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    0120d

    Abstract: No abstract text available
    Text: RDRAM 512Mb 1024Kx16/18x32s Advance Information Overview The RDRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.


    Original     		PDF 512Mb 1024Kx16/18x32s) 800MHz 1600MHz 625ns DL-0205-01 0120d

    N16T1618C2A

    Abstract: N16T1625C2A N16T1630C2A 1024Kx16bit
    Text: NanoAmp Solutions, Inc. 1982B Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N16T1630C2 1 A N16T1625C2(1)A N16T1618C2(1)A Advance 1024Kx16bit Ultra-Low Power Asynchronous Static RAM Overview Features The N16T1630C2A, N16T1625C2A


    Original     		PDF 1982B N16T1630C2 N16T1625C2 N16T1618C2 1024Kx16bit N16T1630C2A, N16T1625C2A N16T1618C2A N16T1625C2A N16T1630C2A

    Untitled

    Abstract: No abstract text available
    Text: LY62102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.3 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION


    Original     		PDF LY62102616 1024K 48-pin

    xxxxxxxxx

    Abstract: No abstract text available
    Text: LY62L102616A Rev. 1.1 16M Bits 2Mx8 / 1Mx16 Switchable LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Description Initial Issue Correct typo error on the column “UB#”, “LB#” of truth table for row “Byte Read” “Byte Write” and “Output Disable” at


    Original     		PDF LY62L102616A 1Mx16 LY62L102616ALL-55SLT LY62L102616ALL-55SL LY62L102616ALL-70SLIT xxxxxxxxx

    Untitled

    Abstract: No abstract text available
    Text:  LY61L102516A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.2 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issued Added LY61L102516AGL Revised IOH/IOL = -8mA/4mA to IOH/IOL = -4mA/8mA in AC TEST CONDITIONS Lyontek Inc. reserves the rights to change the specifications and products without notice.


    Original     		PDF LY61L102516A 1024K LY61L102516AGL LY61L102516AML-10 LY61L102516AML-10T LY61L102516AML-10I LY61L102516AML-10IT LY61L102516AGL-10

    Untitled

    Abstract: No abstract text available
    Text: LY62L102516 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Rev. 1.0 Description Initial Issue Added SL Spec. Added ISB1/IDR values when TA = 25℃ and TA = 40℃ Revised FEATURES & ORDERING INFORMATION


    Original     		PDF LY62L102516 1024K LY62L102516GL-55SLT LY62L102516GL-55SL LY62L102516GL-70LLIT

    Untitled

    Abstract: No abstract text available
    Text: LY62L102516A 1024K x 16 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Description Initial Issue Issue Date Jan. 09. 2012 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.


    Original     		PDF LY62L102516A 1024K LY62L102516A 216-bit 48-pin

    TK 69 TSOP

    Abstract: 1024KX16 M5M4V16169RT-10 1-OF-128 7WB1 AD011 M5M4V16169TP-10
    Text: MITSUBISHI LSIs TARGET SPEC REV. 2.0 M5M4V16169RT-10,-12,-15 16MCDRAM:16M(1024K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec. and some of the contents are subject to change without notice.


    Original     		PDF M5M4V16169RT-10 16MCDRAM 1024K-WORD 16-BIT) 1024-WORD M5M4V16169TP 16M-bit 576-word 16-bit TK 69 TSOP 1024KX16 1-OF-128 7WB1 AD011 M5M4V16169TP-10

    Untitled

    Abstract: No abstract text available
    Text: IS62/65WV102416DALL IS62/65WV102416DBLL 1Mx16 LOW VOLTAGE, ULTRA LOW POWER & LOW POWER CMOS STATIC RAM KEY FEATURES •       ADVANCED INFORMATION JULY 2013 DESCRIPTION High-speed access time: 45ns, 55ns. CMOS low power operation Maximum standby current: 12 A


    Original     		PDF IS62/65WV102416DALL IS62/65WV102416DBLL 1Mx16 IS62/65WV102416DALL) IS62/65WV102416DBLL) IS62/65WV102416DALL, IS62/65WV102416DBLL 16Mbit 48pin IS62WV102416DBLL-45TI

    Untitled

    Abstract: No abstract text available
    Text: IS62/65WV102416DALL IS62/65WV102416DBLL 1Mx16 LOW VOLTAGE, ULTRA LOW POWER & LOW POWER CMOS STATIC RAM KEY FEATURES •       ADVANCED INFORMATION JULY 2013 DESCRIPTION High-speed access time: 45ns, 55ns. CMOS low power operation Maximum standby current: 12 A


    Original     		PDF IS62/65WV102416DALL IS62/65WV102416DBLL 1Mx16 IS62/65WV102416DALL) IS62/65WV102416DBLL) IS62/65WV102416DALL, IS62/65WV102416DBLL 16Mbit 48pin IS62WV102416DBLL-45TI

    WS512K32V-XXX

    Abstract: No abstract text available
    Text: White Electronic Designs WS512K32V-XXX ADVANCED* 512Kx32 SRAM 3.3V MODULE FEATURES „ Access Times of 70, 85, 100, 120ns „ TTL Compatible Inputs and Outputs „ Packaging „ Low Voltage Operation: • 66-pin, PGA Type, 1.185 inch square, Hermetic Ceramic HIP Package 401


    Original     		PDF WS512K32V-XXX 512Kx32 120ns 66-pin, WS512K32V-XG2TX WS512K32V-XHX 512Kx32; 1024Kx16 512Kx32 WS512K32V-XXX

    AS7C316098B

    Abstract: No abstract text available
    Text: AS7C316098B 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Confidential Description Initial Issued Issue Date June 2014 Rev1.0 – June 2014 AS7C316098B 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.0 FEATURES GENERAL DESCRIPTION


    Original     		PDF AS7C316098B 1024K 54-pin AS7C316098B 16M-R

    WS512K32-XXX

    Abstract: smd A018
    Text: WS512K32-XXX 512Kx32 SRAM MODULE, SMD 5962-94611 PRELIMINARY* FEATURES • Access Times of 70, 85, 100, 120ns ■ Commercial, Industrial and Military Temperature Ranges ■ Packaging ■ TTL Compatible Inputs and Outputs • 66-pin, PGA Type, 1.185 inch square, Hermetic


    Original     		PDF WS512K32-XXX 512Kx32 120ns 66-pin, 04HZX 01HMX 100ns 02HMX WS512K32-XXX smd A018

    Untitled

    Abstract: No abstract text available
    Text: LY62102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 1.1 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Rev. 1.0 Rev. 1.1 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package


    Original     		PDF LY62102616 1024K 2102616LL-55LLT LY62102616LL-70LLT LY62102616LL-70LLI LY62102616LL-55LL LY62102616LL-70LLIT

    WS512K32V-XXX

    Abstract: ah55
    Text: WS512K32V-XXX HI-RELIABILITY PRODUCT 512Kx32 SRAM 3.3V MODULE ADVANCED* FEATURES • Access Times of 70, 85, 100, 120ns ■ Low Voltage • 3.3V ±10% Power Supply ■ Packaging ■ Low Power CMOS • 66-pin, PGA Type, 1.185 inch square, Hermetic Ceramic HIP Package 401


    Original     		PDF WS512K32V-XXX 512Kx32 120ns 66-pin, WS512K32V-XG2TX WS512K32V-XHX 512Kx32, 1024Kx16 development20 WS512K32V-XXX ah55

    Untitled

    Abstract: No abstract text available
    Text: IS62/65WV102416DALL IS62/65WV102416DBLL PRELIMINARY INFORMATION FEBRUARY 2014 1Mx16 LOW VOLTAGE, ULTRA LOW POWER & LOW POWER CMOS STATIC RAM KEY FEATURES •       DESCRIPTION High-speed access time: 45ns, 55ns. CMOS low power operation Maximum standby current: 12 A


    Original     		PDF IS62/65WV102416DALL IS62/65WV102416DBLL 1Mx16 IS62/65WV102416DALL) IS62/65WV102416DBLL) IS62/65WV102416DALL, IS62/65WV102416DBLL 16Mbit 48pin IS62WV102416DBLL-45TI

    Untitled

    Abstract: No abstract text available
    Text: LY62L102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.2 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION


    Original     		PDF LY62L102616 1024K LY62L102616 216-bit 48-pin

    xxxxxxxxx

    Abstract: No abstract text available
    Text: LY62L102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 1.0 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION


    Original     		PDF LY62L102616 1024K 102616LL-70LLI LY62L102616LL-55LLT LY62L102616LL-55LL LY62L102616LL-70LLIT xxxxxxxxx

    Untitled

    Abstract: No abstract text available
    Text: WS512K32-XXX M/HITE /M ICROELECTRONICS 512Kx32 SRAM MODULE PRELIMINARY* Organized as 512Kx32, U se r C o n fig u ra b le as 1024Kx16 or 2 M x8 C o m m ercial, Industrial and M ilita r y T em peratu re R anges FEATURES TTL C o m p atib le Inputs and O utputs


    OCR Scan     		PDF WS512K32-XXX 512Kx32 512Kx32, 1024Kx16 10HXX*

    Untitled

    Abstract: No abstract text available
    Text: ca WS512K32-XXX M/HITE /M IC R O E LE C TR O N IC S 512Kx32 SRAM MODULE p r e l im in a r y * • O rganized as 51 2Kx32, U se r C o n fig u ra b le as 1024Kx16 or 2M x8 ■ Co m m ercial, Industrial and M ilita r y T em peratu re R anges FEATU R ES ■ TTL C o m p atib le Inputs and O utputs


    OCR Scan     		PDF WS512K32-XXX 512Kx32 2Kx32, 1024Kx16 120nS 66-pin, 01HXX* 100nS 02HXX*

    Untitled

    Abstract: No abstract text available
    Text: ça W S512K32-XXX WHITE /MICROELECTRONICS 512Kx32 SRAM MODULE, SMD 5962-94611 P R E L IM IN A R Y * FEATURES • A cce ss Times of 70, 8 5 ,1 0 0 ,120ns ■ Commercial, Industrial and Military Temperature Ranges ■ Packaging ■ TTL Compatible Inputs and Outputs


    OCR Scan     		PDF S512K32-XXX 512Kx32 120ns 66-pin, 01HZX 100ns 02HZX 03HZX 04HZX

    Untitled

    Abstract: No abstract text available
    Text: a WS512K32-XXX WHITE /M ICROELECTRONICS 512Kx32 SRAM MODULE PRELIMINARY* FEATURES • A cce ss Tim es of 70, 8 5 , 1 0 0 , 120nS ■ ■ Packaging ■ TTL C o m p a tib le Inputs and O utputs • 6 6 - p i n , PGA Type, 1.385 inch square, H erm etic C eram ic HIP Package 402 , S M D N u m b e r 5962-9461 1


    OCR Scan     		PDF WS512K32-XXX 512Kx32 120nS 04HZX 01HMX 100nS 02HMX 03HMX 04HMX

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is TARGET SPEC REV. 2.0 M5M4V16169RT-10,-12,-15 16MCDRAM:16M(1024K-WQRD BY 16-BIT) CACHED DRAM WITH 16K (1024-WQRD BY 16-BIT) SRAM P relim in ary This document is a preliminary Target Spec, and some of the contents are subject to change without notice.


    OCR Scan     		PDF M5M4V16169RT-10 16MCDRAM 1024K-WQRD 16-BIT) 1024-WQRD 16169TP 576-w 16-bit

    Untitled

    Abstract: No abstract text available
    Text: REV22 MITSUBISHI LSIs M5M4V16169RT-10,-12,-15 16M C D R A M :16M (1024K -W Q R D BY 16-BIT) CACHED DRAM W ITH 16K (1024-W Q RD BY 16-BIT) SRAM DESCRIPTION The M 5M 4V16169R T is a 16M-bit Cached DRAM which integrates input registers, a 1,048,576-word by 16-bit dynamic memory array and a 1024


    OCR Scan     		PDF REV22) M5M4V16169RT-10 1024K 16-BIT) 024-W 4V16169R 16M-bit 576-word 16-bit