10-PIN
Abstract: HS350 VP215 BYPASS Capacitors NEC NEC MARKING TSON
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2027TQ L-BAND 4 W HIGH POWER SPDT SWITCH DESCRIPTION The µPG2027TQ is an L-band SPDT GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.0 GHz, having the low insertion loss and high
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PG2027TQ
PG2027TQ
10-pin
HS350
VP215
BYPASS Capacitors NEC
NEC MARKING TSON
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12-PIN
Abstract: HS350 VP215 NEC RF Switch
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2227T5F L-BAND SP3T SWITCH DESCRIPTION The µPG2227T5F is a L-band SP3T GaAs FET switch witch was developed for CDMA/PCS/GPS triple mode digital cellular telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss
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PG2227T5F
PG2227T5F
12-pin
HS350
VP215
NEC RF Switch
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PDF
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HS350
Abstract: No abstract text available
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PG2053K
PG10503JJ01V0DS
IR260
HS350
L044-435-1588
HS350
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PDF
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12-PIN
Abstract: HS350 VP215
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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10-PIN
Abstract: HS350 VP215
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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20-PIN
Abstract: HS350 PG2053K QFN 80 pin
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2053K GaAs MMIC DBS 4 x 2 IF SWITCH MATRIX FEATURES • HIGH ISOLATION : ISL = 38 dB TYP. @ f = 0.95 to 2.15 GHz, VCONT = +5.0 V/0 V • CONTROL VOLTAGE : VCONT H = +4.5 to +5.5 V (+5.0 V TYP.) : VCONT (L) = −0.5 to +0.5 V (0 V TYP.)
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Original
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PG2053K
20-PIN
PG2053K-E3
G2053
HS350
PG2053K
QFN 80 pin
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PDF
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20-PIN
Abstract: HS350
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PG2020
Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Text: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6
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OCR Scan
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2N4862
PG1001
PG1002
PG1003
PG1004
PG1005
PG1006
PG1007
PG1008
PG1009
PG2020
PG2011
TO46
PG1083
PG2102
2N4863
PG1050
PG1051
PG1010
PG1053
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PDF
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2N4863
Abstract: PG1050 PG1051 PG1052 PG1053 PG1054 PG1055 PG1056 PG1057 PG1066
Text: •M k / 2 ÔA oi:4.4 P I ELE CT RO NICS INC Ho * ¡M T E R IM D E | D 0 M 3 S T 2 0DDD144 S | ». nELEXTRonics r ninc. B U L L E T IN S u b j e c t to R e v i s i o n ' :.T V * POWER TRANSISTOR ENGINEERING BULLETIN^ y e 3 3 p IW i t h o u t N o tic e -, o s "
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OCR Scan
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PG1050
PG1066,
PG1051
PG1052
2N4863
PG1053
PG1054
PG1055
PG1056
PG1057
PG1066
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PDF
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pg2004
Abstract: PG2011 pg2001 PG2006
Text: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE
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OCR Scan
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2N4862
PG1001
PG1002
PG1003
PG1004
PG1005
PG1006
PG1007
PG1008
PG1009
pg2004
PG2011
pg2001
PG2006
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PDF
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2N4863
Abstract: PG1060 PG1050 PG1051 PG1052 PG1053 PG1054 PG1055 PG1056 PG1057
Text: 3* * / 20A- • 01:4.4 : - D P I ELECTRONICS INC 1 _ 20 1 IV I * DE | □DM3S‘i2- 0D0D14M S „ . T E R I M 1 . : POWER TRANSISTOR ENGINEERING BULLETIN PIRGO ? _ -S u b je c t ~7Z3 3 . - . . . B U L L E T I N ^ to R e v i s i o n
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OCR Scan
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000014M
PG1050
PG1066,
PG1051
PG1052
2N4863
PG1053
PG1054
PG1055
PG1060
PG1056
PG1057
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PDF
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DARLINGTON 3A 100V npn
Abstract: complementary npn-pnp power transistors 2N3766 PT7015 complementary npn-pnp PG2051 2N3767 TO66 PLASTIC package 7014 pnp and npn
Text: 0043592 A P I A P I ELECTRONI CS !► ELECTRONICS INC 13 A00 6 7 I NC 13 A iiPRÄ ,U £ ELECTH C S'JQS DIARY DE 3 -0/_. - J □ D Ll 3 5 cia QDODDt,? E f~ - NPN and PNP Complementary Silicon Planar Power Transistors continued 2A B V ceo TO-66 TO-5 TO-46
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OCR Scan
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D435CIB
2N3766
2N3740
PG1050
PG2050
PG1001
PG2001
2N3767
2N3741
PG1051
DARLINGTON 3A 100V npn
complementary npn-pnp power transistors
PT7015
complementary npn-pnp
PG2051
TO66 PLASTIC package
7014
pnp and npn
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PDF
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Untitled
Abstract: No abstract text available
Text: 0043592 A P I E LE CTRONICS INC _. _13A0Q67 3 VI ELECTRONICS INC 13 DE J □□43Scia □OOODb? 2 A P I U W NPN and PNP Complementary Silicon Planar Power Transistors continued . A bPRA ,UE ClECTR C S'JQS OlARY 2A TO-5 TO-66 BV ceo NPN
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OCR Scan
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13A0Q67
2N3766
2N3740
PG1050
PG2050
PG1001
PG2001
2N3767
2N3741
PG1051
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PDF
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