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    10H60 Search Results

    10H60 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    DO5010H-602 Coilcraft Inc Power inductor, high current, 20% tol, SMT, RoHS Visit Coilcraft Inc
    DO5010H-602MLD Coilcraft Inc General Purpose Inductor, 6uH, 20%, 1 Element, Ferrite-Core, SMD, 7360, ROHS COMPLIANT Visit Coilcraft Inc
    DO5010H-602ML Coilcraft Inc Power inductor, high current, 20% tol, SMT, RoHS Visit Coilcraft Inc
    DO5010H-602MLB Coilcraft Inc General Purpose Inductor, 6uH, 20%, 1 Element, Ferrite-Core, SMD, 7360, ROHS COMPLIANT Visit Coilcraft Inc
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    10H60 Price and Stock

    Taiwan Semiconductor TSP10H60S-S1G

    DIODE SCHOTTKY 60V 10A TO277A
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    DigiKey TSP10H60S-S1G Digi-Reel 14,279 1
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    TSP10H60S-S1G Cut Tape 14,279 1
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    TSP10H60S-S1G Reel 12,000 1,500
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    STMicroelectronics STGB10H60DF

    IGBT 600V 20A 115W D2PAK
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    DigiKey STGB10H60DF Cut Tape 4,512 1
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    STGB10H60DF Digi-Reel 4,512 1
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    STGB10H60DF Reel 2,000 1,000
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    Mouser Electronics STGB10H60DF 960
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    STMicroelectronics STGB10H60DF 960 1
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    TME STGB10H60DF 1
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    Avnet Silica STGB10H60DF 16 Weeks 1,000
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    EBV Elektronik STGB10H60DF 16 Weeks 1,000
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    Hirose Electric Co Ltd DF17(1.0H)-60DP-0.5V(57)

    CONN HDR 60POS SMD GOLD
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    DigiKey DF17(1.0H)-60DP-0.5V(57) Digi-Reel 2,428 1
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    Mouser Electronics DF17(1.0H)-60DP-0.5V(57) 2,823
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    TME DF17(1.0H)-60DP-0.5V(57) 1,000
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    Avnet Abacus DF17(1.0H)-60DP-0.5V(57) 1,000 14 Weeks 1,000
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    Sager DF17(1.0H)-60DP-0.5V(57) 1,000
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    STMicroelectronics STGP10H60DF

    IGBT TRENCH FS 600V 20A TO220
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    DigiKey STGP10H60DF Tube 1,804 1
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    Mouser Electronics STGP10H60DF 750
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    Newark STGP10H60DF Bulk 801 1
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    STMicroelectronics STGP10H60DF 750 1
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    TME STGP10H60DF 1
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    Avnet Silica STGP10H60DF 100 16 Weeks 50
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    EBV Elektronik STGP10H60DF 10,350 16 Weeks 50
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    STMicroelectronics STGF10H60DF

    IGBT TRENCH FS 600V 20A TO220FP
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    DigiKey STGF10H60DF Tube 1,018 1
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    Mouser Electronics STGF10H60DF 1,177
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    STMicroelectronics STGF10H60DF 1,177 1
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    TME STGF10H60DF 1
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    Avnet Silica STGF10H60DF 150 16 Weeks 50
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    Chip1Stop STGF10H60DF Tube 8,000
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    EBV Elektronik STGF10H60DF 11,400 16 Weeks 50
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    Find more 10H60 price and stock on Findchips.com

    10H60 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    10H609/BEAJC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    10H609/BFAJC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    10H609M/B2AJC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    10H60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IGCT thyristor ABB

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 Doc. No. 5SYA 1226-03 Aug. 2000 • Direct fiber optic control • Fast response ∆tdon < 3 µs, tdoff < 6 µs


    Original     		PDF 10H6004 CH-5600 IGCT thyristor ABB

    Untitled

    Abstract: No abstract text available
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AC ITO-220AC • Guardring for overvoltage protection 2 2 1 1 MBR10Hxx


    Original     		PDF 10H35 10H60 O-220AC ITO-220AC MBR10Hxx MBRF10Hxx O-263AB J-STD-020, O-263AB 22-B106

    MBR10H35

    Abstract: No abstract text available
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


    Original     		PDF 10H35 10H60 O-220AC ITO-220AC MBR10Hxx MBRF10Hxx J-STD-020C, O-263AB ITO-220AC MBR10H35

    10H60

    Abstract: 10H35 MBR10H35
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for improved high temperature performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


    Original     		PDF 10H35 10H60 O-220AC ITO-220AC MBR10Hxx MBRF10Hxx J-STD-020C, O-263AB O-220AC ITO-220AC 10H60 MBR10H35

    Untitled

    Abstract: No abstract text available
    Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-03 Jan. 10 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters


    Original     		PDF 10H6004 5SYA1109-03 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AC ITO-220AC • Guardring for overvoltage protection 2 2 1 1 MBR10Hxx


    Original     		PDF 10H35 10H60 O-220AC ITO-220AC J-STD-020, O-263AB 22-B106 O-220AC ITO-220AC AEC-Q101

    MBR10H35

    Abstract: 10H60 JESD22-B102 J-STD-002
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


    Original     		PDF 10H35 10H60 O-220AC ITO-220AC MBR10Hxx MBRF10Hxx J-STD-020, O-263AB O-220AC ITO-220AC MBR10H35 10H60 JESD22-B102 J-STD-002

    10h60

    Abstract: MBR10H35
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


    Original     		PDF 10H35 10H60 O-220AC ITO-220AC J-STD-020, O-263AB ITO-220AC 2002/95/EC 2002/96/EC 10h60 MBR10H35

    MBR10H35

    Abstract: No abstract text available
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for improved high temperature performance TO-220AC FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop


    Original     		PDF 10H35 10H60 O-220AC ITO-220AC MBR10Hxx MBRF10Hxx O-263AB J-STD-020C 2002/95/EC MBR10H35

    IGCT abb

    Abstract: ka 70 05
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Sep. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


    Original     		PDF 10H6004 5SYA1226-03 10H6004 CH-5600 IGCT abb ka 70 05

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 5500 ITGQM = 900 ITSM = 8 VT0 = 1.5 rT = 1.64 VDClink = 3300 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 PRELIMINARY Doc. No. 5SYA 1226-02 Feb. 99 • • • • • • • • Features Direct fiber optic control


    Original     		PDF 10H6004 CH-5600

    IGCT thyristor ABB

    Abstract: HFBR-2528 A115 B115 HFBR-1528 MTA-156 VT115 IGCT thyristor current max igct abb SF 7510
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 5500 900 7.5x103 1.65 2 3300 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6010 PRELIMINARY Doc. No. 5SYA1226-05 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and


    Original     		PDF 10H6010 5SYA1226-05 CH-5600 IGCT thyristor ABB HFBR-2528 A115 B115 HFBR-1528 MTA-156 VT115 IGCT thyristor current max igct abb SF 7510

    ABB Semiconductors

    Abstract: RCD snubber
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 6000 1100 18 1.5 0.6 3800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in high-voltage GTO converters


    Original     		PDF 10H6004 5SYA1109-02 CH-5600 ABB Semiconductors RCD snubber

    10h60

    Abstract: MBR10H35 JESD22-B102D J-STD-002B
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for improved high temperature performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


    Original     		PDF 10H35 10H60 O-220AC ITO-220AC MBR10Hxx MBRF10Hxx J-STD-020C, O-263AB O-263AB 10h60 MBR10H35 JESD22-B102D J-STD-002B

    RCD snubber

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 6000 1100 18 1.5 0.6 3800 V A kA V Fast Recovery Diode 5SDF 10H6004 mΩ V Doc. No. 5SYA 1109-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in high-voltage GTO converters


    Original     		PDF 10H6004 CH-5600 RCD snubber

    abb gto characteristic

    Abstract: No abstract text available
    Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters


    Original     		PDF 10H6004 5SYA1109-02 CH-5600 abb gto characteristic

    10h60

    Abstract: MBR10H35
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


    Original     		PDF 10H35 10H60 O-220AC ITO-220AC J-STD-020, O-263AB ITO-220AC 2002/95/EC 2002/96/EC 10h60 MBR10H35

    MBR10H35

    Abstract: No abstract text available
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


    Original     		PDF 10H35 10H60 O-220AC ITO-220AC J-STD-020, O-263AB ITO-220AC 2002/95/EC 2002/96/EC MBR10H35

    IGCT thyristor ABB

    Abstract: igct abb IGCT gct thyristor WAGO IGCT thyristor HFBR-2528 IGCT thyristor current max high power igct abb
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


    Original     		PDF 10H6004 5SYA1226-03 co1226-03 CH-5600 IGCT thyristor ABB igct abb IGCT gct thyristor WAGO IGCT thyristor HFBR-2528 IGCT thyristor current max high power igct abb

    Untitled

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Nov. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


    Original     		PDF 10H6004 5SYA1226-03 10H6004 CH-5600

    H600

    Abstract: MC100H600 MC100H600FN MC10H600 MC10H600FN
    Text: 10H600, MC100H600 9-Bit TTL to ECL Translator The MC10H/100H600 is a 9–bit, dual supply TTL to ECL translator. Devices in the Motorola 9–bit translator series utilize the 28–lead PLCC for optimal power pinning, signal flow–through and electrical performance.


    Original     		PDF MC10H600, MC100H600 MC10H/100H600 10HxEUROPE: r14525 MC10H600/D H600 MC100H600 MC100H600FN MC10H600 MC10H600FN

    Q425

    Abstract: MC100H601 MC100H601FN MC10H601 MC10H601FN
    Text: 10H601, MC100H601 9-Bit ECL to TTL Translator The MC10H/100H601 is a 9–bit, dual supply ECL to TTL translator. Devices in the Motorola 9–bit translator series utilize the 28–lead PLCC for optimal power pinning, signal flow–through and electrical performance.


    Original     		PDF MC10H601, MC100H601 MC10H/100H601 r14525 MC10H601/D Q425 MC100H601 MC100H601FN MC10H601 MC10H601FN

    Untitled

    Abstract: No abstract text available
    Text: M M O TO R O LA Military 10H609 Dual 4-5-Input OR/NOR Gate ELECTRICALLY TESTED PER: 5962-8756901 MP0 The 10H609 is a Dual 4-5-input OR/NOR gate. • Propagation Delay Average, 0.75 ns Typical // / / / / / • 180 mW Max/Pkg (No Load) • Improved Noise Margin 150 mV (Over Operating Voltage and Temperature


    OCR Scan     		PDF 10H609 10H609 10K-Compatible 10H609/BXAJC

    Untitled

    Abstract: No abstract text available
    Text: ^ M O T O R O L A Military 10H609 Dual 4-5-Input OR/NOR Gate ELECTRICALLY TESTED PER: 5962-8756901 The 10H609 is a Dual 4-5-input OR/NOR gate. • Propagation Delay Average, 0.75 ns Typical • 180 mW Max/Pkg (No Load) • Improved Noise Margin 150 mV (Over Operating Voltage and Temperature


    OCR Scan     		PDF 10H609 10K-Compatible 10H609 10H609/BXAJC