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    10H60 Search Results

    10H60 Result Highlights (4)

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    DO5010H-602 Coilcraft Inc Power inductor, high current, 20% tol, SMT, RoHS Visit Coilcraft Inc
    DO5010H-602MLD Coilcraft Inc General Purpose Inductor, 6uH, 20%, 1 Element, Ferrite-Core, SMD, 7360, ROHS COMPLIANT Visit Coilcraft Inc
    DO5010H-602ML Coilcraft Inc Power inductor, high current, 20% tol, SMT, RoHS Visit Coilcraft Inc
    DO5010H-602MLB Coilcraft Inc General Purpose Inductor, 6uH, 20%, 1 Element, Ferrite-Core, SMD, 7360, ROHS COMPLIANT Visit Coilcraft Inc
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    10H60 Price and Stock

    Taiwan Semiconductor TSP10H60S-S1G

    DIODE SCHOTTKY 60V 10A TO277A
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    DigiKey TSP10H60S-S1G Cut Tape 14,279 1
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    STMicroelectronics STGB10H60DF

    IGBT 600V 20A 115W D2PAK
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    STGB10H60DF Digi-Reel 4,512 1
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    STGB10H60DF Reel 2,000 1,000
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    Mouser Electronics STGB10H60DF 960
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    STMicroelectronics STGB10H60DF 960 1
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    TME STGB10H60DF 1
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    Avnet Silica STGB10H60DF 16 Weeks 1,000
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    EBV Elektronik STGB10H60DF 16 Weeks 1,000
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    Hirose Electric Co Ltd DF17(1.0H)-60DP-0.5V(57)

    CONN HDR 60POS SMD GOLD
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    DF17(1.0H)-60DP-0.5V(57) Digi-Reel 2,308 1
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    DF17(1.0H)-60DP-0.5V(57) Reel 1,000 1,000
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    Mouser Electronics DF17(1.0H)-60DP-0.5V(57) 2,823
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    TME DF17(1.0H)-60DP-0.5V(57) 1,000
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    Avnet Abacus DF17(1.0H)-60DP-0.5V(57) 3,000 14 Weeks 1,000
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    Sager DF17(1.0H)-60DP-0.5V(57) 1,000
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    STMicroelectronics STGP10H60DF

    IGBT TRENCH FS 600V 20A TO220
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    STMicroelectronics STGP10H60DF 747 1
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    TME STGP10H60DF 1
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    Avnet Silica STGP10H60DF 100 16 Weeks 50
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    EBV Elektronik STGP10H60DF 8,350 16 Weeks 50
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    STMicroelectronics STGF10H60DF

    IGBT TRENCH FS 600V 20A TO220FP
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    DigiKey STGF10H60DF Tube 1,015 1
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    Mouser Electronics STGF10H60DF 1,165
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    STMicroelectronics STGF10H60DF 1,165 1
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    TME STGF10H60DF 1
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    Avnet Silica STGF10H60DF 150 16 Weeks 50
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    10H60 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    10H609/BEAJC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    10H609/BFAJC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    10H609M/B2AJC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    10H60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IGCT thyristor ABB

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 Doc. No. 5SYA 1226-03 Aug. 2000 • Direct fiber optic control • Fast response ∆tdon < 3 µs, tdoff < 6 µs


    Original
    10H6004 CH-5600 IGCT thyristor ABB PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AC ITO-220AC • Guardring for overvoltage protection 2 2 1 1 MBR10Hxx


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    10H35 10H60 O-220AC ITO-220AC MBR10Hxx MBRF10Hxx O-263AB J-STD-020, O-263AB 22-B106 PDF

    MBR10H35

    Abstract: No abstract text available
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


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    10H35 10H60 O-220AC ITO-220AC MBR10Hxx MBRF10Hxx J-STD-020C, O-263AB ITO-220AC MBR10H35 PDF

    10H60

    Abstract: 10H35 MBR10H35
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for improved high temperature performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


    Original
    10H35 10H60 O-220AC ITO-220AC MBR10Hxx MBRF10Hxx J-STD-020C, O-263AB O-220AC ITO-220AC 10H60 MBR10H35 PDF

    Untitled

    Abstract: No abstract text available
    Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-03 Jan. 10 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters


    Original
    10H6004 5SYA1109-03 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AC ITO-220AC • Guardring for overvoltage protection 2 2 1 1 MBR10Hxx


    Original
    10H35 10H60 O-220AC ITO-220AC J-STD-020, O-263AB 22-B106 O-220AC ITO-220AC AEC-Q101 PDF

    MBR10H35

    Abstract: 10H60 JESD22-B102 J-STD-002
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


    Original
    10H35 10H60 O-220AC ITO-220AC MBR10Hxx MBRF10Hxx J-STD-020, O-263AB O-220AC ITO-220AC MBR10H35 10H60 JESD22-B102 J-STD-002 PDF

    10h60

    Abstract: MBR10H35
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


    Original
    10H35 10H60 O-220AC ITO-220AC J-STD-020, O-263AB ITO-220AC 2002/95/EC 2002/96/EC 10h60 MBR10H35 PDF

    MBR10H35

    Abstract: No abstract text available
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for improved high temperature performance TO-220AC FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop


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    10H35 10H60 O-220AC ITO-220AC MBR10Hxx MBRF10Hxx O-263AB J-STD-020C 2002/95/EC MBR10H35 PDF

    IGCT abb

    Abstract: ka 70 05
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Sep. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


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    10H6004 5SYA1226-03 10H6004 CH-5600 IGCT abb ka 70 05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 5500 ITGQM = 900 ITSM = 8 VT0 = 1.5 rT = 1.64 VDClink = 3300 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 PRELIMINARY Doc. No. 5SYA 1226-02 Feb. 99 • • • • • • • • Features Direct fiber optic control


    Original
    10H6004 CH-5600 PDF

    IGCT thyristor ABB

    Abstract: HFBR-2528 A115 B115 HFBR-1528 MTA-156 VT115 IGCT thyristor current max igct abb SF 7510
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 5500 900 7.5x103 1.65 2 3300 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6010 PRELIMINARY Doc. No. 5SYA1226-05 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and


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    10H6010 5SYA1226-05 CH-5600 IGCT thyristor ABB HFBR-2528 A115 B115 HFBR-1528 MTA-156 VT115 IGCT thyristor current max igct abb SF 7510 PDF

    ABB Semiconductors

    Abstract: RCD snubber
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 6000 1100 18 1.5 0.6 3800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in high-voltage GTO converters


    Original
    10H6004 5SYA1109-02 CH-5600 ABB Semiconductors RCD snubber PDF

    10h60

    Abstract: MBR10H35 JESD22-B102D J-STD-002B
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for improved high temperature performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


    Original
    10H35 10H60 O-220AC ITO-220AC MBR10Hxx MBRF10Hxx J-STD-020C, O-263AB O-263AB 10h60 MBR10H35 JESD22-B102D J-STD-002B PDF

    RCD snubber

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 6000 1100 18 1.5 0.6 3800 V A kA V Fast Recovery Diode 5SDF 10H6004 mΩ V Doc. No. 5SYA 1109-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in high-voltage GTO converters


    Original
    10H6004 CH-5600 RCD snubber PDF

    abb gto characteristic

    Abstract: No abstract text available
    Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters


    Original
    10H6004 5SYA1109-02 CH-5600 abb gto characteristic PDF

    10h60

    Abstract: MBR10H35
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


    Original
    10H35 10H60 O-220AC ITO-220AC J-STD-020, O-263AB ITO-220AC 2002/95/EC 2002/96/EC 10h60 MBR10H35 PDF

    MBR10H35

    Abstract: No abstract text available
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


    Original
    10H35 10H60 O-220AC ITO-220AC J-STD-020, O-263AB ITO-220AC 2002/95/EC 2002/96/EC MBR10H35 PDF

    IGCT thyristor ABB

    Abstract: igct abb IGCT gct thyristor WAGO IGCT thyristor HFBR-2528 IGCT thyristor current max high power igct abb
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


    Original
    10H6004 5SYA1226-03 co1226-03 CH-5600 IGCT thyristor ABB igct abb IGCT gct thyristor WAGO IGCT thyristor HFBR-2528 IGCT thyristor current max high power igct abb PDF

    Untitled

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Nov. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


    Original
    10H6004 5SYA1226-03 10H6004 CH-5600 PDF

    H600

    Abstract: MC100H600 MC100H600FN MC10H600 MC10H600FN
    Text: 10H600, MC100H600 9-Bit TTL to ECL Translator The MC10H/100H600 is a 9–bit, dual supply TTL to ECL translator. Devices in the Motorola 9–bit translator series utilize the 28–lead PLCC for optimal power pinning, signal flow–through and electrical performance.


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    MC10H600, MC100H600 MC10H/100H600 10HxEUROPE: r14525 MC10H600/D H600 MC100H600 MC100H600FN MC10H600 MC10H600FN PDF

    Q425

    Abstract: MC100H601 MC100H601FN MC10H601 MC10H601FN
    Text: 10H601, MC100H601 9-Bit ECL to TTL Translator The MC10H/100H601 is a 9–bit, dual supply ECL to TTL translator. Devices in the Motorola 9–bit translator series utilize the 28–lead PLCC for optimal power pinning, signal flow–through and electrical performance.


    Original
    MC10H601, MC100H601 MC10H/100H601 r14525 MC10H601/D Q425 MC100H601 MC100H601FN MC10H601 MC10H601FN PDF

    Untitled

    Abstract: No abstract text available
    Text: M M O TO R O LA Military 10H609 Dual 4-5-Input OR/NOR Gate ELECTRICALLY TESTED PER: 5962-8756901 MP0 The 10H609 is a Dual 4-5-input OR/NOR gate. • Propagation Delay Average, 0.75 ns Typical // / / / / / • 180 mW Max/Pkg (No Load) • Improved Noise Margin 150 mV (Over Operating Voltage and Temperature


    OCR Scan
    10H609 10H609 10K-Compatible 10H609/BXAJC PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ M O T O R O L A Military 10H609 Dual 4-5-Input OR/NOR Gate ELECTRICALLY TESTED PER: 5962-8756901 The 10H609 is a Dual 4-5-input OR/NOR gate. • Propagation Delay Average, 0.75 ns Typical • 180 mW Max/Pkg (No Load) • Improved Noise Margin 150 mV (Over Operating Voltage and Temperature


    OCR Scan
    10H609 10K-Compatible 10H609 10H609/BXAJC PDF