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3M Interconnect P51-050P-SR1-EA Board to Board & Mezzanine Connectors PAK50 CONNECTOR/ROHS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	P51-050P-SR1-EA					1 - 10 - 100 - 1000 $4.42 10000 $3.87	Get Quote
IKO International Inc LRX45R1050HS2 (LRX45R1050PS2) Linear Roller Way, 1050 mm Rail, High Accuracy Grade, To assemble with MXC45, M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	LRX45R1050HS2 (LRX45R1050PS2)	Bulk			1	1 $732.36 10 $732.36 100 $732.36 1000 $732.36 10000 $732.36	Get Quote
IKO International Inc LRX45R1050PS2 (LRX45R1050HS2) Linear Roller Way, 1050 mm Rail, Precision Accuracy Grade, To assemble with MXC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	LRX45R1050PS2 (LRX45R1050HS2)	Bulk			1	1 $831.2 10 $831.2 100 $831.2 1000 $831.2 10000 $831.2	Get Quote
IKO International Inc LRX45R1050PS2/HP (LRX45R1050HS2/HP) Linear Roller Way, 1050 mm Rail, Half Pitch Specification, Precision Accuracy G
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	LRX45R1050PS2/HP (LRX45R1050HS2/HP)	Bulk			1	1 $875.18 10 $875.18 100 $875.18 1000 $875.18 10000 $875.18	Get Quote
IKO International Inc LRX45R1050HS2/HP (LRX45R1050PS2/HP) Linear Roller Way, 1050 mm Rail, Half Pitch Specification, High Accuracy Grade,
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	LRX45R1050HS2/HP (LRX45R1050PS2/HP)	Bulk			1	1 $795.57 10 $795.57 100 $795.57 1000 $795.57 10000 $795.57	Get Quote

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1050PS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
F100K Abstract: SY100S304 SY100S304FC SY100S304JC SY100S304JCTR Text: QUINT AND/NAND GATE FEATURES SY100S304 DESCRIPTION • Max. propagation delay of 1050ps ■ IEE min. of –60mA ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved noise immunity ■ Internal 75KΩ input pull-down resistors	Original	SY100S304 1050ps F100K 24-pin 28-pin SY100S304 SY100S304FC F24-1 SY100S304JC J28-1 F100K SY100S304FC SY100S304JC SY100S304JCTR	PDF
Marking D1c Abstract: F100K SY100S304 SY100S304JC SY100S304JCTR Text: QUINT AND/NAND GATE Micrel, Inc. FEATURES SY100S304 SY100S304 DESCRIPTION • Max. propagation delay of 1050ps ■ IEE min. of –60mA ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved noise immunity	Original	SY100S304 1050ps F100K 28-pin SY100S304 M9999-042307 Marking D1c F100K SY100S304JC SY100S304JCTR	PDF
Untitled Abstract: No abstract text available Text: QUINT AND/NAND GATE Micrel, Inc. FEATURES SY100S304 SY100S304 DESCRIPTION • Max. propagation delay of 1050ps ■ IEE min. of –60mA ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved noise immunity	Original	SY100S304 1050ps F100K 24-pin 28-pin SY100S304 M9999-032206	PDF
d2b 1 Abstract: SY100S304 F100K SY100S304FC SY100S304JC SY100S304JCTR Text: QUINT AND/NAND GATE FEATURES SY100S304 FINAL DESCRIPTION • Max. propagation delay of 1050ps ■ IEE min. of –60mA ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved noise immunity ■ Internal 75KΩ input pull-down resistors	Original	SY100S304 1050ps F100K 24-pin 28-pin SY100S304 0S304FC F24-1 SY100S304JC J28-1 d2b 1 F100K SY100S304FC SY100S304JC SY100S304JCTR	PDF
E142 wafer format Abstract: HEL32 MR 4710 IC 300w power amplifier circuit diagram HEL05 klt22 HEL12 HEL31 HEL16 HLT22 HLT28 Text: DL140/D Rev. 6, Jan-2001 High Performance ECL Data ECLinPS and ECLinPS Lite™ High Performance ECL Device Data ECLinPS, ECLinPS Lite, and Low Voltage ECLinPS DL140/D Rev. 6, Jan–2001  SCILLC, 2001 Previous Edition  2000 “All Rights Reserved”	Original	DL140/D Jan-2001 r14525 E142 wafer format HEL32 MR 4710 IC 300w power amplifier circuit diagram HEL05 klt22 HEL12 HEL31 HEL16 HLT22 HLT28	PDF
EDE5108AJSE-6E-E Abstract: EDE5104AJSE EDE5104AJSE-8E-E EDE5108AJSE EDE5116AJSE ELPIDA DDR2 SDRAM Text: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5104AJSE 128M words x 4 bits EDE5108AJSE (64M words × 8 bits) EDE5116AJSE (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization  32M words × 4 bits × 4 banks (EDE5104AJSE)	Original	EDE5104AJSE EDE5108AJSE EDE5116AJSE EDE5104AJSE) EDE5108AJSE) EDE5116AJSE) 60-ball EDE5104/08AJSE) 84-ball EDE5108AJSE-6E-E EDE5104AJSE EDE5104AJSE-8E-E EDE5108AJSE EDE5116AJSE ELPIDA DDR2 SDRAM	PDF
DDR2-667 Abstract: DDR2-800 EDE5108AJBG-8E-E EBE11UD8AJUA-6E-E SSTL-18 Text: PRELIMINARY DATA SHEET 1GB DDR2 SDRAM SO-DIMM EBE11UD8AJUA 128M words x 64 bits, 2 Ranks Specifications Features • Density: 1GB • Organization ⎯ 128M words × 64 bits, 2 ranks • Mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 200-pin socket type small outline dual in	Original	EBE11UD8AJUA 200-pin 800Mbps/667Mbps M01E0107 E1083E10 DDR2-667 DDR2-800 EDE5108AJBG-8E-E EBE11UD8AJUA-6E-E SSTL-18	PDF
DDR2-667 Abstract: EDE5104AJSE-8E-E udqs Text: PRELIMINARY DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE21AD4AJFA 256M words x 72 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 2 ranks • Mounting 36 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory	Original	EBE21AD4AJFA 240-pin 667Mbps cycles/64ms M01E0706 E1041E20 DDR2-667 EDE5104AJSE-8E-E udqs	PDF
DDR2-667 Abstract: DDR2-800 EDE1108ACSE-6E-E Text: DATA SHEET 2GB Unbuffered DDR2 SDRAM DIMM EBE21UE8ACFA 256M words x 64 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 64 bits, 2 ranks • Mounting 16 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory	Original	EBE21UE8ACFA 240-pin 800Mbps/667Mbps cycles/64ms M01E0706 E1057E20 DDR2-667 DDR2-800 EDE1108ACSE-6E-E	PDF
EDE5116AHSE Abstract: No abstract text available Text: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5108AHSE 64M words x 8 bits EDE5116AHSE (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization ⎯ 16M words × 8 bits × 4 banks (EDE5108AHSE) ⎯ 8M words × 16 bits × 4 banks (EDE5116AHSE)	Original	EDE5108AHSE EDE5116AHSE EDE5108AHSE) EDE5116AHSE) 60-ball 84-ball 800Mbps/667Mbps/533Mbps/400Mbps EDE5116AHSE	PDF
DDR2-667 Abstract: EDE5104AJSE-8E-E EBE10AD4AJFA-6E-E max1546 Text: PRELIMINARY DATA SHEET 1GB Registered DDR2 SDRAM DIMM EBE10AD4AJFA 128M words x 72 bits, 1 Rank Specifications Features • Density: 1GB • Organization  128M words × 72 bits, 1 rank • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory	Original	EBE10AD4AJFA 240-pin 667Mbps cycles/64ms M01E0706 E1039E20 DDR2-667 EDE5104AJSE-8E-E EBE10AD4AJFA-6E-E max1546	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET 1G bits DDR2 SDRAM EDE1108AJBG-1 128M words x 8 bits EDE1116AJBG-1 (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization  16M words × 8 bits × 8 banks (EDE1108AJBG)  8M words × 16 bits × 8 banks (EDE1116AJBG)	Original	EDE1108AJBG-1 EDE1116AJBG-1 EDE1108AJBG) EDE1116AJBG) 60-ball 84-ball 1066Mbps	PDF
cl 1100 Abstract: CL-8A SY100E445 SY10E445 SY10E445JC Text: 4-BIT SERIAL-to-PARALLEL CONVERTER FEATURES DESCRIPTION • On-chip clock ÷4 and ÷8 The SY10/100E445 are integrated 4-bit serial-to-parallel data converters. The devices are designed to operate for NRZ data rates of up to 2.5Gb/s. The chip generates a divide-by-4 and a divide-by-8 clock for both 4-bit conversion	Original	SY10/100E445 SY10E445JCTR J28-1 SY100E445JC SY100E445JCTR SY10E445 SY100E445 J28-1) cl 1100 CL-8A SY100E445 SY10E445 SY10E445JC	PDF
DDR2 SDRAM component Abstract: DDR2-800 E1295E40 Text: DATA SHEET 1GB Unbuffered DDR2 SDRAM DIMM EBE10UE8AEFA 128M words x 64 bits, 1 Rank Specifications Features • Density: 1GB • Organization  128M words × 64 bits, 1 rank • Mounting 8 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory	Original	EBE10UE8AEFA 240-pin EBE10UE8AEFA-xx-E) EBE10UE8AEFA-xx-F) 800Mbps/667Mbps M01E0706 E1295E40 DDR2 SDRAM component DDR2-800 E1295E40	PDF

DDR2 DIMM 240 pin names Abstract: DDR2-667 EDE5104AJSE-8E-E EBE21AD4AJFA-6E-E EBE21AD4AJFA 2843ps Text: DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE21AD4AJFA 256M words x 72 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 2 ranks • Mounting 36 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory	Original	EBE21AD4AJFA 240-pin 667Mbps cycles/64ms M01E0706 E1041E30 DDR2 DIMM 240 pin names DDR2-667 EDE5104AJSE-8E-E EBE21AD4AJFA-6E-E EBE21AD4AJFA 2843ps	PDF
DDR2-667 Abstract: EDE1108ACSE-6E-E Text: DATA SHEET 4GB Registered DDR2 SDRAM DIMM EBE42AE8ACFA 512M words x 72 bits, 4 Ranks Specifications Features • Density: 4GB • Organization  512M words × 72 bits, 4 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory	Original	EBE42AE8ACFA 240-pin 667Mbps cycles/64ms M01E0706 E1206E10 DDR2-667 EDE1108ACSE-6E-E	PDF
E0901E20 Abstract: EBE41AE4ABHA DDR2-667 Text: DATA SHEET 4GB Registered DDR2 SDRAM DIMM EBE41AE4ABHA 512M words x 72 bits, 2 Ranks Specifications Features • Density: 4GB • Organization  512M words × 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM with sFBGA • Package: 240-pin socket type dual in line memory	Original	EBE41AE4ABHA 240-pin 667Mbps cycles/64ms M01E0706 E0901E20 E0901E20 EBE41AE4ABHA DDR2-667	PDF
EDE1116ACSE-6E-E Abstract: DDR2-667 DDR2-800 EDE1116ACSE-8E-E DDR2 sodimm pcb layout Text: DATA SHEET 1GB DDR2 SDRAM SO-DIMM EBE11UE6ACSA 128M words x 64 bits, 2 Ranks Specifications Features • Density: 1GB • Organization  128M words × 64 bits, 2 ranks • Mounting 8 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 200-pin socket type small outline dual in	Original	EBE11UE6ACSA 200-pin 800Mbps/667Mbps cycles/64ms M01E0706 E1045E20 EDE1116ACSE-6E-E DDR2-667 DDR2-800 EDE1116ACSE-8E-E DDR2 sodimm pcb layout	PDF
Untitled Abstract: No abstract text available Text: * QUINT AN D/N A N D GATE SY100S304 SEMICONDUCTOR FEATURES DESCRIPTION Max. propagation delay of 1050ps Iee min. o f-60 m A Extended supply voltage option: V ee = -4.2V to -5.5V T he S Y 1 0 0 S 3 0 4 is an ultra-fast quint A N D /N A N D gate designed for use in high-perform ance ECL systems. This	OCR Scan	SY100S304 1050ps F100K 24-pin	PDF
Untitled Abstract: No abstract text available Text: « SYNERGY QUINT AND/NAND GATE SY100S304 SEMICONDUCTOR FEATURES DESCRIPTION Max. propagation delay of 1050ps Ie e The SY100S304 is an ultra-fast quint AND/NAND gate designed for use in high-perform ance ECL system s. This device also features a Function F output which is the wireNOR of the AND gate outputs. The inputs on the device	OCR Scan	SY100S304 1050ps SY100S304 75Ki2	PDF
Untitled Abstract: No abstract text available Text: * QUINT AND/NAND GATE SYNERGY SY100S304 SEMICONDUCTOR FEATURES DESCRIPTION Max. propagation delay of 1050ps The SY100S 304 is an ultra-fast quint AN D /N AN D gate designed for use in high-perform ance ECL system s. This device also fe a ture s a Function F output which is the w ireNOR of the AND gate outputs. T he inputs on the device	OCR Scan	SY100S304 1050ps SY100S 75KC1 TDD13B1 SY100S304DC D24-1 SY100S304FC F24-1	PDF
Untitled Abstract: No abstract text available Text: * QUINT AND/NAND GATE SYNERGY SY100S304 SEMICONDUCTOR FEATURES DESCRIPTION Max. propagation delay of 1050ps Iee min. o f-6 0 m A Extended supply voltage option: V ee = -4 .2 V to -5 .5 V The SY100S304 is an ultra-fast quint AND/NAND gate designed for use in high-performance ECL systems. This	OCR Scan	SY100S304 1050ps SY100S304 75Ki2	PDF
F100K Abstract: SY100S304 SY100S304DC SY100S304FC SY100S304JC Text: * S Y N E R G Y q u in t a n d /n a n d g a t e sy-io o s304 S E M IC O N D U C T O R FEATURES DESCRIPTION I Max. propagation delay of 1050ps I I e e min. o f-60m A The SY 100S 304 is an ultra-fast quint AN D /N AN D gate designed fo r use in high-perform ance ECL system s. This	OCR Scan	SY100S304 1050ps of-60mA F100K SY100S304 TD013Ã SY100S304DC D24-1 SY100S304FC F100K SY100S304JC	PDF
Untitled Abstract: No abstract text available Text: <o> ai 1m CmC i m w lC m m m •v i 00 S 304 “-.j U I N î AimD' N A N D i j A î E ^JSS W S E M /C O N D U C T O P m ssM FEA TU R E S The SY100S304 is an ultra-fast quint AND/NAND gate designed for use in high-performance ECL systems. This device also features a Function F output which is the wireNOR of the AND gate outputs. The inputs on the device	OCR Scan	1050ps SY100S304 75Ki2 F10QK 304FC SY100S 304JC D24-1 F24-1	PDF

1050PS Search Results

1050PS Price and Stock

3M Interconnect P51-050P-SR1-EA

IKO International Inc LRX45R1050HS2 (LRX45R1050PS2)

IKO International Inc LRX45R1050PS2 (LRX45R1050HS2)

IKO International Inc LRX45R1050PS2/HP (LRX45R1050HS2/HP)

IKO International Inc LRX45R1050HS2/HP (LRX45R1050PS2/HP)

1050PS Datasheets Context Search

F100K

Marking D1c

Untitled

d2b 1

E142 wafer format

EDE5108AJSE-6E-E

DDR2-667

DDR2-667

DDR2-667

EDE5116AHSE

DDR2-667

Untitled

cl 1100

DDR2 SDRAM component

DDR2 DIMM 240 pin names

DDR2-667

E0901E20

EDE1116ACSE-6E-E

Untitled

Untitled

Untitled

Untitled

F100K

Untitled