input regulator
    Text: Preliminary Data Sheet No. PD - 9.1664 HEXFET TRANSISTORS IRFG5210 COMBINATION N AND P CHANNEL 2 EACH Ω (N and P channel ) HEXFET 200 Volt, 1.60Ω Product Summary The HEXFET technology is the key to International Rectifier’s Part Number advanced line of power MOSFET transistors. The efficient


    Original     		PDF IRFG5210 MO-036AB IRF P-Channel FET 100v 68A diode IR 200V P-Channel fets k 68a irf P-Channel MOSFET audio IRFG5210 4.5v to 100v input regulator

    marking code V6 33 surface mount diode

    Abstract: marking code V6 31 surface mount diode IRF7350 IRF7350P Dual N P-Channel
    Text: PD - 94226B IRF7350 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel S1 G1 S2 G2 N - C H A N N EL M O S FE T 1 8 2 7 D1 3 6 D2 4 5 D2 P -C H A N N E L M O S F E T N-Ch P-Ch VDSS 100V


    Original     		PDF 94226B IRF7350 -100V IRF7350 IRF7350PBF IRF7350TR marking code V6 33 surface mount diode marking code V6 31 surface mount diode IRF7350P Dual N P-Channel

    Untitled

    Abstract: No abstract text available
    Text: PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE MO-036AB HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5210 IRFG5210 RDS(on) 1.6Ω 1.6Ω ID 0.68A -0.68A CHANNEL N P HEXFET® MOSFET technology is the key to International


    Original     		PDF 91664B IRFG5210 MO-036AB) 276mH, 475mH, -200V, MO-036AB

    68A diode

    Abstract: MJ 68A IRFG5210 MO-036AB 4.5v to 100v input regulator
    Text: PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE MO-036AB HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5210 IRFG5210 RDS(on) 1.6Ω 1.6Ω ID 0.68A -0.68A CHANNEL N P HEXFET® MOSFET technology is the key to International


    Original     		PDF 91664B IRFG5210 MO-036AB) 276mH, 475mH, -200V, MO-036AB 68A diode MJ 68A IRFG5210 MO-036AB 4.5v to 100v input regulator

    P-channel N-Channel power mosfet SO-8

    Abstract: IRF7350PBF IRF7350
    Text: PD - 95367 IRF7350PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Top View N-Ch P-Ch VDSS 100V


    Original     		PDF IRF7350PbF -100V EIA-481 EIA-541. P-channel N-Channel power mosfet SO-8 IRF7350PBF IRF7350

    100V Single P-Channel HEXFET MOSFET

    Abstract: 12v 10A dc motor mosfet driver
    Text: PD-90436G IRFG6110 JANTX2N7336 JANTXV2N7336 POWER MOSFET REF:MIL-PRF-19500/598 THRU-HOLE MO-036AB 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG6110 IRFG6110 RDS(on) 0.7Ω 1.4Ω ID CHANNEL 1.0A N -0.75A P HEXFET® MOSFET technology is the key to International


    Original     		PDF PD-90436G IRFG6110 JANTX2N7336 JANTXV2N7336 MIL-PRF-19500/598 MO-036AB) 150mH, 266mH, 100V Single P-Channel HEXFET MOSFET 12v 10A dc motor mosfet driver

    Untitled

    Abstract: No abstract text available
    Text: PD-90436G IRFG6110 JANTX2N7336 JANTXV2N7336 POWER MOSFET REF:MIL-PRF-19500/598 THRU-HOLE MO-036AB 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG6110 IRFG6110 RDS(on) 0.7Ω 1.4Ω ID CHANNEL 1.0A N -0.75A P HEXFET® MOSFET technology is the key to International


    Original     		PDF PD-90436G IRFG6110 JANTX2N7336 JANTXV2N7336 MIL-PRF-19500/598 MO-036AB) 266mH, -75A/Â

    IRF7350

    Abstract: f-7101
    Text: PD - 94226B IRF7350 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel S1 G1 S2 G2 N - C H A N N EL M O S FE T 1 8 2 7 D1 3 6 D2 4 5 D2 P -C H A N N E L M O S F E T N-Ch P-Ch VDSS 100V


    Original     		PDF 94226B IRF7350 -100V IRF7350 f-7101

    IRFP60A

    Abstract: 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413
    Text: powireview The Technology Update for People in Power New HEXFET MOSFETs for Every Power Supply Application IR Chip Set First to Meet Newest Notebook PC Power Standard New P-Channel HEXFET® Power MOSFETs Offer Best Performance for Low Voltage Circuits New Schottky Diodes


    Original     		PDF O-220 Q101-Compliant IRFP60A 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413

    p channel mosfet 100v

    Abstract: 100V Single p-Channel MOSFET KRF7350 n-channel 100v 100A 100V Single P-Channel HEXFET MOSFET P-channel MOSFET VGS -25V 15a 50v p-channel mosfet Dual N P-Channel 100V 100v P-Channel MOSFET P-channel MOSFET 50V, 10 A rds
    Text: IC IC SMD Type HEXFET Power MOSFET KRF7350 Features Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit VDS 100 -100 V ID 2.1 -1.5 Continuous Drain Current Ta = 70


    Original     		PDF KRF7350 -100A/ p channel mosfet 100v 100V Single p-Channel MOSFET KRF7350 n-channel 100v 100A 100V Single P-Channel HEXFET MOSFET P-channel MOSFET VGS -25V 15a 50v p-channel mosfet Dual N P-Channel 100V 100v P-Channel MOSFET P-channel MOSFET 50V, 10 A rds

    2N7236U

    Abstract: smd 2f IRFN9140 JANTX2N7236U JANTXV2N7236U
    Text: PD-91553C IRFN9140 JANTX2N7236U JANTXV2N7236U HEXFET POWER MOSFET [REF:MIL-PRF-19500/595] P - CHANNEL Ω MOSFET -100 Volt, 0.20Ω Product Summary ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry


    Original     		PDF PD-91553C IRFN9140 JANTX2N7236U JANTXV2N7236U MIL-PRF-19500/595] 2N7236U smd 2f IRFN9140 JANTX2N7236U JANTXV2N7236U

    Untitled

    Abstract: No abstract text available
    Text: PD - 90437D POWER MOSFET THRU-HOLE MO-036AB IRFG5110 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5110 IRFG5110 RDS(on) 0.7Ω 0.7Ω ID 1.0A -1.0A CHANNEL N P HEXFET® MOSFET technology is the key to International


    Original     		PDF 90437D MO-036AB) IRFG5110 150mH, -100V, MO-036AB

    IRFG6110

    Abstract: JANTX2N7336 JANTXV2N7336 MO-036AB 90436
    Text: PD - 90436F POWER MOSFET THRU-HOLE MO-036AB IRFG6110 JANTX2N7336 JANTXV2N7336 REF:MIL-PRF-19500/598 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG6110 IRFG6110 RDS(on) 0.7Ω 1.4Ω ID CHANNEL 1.0A N -0.75A P


    Original     		PDF 90436F MO-036AB) IRFG6110 JANTX2N7336 JANTXV2N7336 MIL-PRF-19500/598 150mH, IRFG6110 JANTX2N7336 JANTXV2N7336 MO-036AB 90436

    Untitled

    Abstract: No abstract text available
    Text: PD - 96113A IRF7452QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free Description These HEXFET® Power MOSFET's in SO-8


    Original     		PDF 6113A IRF7452QPbF EIA-481 EIA-541.

    Untitled

    Abstract: No abstract text available
    Text: PD - 96113 IRF7452QPbF SMPS MOSFET HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free Description


    Original     		PDF IRF7452QPbF EIA-541.

    EIA-541

    Abstract: F7101 IRF7101
    Text: PD - 96113A IRF7452QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free Description These HEXFET® Power MOSFET's in SO-8


    Original     		PDF 6113A IRF7452QPbF EIA-481 EIA-541. EIA-541 F7101 IRF7101

    SMD-220

    Abstract: smd diode mj 19 DT SMD SMD220 g10 smd AN-994 IRF9540S power mosfet smd package SMD g10 AN994
    Text: PD - 9.917A IRF9540S HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P Channel 175°C Operating Temperature Fast Switching D VDSS = -100V RDS on = 0.20Ω G ID = -19A S Description


    Original     		PDF IRF9540S -100V SMD-220 AN-994. smd diode mj 19 DT SMD SMD220 g10 smd AN-994 IRF9540S power mosfet smd package SMD g10 AN994

    Untitled

    Abstract: No abstract text available
    Text: PD- 94226A IRF7350 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 N -C H A N N E L M O S F ET 1 8 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 N-Ch P-Ch 100V -100V RDS on 0.21Ω 0.48Ω D1 VDSS


    Original     		PDF 4226A IRF7350 -100V

    IRHE9110

    Abstract: IRHE93110 LCC-18
    Text: PD-97180 RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 IRHE9110 100V - P CHANNEL RAD-HardTM HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE9110 100K Rads (Si) IRHE93110 300K Rads (Si) RDS(on) ID 1.1Ω -2.3A 1.1Ω -2.3A LCC - 18


    Original     		PDF PD-97180 LCC-18) IRHE9110 IRHE93110 -100V, -12volt MIL-STD-750, -80volt MlL-STD-750, IRHE9110 IRHE93110 LCC-18

    Untitled

    Abstract: No abstract text available
    Text: PD-97180 RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 IRHE9110 100V - P CHANNEL RAD-HardTM HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE9110 100K Rads (Si) IRHE93110 300K Rads (Si) RDS(on) ID 1.1Ω -2.3A 1.1Ω -2.3A LCC - 18


    Original     		PDF PD-97180 LCC-18) IRHE9110 IRHE93110 -100V, -12volt MIL-STD-750, -80volt MlL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: INTE RNATIONAL RECTIFIER 2bE D • HflSSMSS OülOlfi? Q ■ Government/ Space Products T-39-ôl International ^¡Rectifier Radiation Hard HEXFETs N-Channel V d s Drain Part Number Source Voltage Volts On-sitata Resistance (Ohms) IRHN7150 IRHN8150 IRHN7250


    OCR Scan     		PDF T-39-Ã IRHN7150 IRHN8150 IRHN7250 IRHN8250 IRHN7450 IRHN8450 IRHE7110 IRHE8110 IRHE7130

    Untitled

    Abstract: No abstract text available
    Text: International i« i Rectifier Data Sheet No. 1.037 Series PVT422 HEXFET PO W ER M O SFET PHOTOVOLTAIC RELAY Microelectronic Power IC Relay Dual Pole, Normally Open 0-400V, 120mA AC/DC General Description PVT422 Features The PVT422 Series Photovoltaic Relay is a


    OCR Scan     		PDF PVT422 120mA PVT422 4A55452

    IRF520 application note

    Abstract: IRF52Q Irf520 spice irf522 AN975 A44B irf521
    Text: HE D I Data Sheet No. PD-9.313J 40 55 4 5 5 □□00 44 2 2 | T-39-11 INTERNATIONAL RE CT IFIER INTERNATIONAL RECTIFIER I I O R I REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF52Q IRFS21


    OCR Scan     		PDF T-39-11 IRF52Q IRFS21 IRFS23 T0-220AB C-197 IRF520, IRF521, IRF522, IRF523 IRF520 application note Irf520 spice irf522 AN975 A44B irf521