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    STMicroelectronics STPS10H60SFY

    DIODE SCHOTTKY 60V 10A TO277A
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    DigiKey STPS10H60SFY Digi-Reel 20,863 1
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    Taiwan Semiconductor TSP10H60S-S1G

    DIODE SCHOTTKY 60V 10A TO277A
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    DigiKey TSP10H60S-S1G Digi-Reel 14,224 1
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    TSP10H60S-S1G Reel 12,000 1,500
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    STMicroelectronics STGB10H60DF

    IGBT TRENCH FS 600V 20A TO-263
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    DigiKey STGB10H60DF Cut Tape 4,507 1
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    Avnet Americas STGB10H60DF Reel 15 Weeks 1,000
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    Mouser Electronics STGB10H60DF 955
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    STMicroelectronics STGB10H60DF 955 1
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    TME STGB10H60DF 1
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    Avnet Silica STGB10H60DF 16 Weeks 1,000
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    STMicroelectronics STPS10H60SF

    DIODE SCHOTTKY 60V 10A TO277A
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    DigiKey STPS10H60SF Digi-Reel 3,935 1
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    STPS10H60SF Cut Tape 3,935 1
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    Mouser Electronics STPS10H60SF 7,646
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    STMicroelectronics STPS10H60SF 7,646 1
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    Avnet Silica STPS10H60SF 6,000 16 Weeks 6,000
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    EBV Elektronik STPS10H60SF 16 Weeks 6,000
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    Vyrian STPS10H60SF 6,124
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    Schaffner FN2410H-60-34

    LINE FILTER 520V/300VAC 60A CHAS
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    DigiKey FN2410H-60-34 Tray 9 1
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    Mouser Electronics FN2410H-60-34
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    TME FN2410H-60-34 5
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    Master Electronics FN2410H-60-34
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    Find more 10H60 price and stock on Findchips.com

    10H60 Datasheets (3)

    Part
    ECAD Model
    Manufacturer
    Description
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    Datasheet Type
    PDF
    10H609/BEAJC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    10H609/BFAJC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    10H609M/B2AJC Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    10H60 Datasheets Context Search

    Catalog Datasheet
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    PDF

    IGCT thyristor ABB

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 Doc. No. 5SYA 1226-03 Aug. 2000 • Direct fiber optic control • Fast response ∆tdon < 3 µs, tdoff < 6 µs


    Original     		10H6004 CH-5600 IGCT thyristor ABB PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AC ITO-220AC • Guardring for overvoltage protection 2 2 1 1 MBR10Hxx


    Original     		10H35 10H60 O-220AC ITO-220AC MBR10Hxx MBRF10Hxx O-263AB J-STD-020, O-263AB 22-B106 PDF

    MBR10H35

    Abstract: No abstract text available
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


    Original     		10H35 10H60 O-220AC ITO-220AC MBR10Hxx MBRF10Hxx J-STD-020C, O-263AB ITO-220AC MBR10H35 PDF

    10H60

    Abstract: 10H35 MBR10H35
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for improved high temperature performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


    Original     		10H35 10H60 O-220AC ITO-220AC MBR10Hxx MBRF10Hxx J-STD-020C, O-263AB O-220AC ITO-220AC 10H60 MBR10H35 PDF

    Untitled

    Abstract: No abstract text available
    Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-03 Jan. 10 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters


    Original     		10H6004 5SYA1109-03 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AC ITO-220AC • Guardring for overvoltage protection 2 2 1 1 MBR10Hxx


    Original     		10H35 10H60 O-220AC ITO-220AC J-STD-020, O-263AB 22-B106 O-220AC ITO-220AC AEC-Q101 PDF

    MBR10H35

    Abstract: 10H60 JESD22-B102 J-STD-002
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


    Original     		10H35 10H60 O-220AC ITO-220AC MBR10Hxx MBRF10Hxx J-STD-020, O-263AB O-220AC ITO-220AC MBR10H35 10H60 JESD22-B102 J-STD-002 PDF

    10h60

    Abstract: MBR10H35
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


    Original     		10H35 10H60 O-220AC ITO-220AC J-STD-020, O-263AB ITO-220AC 2002/95/EC 2002/96/EC 10h60 MBR10H35 PDF

    Untitled

    Abstract: No abstract text available
    Text: M M O TO R O LA Military 10H609 Dual 4-5-Input OR/NOR Gate ELECTRICALLY TESTED PER: 5962-8756901 MP0 The 10H609 is a Dual 4-5-input OR/NOR gate. • Propagation Delay Average, 0.75 ns Typical // / / / / / • 180 mW Max/Pkg (No Load) • Improved Noise Margin 150 mV (Over Operating Voltage and Temperature


    OCR Scan     		10H609 10H609 10K-Compatible 10H609/BXAJC PDF

    MBR10H35

    Abstract: No abstract text available
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for improved high temperature performance TO-220AC FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop


    Original     		10H35 10H60 O-220AC ITO-220AC MBR10Hxx MBRF10Hxx O-263AB J-STD-020C 2002/95/EC MBR10H35 PDF

    IGCT abb

    Abstract: ka 70 05
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Sep. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


    Original     		10H6004 5SYA1226-03 10H6004 CH-5600 IGCT abb ka 70 05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 5500 ITGQM = 900 ITSM = 8 VT0 = 1.5 rT = 1.64 VDClink = 3300 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 PRELIMINARY Doc. No. 5SYA 1226-02 Feb. 99 • • • • • • • • Features Direct fiber optic control


    Original     		10H6004 CH-5600 PDF

    IGCT thyristor ABB

    Abstract: HFBR-2528 A115 B115 HFBR-1528 MTA-156 VT115 IGCT thyristor current max igct abb SF 7510
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 5500 900 7.5x103 1.65 2 3300 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6010 PRELIMINARY Doc. No. 5SYA1226-05 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and


    Original     		10H6010 5SYA1226-05 CH-5600 IGCT thyristor ABB HFBR-2528 A115 B115 HFBR-1528 MTA-156 VT115 IGCT thyristor current max igct abb SF 7510 PDF

    ABB Semiconductors

    Abstract: RCD snubber
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 6000 1100 18 1.5 0.6 3800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in high-voltage GTO converters


    Original     		10H6004 5SYA1109-02 CH-5600 ABB Semiconductors RCD snubber PDF

    Abb diode 6000 A

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 6000 IFAVM = 1100 IFRMS = 1700 IFSM = 18 VF0 = 1.50 rF = 0.6 VDClink = 3800 V A A kA V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA 1109-02 Feb. 99 •Patented free-floating silicon technology •Low on-state and switching losses


    Original     		10H6004 CH-5600 Abb diode 6000 A PDF

    RCD snubber

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 6000 1100 18 1.5 0.6 3800 V A kA V Fast Recovery Diode 5SDF 10H6004 mΩ V Doc. No. 5SYA 1109-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in high-voltage GTO converters


    Original     		10H6004 CH-5600 RCD snubber PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ M O T O R O L A Military 10H609 Dual 4-5-Input OR/NOR Gate ELECTRICALLY TESTED PER: 5962-8756901 The 10H609 is a Dual 4-5-input OR/NOR gate. • Propagation Delay Average, 0.75 ns Typical • 180 mW Max/Pkg (No Load) • Improved Noise Margin 150 mV (Over Operating Voltage and Temperature


    OCR Scan     		10H609 10K-Compatible 10H609 10H609/BXAJC PDF

    abb gto characteristic

    Abstract: No abstract text available
    Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters


    Original     		10H6004 5SYA1109-02 CH-5600 abb gto characteristic PDF

    10h60

    Abstract: MBR10H35
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


    Original     		10H35 10H60 O-220AC ITO-220AC J-STD-020, O-263AB ITO-220AC 2002/95/EC 2002/96/EC 10h60 MBR10H35 PDF

    MBR10H35

    Abstract: No abstract text available
    Text: MBR F,B 10H35 thru MBR(F,B)10H60 Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


    Original     		10H35 10H60 O-220AC ITO-220AC J-STD-020, O-263AB ITO-220AC 2002/95/EC 2002/96/EC MBR10H35 PDF

    IGCT thyristor ABB

    Abstract: igct abb IGCT gct thyristor WAGO IGCT thyristor HFBR-2528 IGCT thyristor current max high power igct abb
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


    Original     		10H6004 5SYA1226-03 co1226-03 CH-5600 IGCT thyristor ABB igct abb IGCT gct thyristor WAGO IGCT thyristor HFBR-2528 IGCT thyristor current max high power igct abb PDF

    Untitled

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Nov. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


    Original     		10H6004 5SYA1226-03 10H6004 CH-5600 PDF

    H600

    Abstract: MC100H600 MC100H600FN MC10H600 MC10H600FN
    Text: 10H600, MC100H600 9-Bit TTL to ECL Translator The MC10H/100H600 is a 9–bit, dual supply TTL to ECL translator. Devices in the Motorola 9–bit translator series utilize the 28–lead PLCC for optimal power pinning, signal flow–through and electrical performance.


    Original     		MC10H600, MC100H600 MC10H/100H600 10HxEUROPE: r14525 MC10H600/D H600 MC100H600 MC100H600FN MC10H600 MC10H600FN PDF

    Q425

    Abstract: MC100H601 MC100H601FN MC10H601 MC10H601FN
    Text: 10H601, MC100H601 9-Bit ECL to TTL Translator The MC10H/100H601 is a 9–bit, dual supply ECL to TTL translator. Devices in the Motorola 9–bit translator series utilize the 28–lead PLCC for optimal power pinning, signal flow–through and electrical performance.


    Original     		MC10H601, MC100H601 MC10H/100H601 r14525 MC10H601/D Q425 MC100H601 MC100H601FN MC10H601 MC10H601FN PDF