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    20N10L

    Abstract: TP20N IO832
    Text: STP20N10L 10LFI SCS-THOMSON E T / in e N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP 20N 10L S TP20N 10LFI . • . ■ . . . V dss R dsíoü Id 100 V 100 V 0 .1 2 n 0 .1 2 a 20 A 12 A AVALANCHE RUGGEDNESS TECHNOLOGY


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    STP20N10L STP20N10LFI TP20N 10LFI O-220 ISOWATT220 STP20N STP20N1 20N10L IO832 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E STP20N 10L S 10LFI SGS-THOMSON ¡m era « STP20N10L 10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V dss RDS on Id 100 V 100 V < 0.12 a < 0.12 a 20 A 12 A • TYPICAL RDS(on) = 0.09 Q . . AVALANCHE RUGGED TECHNOLOGY


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    STP20N TP20N10LFI STP20N10L STP20N10LFI ISOWATT220 PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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