ASTM F1249
Abstract: ASTM D2103 EIA-583 F1249 F-1249 MIL-D-3464 JEDEC J-STD-033b F1249-90 ESD S11.11 MIL-D-3464 1 unit size
Text: TECHNICAL BULLETIN TB-2031 Statshield Moisture Barrier Bags Application Instructions Made in the United States of America Construction Desco’s Statshield® Moisture Barrier Bags manufactured from a static dissipative metalized laminated film. The metal layer of the Desco’s
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TB-2031
TB-2031
ASTM F1249
ASTM D2103
EIA-583
F1249
F-1249
MIL-D-3464
JEDEC J-STD-033b
F1249-90
ESD S11.11
MIL-D-3464 1 unit size
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WEDPN4M64V-XBX
Abstract: No abstract text available
Text: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s
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WEDPN4M64V-XBX
4Mx64
125MHz
32MByte
256Mb)
216-bit
100MHz
WEDPN4M64V-XBX
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Untitled
Abstract: No abstract text available
Text: WEDPN8M64V-XBX HI-RELIABILITY PRODUCT 8Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with
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WEDPN8M64V-XBX
8Mx64
125MHz
WEDPN8M64V-XBX
64MByte
512Mb)
100MHz
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Untitled
Abstract: No abstract text available
Text: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a
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WEDPN4M64V-XBX
4Mx64
125MHz
WEDPN4M64V-XBX
32MByte
256Mb)
100MHz
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WEDPN16M64V-XBX
Abstract: WEDPN8M64V-XBX
Text: WEDPN8M64V-XBX 8Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125, 133*MHz ■ Package: • 219 Plastic Ball Grid Array PBGA , 25 x 25mm The 64MByte (512Mb) SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing
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WEDPN8M64V-XBX
8Mx64
64MByte
512Mb)
432-bit
100MHz
125MHz
133MHz*
133MHz
WEDPN16M64V-XBX
WEDPN8M64V-XBX
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ICS87322BI
Abstract: ICS87322I MC100LVE222
Text: ICS87322BI Integrated Circuit Systems, Inc. LOW SKEW, ÷1/÷2, 3.3V LVPECL/ECL CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS87322BI is a low skew, ÷1/÷2 3.3V LVPECL/ ECL Clock Generator and a member of the HiPerClockS HiPerClockS™ family of High Performance Clock
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ICS87322BI
ICS87322BI
750MHz
ICS87322I
MC100LVE222
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN8M64V-XBX 8Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125, 133*MHz ■ Package: • 219 Plastic Ball Grid Array PBGA , 25 x 25mm The 64MByte (512Mb) SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing
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8Mx64
WEDPN8M64V-XBX
WEDPN8M64V-XBX
64MByte
512Mb)
100MHz
125MHz
133MHz*
133MHz
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Untitled
Abstract: No abstract text available
Text: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM ADVANCED* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a
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WEDPN4M64V-XBX
4Mx64
125MHz
32MByte
256Mb)
216-bit
100MHz
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APP3992
Abstract: DS2786 "fuel gauge" AN3992
Text: Maxim/Dallas > App Notes > BATTERY MANAGEMENT POWER-SUPPLY CIRCUITS Keywords: OCV, Open Circuit Voltage, Fuel Gauge, OCV Fuel Gauge Jan 26, 2007 APPLICATION NOTE 3992 Interpreting the Open-Circuit-Voltage OCV Fuel Gauge of the DS2786 Abstract: The DS2786 is an open-circuit-voltage (OCV) based fuel gauge that reports the total energy that is
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DS2786
DS2786
CapacityDS2786
com/an3992
DS2786:
AN3992,
APP3992,
Appnote3992,
APP3992
"fuel gauge"
AN3992
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s
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4Mx64
125MHz
WEDPN4M64V-XBX
WEDPN4M64V-XBX
32MByte
256Mb)
100MHz
125MHz
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN4M64V-XBX FINAL* 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a
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WEDPN4M64V-XBX
4Mx64
32MByte
256Mb)
216-bit
125MHz
co219
100MHz
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TA0232A
Abstract: 1090mhz 1090mhz filter saw 1090 MA05497 saw filter 1090MHz
Text: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 1090MHz Part No: MA05497 Model: TA0232A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: 0dBm 2. DC voltage: 0V
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1090MHz
MA05497
TA0232A
1096MHz
1096MHz
924MHz
944MHz
1051MHz
1061MHz
20Tel:
TA0232A
1090mhz
1090mhz filter
saw 1090
MA05497
saw filter 1090MHz
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Untitled
Abstract: No abstract text available
Text: ICS87322BI Integrated Circuit Systems, Inc. LOW SKEW, ÷1/÷2, 3.3V LVPECL/ECL CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS87322BI is a low skew, ÷1/÷2 3.3V LVPECL/ECL Clock Generator and a member of HiPerClockS the HiPerClockS™ family of High Performance
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750MHz
180ps
500ps
ICS87322BI
ICS87322BI
87322BYI
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Untitled
Abstract: No abstract text available
Text: WEDPN8M64V-XBX HI-RELIABILITY PRODUCT 8Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with
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WEDPN8M64V-XBX
8Mx64
125MHz
WEDPN8M64V-XBX
64MByte
512Mb)
100MHz
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MW antenna
Abstract: la1060 multi vibrator circuit LA1061M MFP14S signal antenna Diagram
Text: Ordering number : EN3044A Monolithic Linear IC 1061M Antenna Switching Controller Overview Package Dimensions The 1061M is an antenna switching controller for mobile radio equipment. The 1061M uses a number of inputs from the receiver circuitry to select the main antenna or sub-antenna
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EN3044A
LA1061M
LA1061M
LA1060
MW antenna
multi vibrator circuit
MFP14S
signal antenna Diagram
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN3044A Monolithic Linear IC 1061M Antenna Switching Controller Overview Package Dimensions The 1061M is an antenna switching controller for mobile radio equipment. The 1061M uses a number of inputs from the receiver circuitry to select the main antenna or sub-antenna
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EN3044A
LA1061M
LA1061M
LA1060
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Mys 99 178
Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Text: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B
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AA994896G
2A-M18KS08-WP-C1
1234C
11PFA
14PFA
1001D
VAP21001C
VAP21004H
VAP21015C
2001G
Mys 99 178
MYS 99
cj1w-cort21
NT31C-ST143-Ev3
MYS 99 133
E5CS-R1KJ
8203-M
TL-X1R
4503m
st MYS 99 102
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WEDPN4M64V-XBX
Abstract: No abstract text available
Text: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a
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WEDPN4M64V-XBX
4Mx64
125MHz
32MByte
256Mb)
216-bit
100MHz
WEDPN4M64V-XBX
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Untitled
Abstract: No abstract text available
Text: WEDPN8M64V-XBX HI-RELIABILITY PRODUCT 8Mx64 Synchronous DRAM ADVANCED* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with
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WEDPN8M64V-XBX
8Mx64
125MHz
64MByte
512Mb)
432-bit
100MHz
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Untitled
Abstract: No abstract text available
Text: ICS87322BI LOW SKEW, ÷1/÷2, 2.5V/3.3V DIFFERENTIAL-TO-LVPECL/ECL CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS87322BI is a low skew, ÷1/÷2 Differential-to-2.5V/3.3V LVPECL/ECL Clock Generator HiPerClockS and a member of the HiPerClockS™ family of High
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750MHz
180ps
500ps
MC100LVE222
ICS87322BI
ICS87322BI
87322BYI
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PDF
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s
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4Mx64
125MHz
WEDPN4M64V-XBX
WEDPN4M64V-XBX
32MByte
256Mb)
100MHz
125MHz
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Untitled
Abstract: No abstract text available
Text: um LI NE AR T E C H N O L O G Y CORP 43E D • SS104b. f i QQQ5SE3 b «LTC LTC1061 M/883 and LTC1061 AM/883 TECHNOLOGY DESCRIPTION The LTC1061/883 consists of three high perfor mance, universal filter building blocks. Each filter building block together with an external clock and 2
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SS104b.
LTC1061
M/883
AM/883
LTC1061/883
28kHz.
MIL-STD-883
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21502a
Abstract: TMC1061 TMC1061B3B TMC1061B3F
Text: TMC1061 110-Bit High-Speed Microprocessor-Compatible A/D Converter with Track/Hold Employing a "half-flash" A/D conversion technique, the TMC1061 CMOS 10-bit A/D converter offers high-speed conversions while dissipating only 235 m illiwatts. The analog input signal to the TMC1061 is tracked and held by
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TMC1061
110-Bit
TMC1061
10-bit
200kHz
TMC1061E1C
21502a
TMC1061B3B
TMC1061B3F
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c1061
Abstract: but c1061
Text: r#?lrV TMC1061 10-Bit High-Speed Microprocessor-Compatible A/D Converter with Track/Hold Features Employing a "half-flash" A/D conversion technique, the TMC1061 CMOS 10-bit A/D converter offers high-speed conversions w hile dissipating only 235 m illiwatts. The
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TMC1061
10-Bit
TMC1061
200kHz
c1061
but c1061
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