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    109 TRANSISTOR Search Results

    109 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    109 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1862

    Abstract: 2SA1807 A343
    Text: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307


    Original     		PDF 2SA1807 2SA1862 96-102-A331) 96-109-A343) 2SA1862 2SA1807 A343

    2SA1807

    Abstract: A331 2SA1862 96-109-A343
    Text: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors Packages 45


    Original     		PDF 2SA1807 2SA1862 96-102-A331) 96-109-A343) 2SA1807 A331 2SA1862 96-109-A343

    EIA/JESD22-A114-A

    Abstract: EIA-625 all ic datasheet in one pdf file electro discharge machining JESD22-A114-A A112 A115-A WAN-109
    Text: w WAN-109 ESD Damage in Integrated Circuits: Causes and Prevention Applications Note, November 2001, Rev 1.2 CONTENTS BRIEF SUMMARY . 1 INTRODUCTION . 2


    Original     		PDF WAN-109 WAN-107 EIA-625 EIA/JESD22-A114-A EIA/JESD22-A115-A WAN-109 EIA/JESD22-A114-A EIA-625 all ic datasheet in one pdf file electro discharge machining JESD22-A114-A A112 A115-A

    TRANSISTOR D400

    Abstract: D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V
    Text: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320 Transistors 2SA1834 2SC5001 (96-106-B217) (96-193-D217) 292 Transistors 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 (96-603-A314) (96-199-C314)


    Original     		PDF 2SA1807 2SA1862 96-102-A331) 96-109-A343) 2SA1812 2SA1727 2SA1776 96-609-A313) 2SA1834 2SC5001 TRANSISTOR D400 D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V

    MDR6100-16000

    Abstract: No abstract text available
    Text: PHASE LOCKED OSCILLATOR MODEL MDR6100-16000 16 GHz Features ! ! ! ! Low Phase Noise: -109 dBc/Hz @ 100 kHz Low Spurious: -80 dBc Typical External Reference Environmental Screening Available Specifications1 CHARACTERISTIC Frequency (GHz)2 Mechanical Tuning


    Original     		PDF MDR6100-16000 20log MDR6100-16000

    transistor b 1655

    Abstract: 97 transistor transistor 718 shoulder WASHER to220 mica
    Text: M60 Section 6 FREV2 11/23/11 12:17 PM Page 109 TRANSISTOR INSULATORS • Rapid Heat Dissipation • High Dielectric Strength • Low Cost These precision stamped mica insulators provide good thermal conductivity: .009 watts per square inch per degree celsius per inch in thickness.


    Original     		PDF

    80C515

    Abstract: 80515 B158-H6579-X-X-7600 SAB 8155 p 8085 interfacing 8155 ram SAB 80C535-N equivalent Microcontroller Family SAB 8051 Pocket Guide adc interfacing with 8085 program microcontroller diode c0508 SAB 8155
    Text: Microcomputer Components SAB 80515/SAB 80C515 8-Bit Single-Chip Microcontroller Family User's Manual 08.95 SAB 80515 / SAB 80C515 Family Revision History: 8.95 Previous Releases: 12.90/10.92 Page Subjects changes since last revision 30 39 80 105 106 109


    Original     		PDF 80515/SAB 80C515 80C515 80C535 P-LCC-68 P-MQFP-80 80515 B158-H6579-X-X-7600 SAB 8155 p 8085 interfacing 8155 ram SAB 80C535-N equivalent Microcontroller Family SAB 8051 Pocket Guide adc interfacing with 8085 program microcontroller diode c0508 SAB 8155

    24v active clamp forward converter

    Abstract: Theory of Modern Electronic Semiconductor fuses ADM1070 EXB30 EXB30-24D05-3V3 EXB30-24D3V3-2V5 EXB30-48D05-3V3 EXB30-48D3V3-2V5 optocoupler a 2219 K 1358 fet transistor
    Text: EXB30 DUAL Application Note 109 1. Introduction 2 2. Models and Features Features 2 3. General Description Electrical Description Physical Construction 2 3 4. Features and Functions Wide Operating Temperature Range Output Voltage Adjustment Remote On/Off Constant Switching Frequency


    Original     		PDF EXB30 exb30d 24v active clamp forward converter Theory of Modern Electronic Semiconductor fuses ADM1070 EXB30-24D05-3V3 EXB30-24D3V3-2V5 EXB30-48D05-3V3 EXB30-48D3V3-2V5 optocoupler a 2219 K 1358 fet transistor

    2SA1807

    Abstract: A343 2SA1862
    Text: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the


    Original     		PDF 2SA1807 2SA1862 96-102-A331) 96-109-A343) 2SA1807 A343 2SA1862

    GRM442-6X7R104M016A

    Abstract: TL5001A GRM44 IFR7404 SLVP108 TL5001AEVM-108 TL5001AEVM-109 TMS320C6201 TL5001 47 T A 315 GRM42-6X7R103M
    Text: Designing LowĆCost Buck Regulators Using The TL5001A TL5001AEVM - 108/109/110 User’s Guide June 1999 Mixed-Signal Products SLVU014 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue


    Original     		PDF TL5001A TL5001AEVM SLVU014 GRM442-6X7R104M016A TL5001A GRM44 IFR7404 SLVP108 TL5001AEVM-108 TL5001AEVM-109 TMS320C6201 TL5001 47 T A 315 GRM42-6X7R103M

    Linear Troubleshooting Guide

    Abstract: condor HDD15-5-A
    Text: Condor Application Note 5/00 LINEAR TROUBLESHOOTING GUIDE AN-109 WARNING! RISK OF FIRE & SAFETY! Repair must be performed by a Condor authorized personnel No Output: • Visually inspect the supply for open fuses, burnt or discolored parts vented capacitors


    Original     		PDF AN-109 Linear Troubleshooting Guide condor HDD15-5-A

    Untitled

    Abstract: No abstract text available
    Text: VCO-109 Voltage Controlled Oscillator 900-1800 MHz DESCRIPTION The VCO-109 Voltage Controlled Oscillator* combines film circuit technology with a custom, stable high-Q varactor design. A unique, low-noise bipolar transistor and a proprietary output coupling circuit are utilized to provide flat


    OCR Scan     		PDF VCO-109 VCO-109

    bc 303 transistor

    Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
    Text: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in


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    TRANSISTOR BC 137

    Abstract: BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107
    Text: 2SC D • û23SbG5 OOGMOÛT T ■ S IE G ^ T -*?-// NPN Silicon Transistors SIEMENS A KTIEN G ESELLSCH A F IC 107 J C 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case


    OCR Scan     		PDF 23SbG5 Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 Q60203-X108-A Q60203-X108-B Q60203-X108-C 60203-X109 Q60203-X109-B TRANSISTOR BC 137 BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107

    Untitled

    Abstract: No abstract text available
    Text: VARI-L CO INC S^E D • 1437b54 GQ01G54 0 ■ VRL VC O -109 Voltage Controlled Oscillator 900-1800 M Hz DESCRIPTION The VCO 109 Voltage Controlled Oscillator* combines film circuit technology with a custom, stable high-Q varactor design. A unique, low-noise


    OCR Scan     		PDF 1437b54 GQ01G54 6061-T6. UNC-38 QQ-N-290,

    2N3820

    Abstract: No abstract text available
    Text: riOTOROLA SC -CDIODES/OPT0 } Type Number Page Number Page Number D-S D-S S-G Power 2N3743 3-105 3-107 3-107 3-100 3-109 3-109 3-111 3-111 2N3439 2N3440 2N3444S 2N3467 2N3468 2N34B5A 2N3486A 2-6 2-7 2-7 THYRISTORS 2-7 3-105 2N4199 through 2N4206 2-5 3-120 TRANSISTORS


    OCR Scan     		PDF 2N3743 2N3439 2N3440 2N3444S 2N3467 2N3468 2N34B5A 2N3486A 2N3715 2N3716 2N3820

    2N9303

    Abstract: cbc 546 CBC 546 c 250.250 BC108A 10745 2N2483 107bbc
    Text: NPN Silicon Transistors NPN Silicon Planar Transistors for low-level audio applications Common maximum ratings Type b v CFO V BVCSO V b v ebo PN PN PN PN PN PN PN PN PN PN - BC 107 BC 107 A BC 107 B BC 108 BC 108 A BC 108 B BC 108 C BC 1092 BC 109 B2 BC 109 C2


    OCR Scan     		PDF 300mW 200mW V/10uA) 10mA/0 2N9303 2N24832 2N24843 cbc 546 CBC 546 c 250.250 BC108A 10745 2N2483 107bbc

    transistor KSA

    Abstract: AF109R
    Text: ESC D • flEBShOS 0ÛÛ4G53 0 « S I E G A F 109 R PNP Germanium RF Transistor SIEMENS AKT IE Nû ES EL LSC H AF 04053 D - T - 3 /'0 ~ 7 for A G C input stages up to 260 MHz AF 109 R is a germanium PNP RF mesa transistor in TO 72 case 18 A 4 DIN 41876 .


    OCR Scan     		PDF Q60106-X109-R1 Q004QS? AF109R transistor KSA AF109R

    cross reference zener diodes

    Abstract: power transistors cross reference GERMANIUM SMALL SIGNAL TRANSISTORS
    Text: Table off Contents Page Index / Cross Reference 2 Surface Mounted Devices 47 Small Signal Transistors 65 Power Transistors 93 Junction FETs 109 Silicon Diodes 113 Germanium Diodes 117 Zener Diodes 119 Current Limiting Diodes 135 Rectifiers 157 Bridge Rectifiers


    OCR Scan     		PDF

    PH BC107

    Abstract: PH BC109 bc107 curves 7z08s BC109C D73 -Y BC108C BC107 BG10Z BC108B
    Text: BGIQZJd 109 T PHILIPS INTERNATIONAL SbE D • - 2 ^ 711002b G O m ^ M Ô A.F. SILICON PLANAR EPITAXIAL TRANSISTORS / MIS ■ PHIN ^ N-P-N transistors in TO-18 metal envelopes with the collector connected to the case.


    OCR Scan     		PDF BG10ZÃ 711002b BC107 BC108 BC109 BC109 Collector-e07 PH BC107 PH BC109 bc107 curves 7z08s BC109C D73 -Y BC108C BG10Z BC108B

    cross reference zener diodes

    Abstract: germanium diodes
    Text: Table of Contents Page Index / Cross Reference 2 Surface Mounted Devices 47 Small Signal Transistors 65 Power Transistors 93 Junction FETs 109 Silicon Diodes 113 Germanium Diodes 117 Zener Diodes 119 Current Limiting Diodes 135 Rectifiers 157 Bridge Rectifiers


    OCR Scan     		PDF

    cross reference zener diodes

    Abstract: No abstract text available
    Text: Table off Contents N Index / Cross Reference Page 2 Surface Mounted Devices 47 Small Signal Transistors 65 Power Transistors 93 Junction FETs 109 Silicon Diodes 113 Germanium Diodes 117 Zener Diodes 119 Transient Voltage Suppressors TVS 130 Current Limiting Diodes


    OCR Scan     		PDF

    BC108A

    Abstract: bc109
    Text: BC107 to 109 _ A .F. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose NPN transistors in TO-18 metal packages w ith the collector connected to the case. PNP com plem ents are BC177, BC178 and BC179. QUICK REFERENCE D ATA Collector-emitter voltage VgE = 0


    OCR Scan     		PDF BC107 BC177, BC178 BC179. BC107A BC107B BC108C BC108A BC108B bc109

    Untitled

    Abstract: No abstract text available
    Text: GENERAL SlIHu INFORMATION GENERAL GENERAL INFORMATION CONTENTS RAGE 3 RAGE 7 PAGE 34 RAGE 55 RAGE 71 RAGE 85 RAGE 106 RAGE 109 PAGE 121 VARISTORS PAGE 130 MISCELLANEOUS PAGE 131 INTEGRATED SILICON C I RCUITS DIODES SRCs SILICON TRANSISTORS CAR AC I TORS ;


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