2N2222A bjt
Abstract: 74 standard TTL bjt 2n2222a ttl logic gates IRHLUB7970Z4 TTL logic gate Drive Base BJT IRHLUB770Z4 mosfet p channel irf LM139 APPLICATION
Text: Application Note AN-1067 Design Considerations When Using RadiationHardened Small Signal Logic Level MOSFETs Table of Contents Page Introduction . 1 Acronyms. 1
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AN-1067
AN-937.
AN-944.
AN-936.
2N2222A bjt
74 standard TTL
bjt 2n2222a
ttl logic gates
IRHLUB7970Z4
TTL logic gate
Drive Base BJT
IRHLUB770Z4
mosfet p channel irf
LM139 APPLICATION
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Untitled
Abstract: No abstract text available
Text: ^£.m.L-donaactoi Lproducti., Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUX25 NPN SILICON POWER TRANSISTOR 25.15(0.99] 26.67(1,05) 1067 (0.42) 11.18(0.44} 1,52(006) 343(0135) FEATURES
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BUX25
O-204AE
10MHz
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smd transistor marking j6
Abstract: 6227CAZ SMD TRANSISTOR MARKING by 4p SMD TRANSISTOR MARKING 3p smd transistor marking j8 SMD TRANSISTOR MARKING 6B smd transistor marking j5 transistor 5d smd SMD TRANSISTOR MARKING 5c smd transistor 5c
Text: ISL6227EVAL2Z Dual Switcher Evaluation Board Setup Procedure Application Note This document describes the setup procedure for the ISL6227 Evaluation Board dual switcher implementation. For information about the DDR application, please refer to Application Note 1067, “ISL6227EVAL1 DDR Evaluation
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ISL6227EVAL2Z
ISL6227
ISL6227EVAL1
AN1068
smd transistor marking j6
6227CAZ
SMD TRANSISTOR MARKING by 4p
SMD TRANSISTOR MARKING 3p
smd transistor marking j8
SMD TRANSISTOR MARKING 6B
smd transistor marking j5
transistor 5d smd
SMD TRANSISTOR MARKING 5c
smd transistor 5c
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Untitled
Abstract: No abstract text available
Text: Application Note 1067 Application Notes for AP3770 System Solution Prepared by Su Qing Hua System Engineering Dept. Regulation PSR . AP3770 has the special technique to suppress the audio noise, internal line compensation to reduce the number of system components, fixed cable
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AP3770
AP3770,
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Untitled
Abstract: No abstract text available
Text: MwT-H16 28 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 241 72 50 35 52 52 35 35 52 35 1067 52 35 52 35 50 • 28 dBm POWER OUTPUT AT 12 GHz • 11 dB GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE
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MwT-H16
MwT-H16
equa75
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SOLAR TRANSISTOR
Abstract: High Power Microwave Device
Text: MwT-H16 32 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 241 72 50 35 52 52 35 35 52 35 1067 52 35 52 35 50 • 28 dBm POWER OUTPUT AT 12 GHz • 11 dB GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE
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MwT-H16
MwT-H16
SOLAR TRANSISTOR
High Power Microwave Device
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smd transistor M28 sot23
Abstract: ISL6225A CAP ELL 10UF SMD panasonic MSL level smd diode 5d isl6227caz smd diode 1d SMD Transistor 5f 4d SMD Transistor panasonic Radial lead MSL level
Text: ISL6227EVAL1 DDR Evaluation Board Setup Procedure Application Note This document describes the setup procedure for the ISL6227 Evaluation Board DDR implementation. For information about the dual switcher application, please refer to the ISL6227EVAL2 Evaluation Board Setup Procedure.
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ISL6227EVAL1
ISL6227
ISL6227EVAL2
300kHz
TMK432BJ106MM-T
SPC02SYAN
BAT54WT1-T
SSL-LXA3025IGC-TR
smd transistor M28 sot23
ISL6225A
CAP ELL 10UF SMD
panasonic MSL level
smd diode 5d
isl6227caz
smd diode 1d
SMD Transistor 5f
4d SMD Transistor
panasonic Radial lead MSL level
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melf diode marking
Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
Text: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish
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5KE100A-B
5KE100A-T
5KE100CA-B
5KE100CA-T
5KE10A-A
5KE10A-B
5KE10A-T
5KE10CA-B
5KE10CA-T
5KE110A-B
melf diode marking
A180-WLA
RS503s
SBR130S3
Schottky melf
hall sensor 35l
5KE91A-B
PR1005G-A
GBPC3504L
STPR2020CT
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2n5830
Abstract: No abstract text available
Text: 2N5830 NPN small signal high voltage general purpose amplifier. 0.15 T. 1 of 2 Home Part Number: 2N5830 Online Store 2N5830 Diodes NPN s m all s ignal high v o lt age general purpo s e am plifier. Transistors
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2N5830
com/2n5830
2N5830
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TRANSISTOR zt751
Abstract: zt751 SOT-223 zt751 PZT751T1-D
Text: ON Semiconductort PZT751T1 PNP Silicon Planar Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for medium power surface
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PZT751T1
inch/1000
PZT751T3
inch/4000
PZT65B
TRANSISTOR zt751
zt751
SOT-223 zt751
PZT751T1-D
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN general purpose transistors PMSTA05; PMSTA06 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Primarily intended for telephony and professional
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OT323
PMSTA55
PMSTA56.
PMSTA05
PMATA06
PMSTA05;
PMSTA06
OT323)
PMSTA06
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 571 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R ^ lk f l, R2=1kfl Ordering Code Pin Configuration XXs UPON INQUIRY 1= B Package II CO O Marking BCR 571 LU II
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OT-23
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Untitled
Abstract: No abstract text available
Text: Panasonic Others DN8650 7-circuit Darlington Driver Array • Overview The DN8650, which is an NPN Darlington type buffer with PNP transistor for input, is a 7-circuit non-inverting type driver array. ■ Features • 7-circuit buffer • • • • Low output breakdown voltage : V ce sus = 3 5 V (min)
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DN8650
DN8650,
16-pin
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFG 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fy = 7.5GHz F = 1.5 dEJ at 900MHz
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900MHz
BFG196
Q62702-F1292
OT-223
900MHz
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DN8650
Abstract: darlington buffer array Seven Transistor Array PNP DN-86
Text: Panasonic Others DN8650 7-circuit Darlington Driver Array • Overview The DN8650, which is an NPN Darlington type buffer with PNP transistor for input, is a 7-circuit non-inverting type driver array. ■ Features • • • • • 7-circuit buffer Low output breakdown voltage : V ce sus = 35V (min)
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DN8650
DN8650,
500mA
16-pin
DIP016-P-0300D)
350mA
bT32fiS2
DN8650
darlington buffer array
Seven Transistor Array PNP
DN-86
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pcf79735S
Abstract: PCF79735 PCF7930XP philips PCF7931XP PCF7931 pcf7973 PCF7930 TRANSISTOR 612 Voltage Regulator Diodes Temperature Sensors
Text: Philips Semiconductors Selection guide Alphanumerical index PAGE AU2901 Quad voltage comparator AU2902 Low power quad voltage comparator 1421 AU2903 Low power dual voltage comparator 1426 AU2904 Low power dual operational amplifier 1431 1416 BUK100-50DL PowerMOS transistor logic level TOPFET
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AU2901
AU2902
AU2903
AU2904
BUK100-50DL
BUK100-50GL
BUK100-50GS
BUK101-50DL
BUK101-50GL
BUK101-50GS
pcf79735S
PCF79735
PCF7930XP
philips PCF7931XP
PCF7931
pcf7973
PCF7930
TRANSISTOR 612
Voltage Regulator Diodes
Temperature Sensors
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TYP 513 309
Abstract: philips fr 310 PXTA14 PMBTA64 Philips Semiconductors Selection Guide BST60 PDTA143 PMBTA14 2PD601A PDTA144
Text: Philips Semiconductors Surface mounted transistors Selection guide GENERAL PURPOSE APPLICATIONS hFE TYPE NUMBER V CEO •c V (mA) fr Plot (mw) min. max. typ (MHz) PAGE NPN BC817 45 500 250 100 600 200 159 BC818 25 500 250 100 600 200 159 BC846 65 100 250
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BC817
BC818
BC846
BC847
BC848
BC868
BCP54
BCP55
BCP56
BCP68
TYP 513 309
philips fr 310
PXTA14
PMBTA64
Philips Semiconductors Selection Guide
BST60
PDTA143
PMBTA14
2PD601A
PDTA144
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PDF
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D86DQ2
Abstract: IRF330
Text: M Û IRF330.331 D86DQ2.Q1 T 5.5 AMPERES 400, 350 VOLTS RDS(ON = 1.0 fi RELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged
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IRF330
D86DQ2
RF331
D86DQi
RF330/D86DQ
250jiA,
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y-parameter
Abstract: MPS-H81 MPSH81
Text: MPS-H81 SILICON PNP SILICON E P IT A X IA L TRANSISTO R . designed fo r use in U H F /V H F oscillator applications. PNP SILICON TRANSISTOR C omplete y-Parameter Curves Low Collector-Em iitter Capacitance — Cce = 0.65 pF (Max) @ V CB = 10 Vdc High C urrent Gain — Bandwidth Product - @ I q = 6.0 mAdc
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MPS-H81
y-parameter
MPS-H81
MPSH81
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Transistor 2SA 2SB 2SC 2SD
Abstract: 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228
Text: Index Bipolar Transistor PNP, High Frequency Use 2SA Type 2SA673 . 81 2SA 673A . 81
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2SA673
2SA778
BB101C
BB301M
BB301C
Transistor 2SA 2SB 2SC 2SD
993 395 pnp npn
transistor 2SA 101
TRANSISTOR 2SC 635
transistor 2Sb 474
transistor 2SC458
transistor 2sc2512
transistor 2sk 168
transistor 2SD 1153
3SK228
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transìstor GENERAL DESCRIPTION PHP4N50E QUICK REFERENCE DATA SYMBOL N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and
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PHP4N50E
T0220AB
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP4N50E QUICK REFERENCE DATA itiW N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and
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PHP4N50E
T0220AB
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PDF
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1B47
Abstract: SD1463
Text: T SGS-THOMSON *7#. mW IUiOT@«i SD1463 TCC0204-125 rz RF & MICROWAVE TRANSISTORS VHF/UHF APPLICATIONS • ■ ■ ■ ■ 400 MHz 28 VOLTS EFFICIENCY 60% COMMON EMITTER GOLD METALLIZATION ■ P o u t = 125 W MIN. WITH 7.0 dB GAIN PIN CONNECTION 2 1 1 2 DESCRIPTION
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SD1463
TCC0204-125)
SD1463
1B47
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50 watts 10mhz 4a
Abstract: API Electronics PG1083 PG1067 PG1068 PG1069 PG1070 PG1071 PG1072 PG1073
Text: 00 43592 A P I ELECTRONICS INC.- 2 0 A -Q1 4 é - I Ampower~Semiconductor Corp.’ '""ici i>F|□□43sc]e oooomh i I 375 Kings Highway IN T E R IM B U L L E T IN Subject to Revision W ithout Notice Hauppauge, N. Y. 11787 ¡PIRGO -A PR IL 15, 1971 POWER TRANSISTOR
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dd43sc
PG1067
PG1084,
PG1068
PG1069
PG1070
PG1071
PG1072
PG1073
50 watts 10mhz 4a
API Electronics
PG1083
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PDF
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