Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2159T6R L, S-BAND SPDT SWITCH DESCRIPTION The μPG2159T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band applications. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from
|
Original
|
PDF
|
PG2159T6R
PG2159T6R
|
PG2159T6R
Abstract: package T6R
Text: GaAs INTEGRATED CIRCUIT PG2159T6R L, S-BAND SPDT SWITCH DESCRIPTION The PG2159T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band applications. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency
|
Original
|
PDF
|
PG2159T6R
PG2159T6R
PG10710EJ01V0DS
package T6R
|
HS350
Abstract: PG2185T6R
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2185T6R SPDT SWITCH FOR 2.5 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DESCRIPTION The μPG2185T6R is a GaAs MMIC SPDT Single Pole Double Throw switch which was designed for 2.5 GHz and 6 GHz dual-band wireless LAN. This device can operate frequency from 2.5 GHz band and 6 GHz band, having the
|
Original
|
PDF
|
PG2185T6R
PG2185T6R
HS350
|
PG2185T6R
Abstract: HS350
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
HS350
Abstract: PG2159T6R
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2159T6R L, S-BAND SPDT SWITCH DESCRIPTION The μPG2159T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band applications. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from
|
Original
|
PDF
|
PG2159T6R
PG2159T6R
HS350
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2185T6R SPDT SWITCH FOR 2 GHz TO 6 GHz <R> DESCRIPTION The μPG2185T6R is a GaAs MMIC SPDT Single Pole Double Throw switch which was designed for 2 GHz to 6 GHz applications, including dual-band wireless LAN. This device can operate frequency from 2 GHz to 6 GHz, having
|
Original
|
PDF
|
PG2185T6R
PG2185T6R
|
PG2159T6R
Abstract: HS350
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2185T6R SPDT SWITCH FOR 2 GHz TO 6 GHz <R> DESCRIPTION The μPG2185T6R is a GaAs MMIC SPDT Single Pole Double Throw switch which was designed for 2 GHz to 6 GHz applications, including dual-band wireless LAN. This device can operate frequency from 2 GHz to 6 GHz, having
|
Original
|
PDF
|
PG2185T6R
PG2185T6R
|
12-PIN
Abstract: HS350
Text: PRELIMINARY DATA SHEET GaAs HBT INTEGRATED CIRCUIT PG2317T5J InGap POWER AMPLIFIER FOR DUAL BAND W-LAN DESCRIPTION The μPG2317T5J is a GaAs HBT MMIC power amplifier for Dual 2.4 GHz and 5.8 GHz band wireless LAN. This device realizes high efficiency, high gain and high output power by using InGaP HBT and shut-down function.
|
Original
|
PDF
|
PG2317T5J
PG2317T5J
12-pin
HS350
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
HS350
Abstract: PG2185T6R
Text: GaAs INTEGRATED CIRCUIT PG2185T6R SPDT SWITCH FOR 2 GHz TO 6 GHz <R> DESCRIPTION The μPG2185T6R is a GaAs MMIC SPDT Single Pole Double Throw switch which was designed for 2 GHz to 6 GHz applications, including dual-band wireless LAN. This device can operate from frequency 2 GHz to 6 GHz, with the
|
Original
|
PDF
|
PG2185T6R
PG2185T6R
HS350
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2159T6R L, S-BAND SPDT SWITCH DESCRIPTION The μPG2159T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band applications. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from
|
Original
|
PDF
|
PG2159T6R
PG2159T6R
|
PG2020
Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Text: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6
|
OCR Scan
|
PDF
|
2N4862
PG1001
PG1002
PG1003
PG1004
PG1005
PG1006
PG1007
PG1008
PG1009
PG2020
PG2011
TO46
PG1083
PG2102
2N4863
PG1050
PG1051
PG1010
PG1053
|
|
|
PG1083
Abstract: PG1070 PG1067 PG1068 PG1069 PG1071 PG1072 PG1073 PG1074 PG1075
Text: 0043 59 2 A P I ELECTRONICS INC . — - Ampower Semiconductor Corp. 375 Kings Highway 11787 : Hauppauge, N. Y. 20 A ‘-e 14 A- loo^s^s oooomt t I-' INTERIM BULLETIN s 3 de Su b je ct to Revision Without Notice -APRIL 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN
|
OCR Scan
|
PDF
|
PG1067
PG1084,
PG1068
PG1069
PG1070
PG1071
PG1072
PG1073
PG1074
PG1083
PG1072
PG1075
|
pg2004
Abstract: PG2011 pg2001 PG2006
Text: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE
|
OCR Scan
|
PDF
|
2N4862
PG1001
PG1002
PG1003
PG1004
PG1005
PG1006
PG1007
PG1008
PG1009
pg2004
PG2011
pg2001
PG2006
|
50 watts 10mhz 4a
Abstract: API Electronics PG1083 PG1067 PG1068 PG1069 PG1070 PG1071 PG1072 PG1073
Text: 00 43592 A P I ELECTRONICS INC.- 2 0 A -Q1 4 é - I Ampower~Semiconductor Corp.’ '""ici i>F|□□43sc]e oooomh i I 375 Kings Highway IN T E R IM B U L L E T IN Subject to Revision W ithout Notice Hauppauge, N. Y. 11787 ¡PIRGO -A PR IL 15, 1971 POWER TRANSISTOR
|
OCR Scan
|
PDF
|
dd43sc
PG1067
PG1084,
PG1068
PG1069
PG1070
PG1071
PG1072
PG1073
50 watts 10mhz 4a
API Electronics
PG1083
|
